Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM

Bonchyk, A. Yu.; Dvoretsky, Sergei A.; Fitsych, Olena I.; Izhnin, Igor I.; Korotaev, Alexander G.; Mikhailov, Nikolay N.; Morgiel, Jerzy; Mynbaev, Karim D.; Savytskyy, Hrygory V.; Varavin, Vasilii S.; Voytsekhovskiy, Alexander V.; Yakushev, Maxim V.; Świątek, Zbigniew

Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM

Authors: A. Yu. Bonchyk
Sergei A. Dvoretsky
Olena I. Fitsych
Igor I. Izhnin
Alexander G. Korotaev
Nikolay N. Mikhailov
Jerzy Morgiel
Karim D. Mynbaev
Hrygory V. Savytskyy
Vasilii S. Varavin
Alexander V. Voytsekhovskiy
Maxim V. Yakushev
Zbigniew Świątek
Publication date: 1 January 2021
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Abstract

We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2

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koha:000890957

Last time updated on 07/05/2022