Cathodoluminescence Of Diamondlike Films Deposited By Glow Discharge

The room-temperature cathodoluminescence of diamondlike films produced by glow discharge is reported. The material was deposited onto dc biased substrates maintained at relatively low temperature (<100 °C). Two visible peaks around 2.3 eV (green) and 2.7 eV (blue-violet) were identified which are commonly found in natural and synthetic diamond, indicating the presence of crystalline particles in the films. Moreover, x-ray diffraction spectra of the samples before cathodoluminescence studies are identical to the ones reported for natural powder diamond.6873786378

Infrared Study Of The Si-h Stretching Band In A-sic:h

Amorphous silicon carbide (a-Si1-xCx:H) samples having x ≤ 0.4 were studied by infrared and visible spectroscopy. Treatment by factor analysis of the 2000-2100 cm-1 absorption band of the spectra allows us to interpret this particular vibrational mode in terms of only two independent contributions. The analysis shows that polarization inductive shifting is not significant. An IR study of the evolution of this band during oxidation of porous samples was also performed. All the experimental evidence indicates that the growth of free volumes induced by the presence of carbon plays the most important role in the behavior of the 2000-2100 cm-1 band upon stoichiometric variations.69117805781

Reply To "comment On 'infrared Study Of The Si-h Stretching Band In A-sic:h'" [j. Appl. Phys. 69, 7805 (1991)]

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)We show that the theoretical arguments used in the preceding comment do not apply to our experiments, and that our interpretation of the behavior of the Si-H stretching band in a-SiC:H in terms of structural influences is correct.71840924093BMWFW; Ministry of Business, Innovation and Employment; CAPES; Ministry of Business, Innovation and Employment; CAS; Ministry of Business, Innovation and Employment; CNPq; Ministry of Business, Innovation and Employment; CONACYT; Ministry of Business, Innovation and Employment; DOE; Ministry of Business, Innovation and Employment; DST; Ministry of Business, Innovation and Employment; ESF; Ministry of Business, Innovation and Employment; FAPESP; Ministry of Business, Innovation and Employment; FCT; Ministry of Business, Innovation and Employment; FWF; Ministry of Business, Innovation and Employment; FWO; Ministry of Business, Innovation and Employment; INFN; Ministry of Business, Innovation and Employment; JINR; Ministry of Business, Innovation and Employment; MBIE; Ministry of Business, Innovation and Employment; 20108T4XTM; MIUR; Ministry of Business, Innovation and Employment; MOST; Ministry of Business, Innovation and Employment; NRF; Ministry of Business, Innovation and Employment; NSF; Ministry of Business, Innovation and Employment; NSFC; Ministry of Business, Innovation and Employment; NSTDA; Ministry of Business, Innovation and Employment; RAS; Ministry of Business, Innovation and Employment; RFBR; Ministry of Business, Innovation and Employment; RPF; Ministry of Business, Innovation and Employment; Ministry of Business, Innovation and Employment; BMBF; Ministry of Business, Innovation and Employment; DAE; Ministry of Business, Innovation and Employment; DFG; Ministry of Business, Innovation and Employment; GSRT; Ministry of Business, Innovation and Employment; NIH; Ministry of Business, Innovation and Employment; OTKA; Ministry of Business, Innovation and Employment; SFI; Ministry of Business, Innovation and Employment; STFC; Ministry of Business, Innovation and Employment; UM; Ministry of Business, Innovation and EmploymentFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Direct Evidence Of Porosity In Carbon-rich Hydrogenated Amorphous Silicon Carbide Films

Infrared absorption spectroscopy was used to study the oxidation of hydrogenated amorphous silicon carbide (a-Si:C:H) films prepared by the glow-discharge decomposition of gaseous mixtures of silane and methane. It has been found that carbon-rich samples incorporate oxygen when exposed to air, as detected by an increased absorption of the Si-O-Si stretching vibration band. The analysis of the infrared spectra of samples annealed in air at room temperature and at 200 °C indicates that, except for their oxidation rate, no appreciable difference exists in the mechanisms of oxygen incorporation in the films at the two temperatures. The oxidation kinetics suggests an open porous structure for these carbon-rich films. On the contrary, samples having a low carbon content appear to oxidize on the surface only, in a way similar to amorphous silicon.6694544454

Propiedades estructurales y morfologicas de peliculas delgadas de µc-Si:H

ABSTRACT A series of films boron doped microcrystalline silicon (µc-Si:H (B)) was deposited by plasma-enhanced chemical vapor deposition (PECVD). The samples were Boron doped. The microstructure and morphology of samples were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. Trends of increasing crystalline volume fraction and grain size were observed with increasing boron concentration in the samples. The doped microcrystalline silicon films showed a preferential crystallographic orientation in the plane (220).Una serie de películas delgadas de silicio microcristalino dopadas con Boro (µc-Si:H (B)) fueron depositadas por el método de deposición química en fase de vapor asistida por plasma (PECVD). Las muestras fueron dopas con Boro. La microestructura y morfología de las muestras fue analizada por microscopía de fuerza atómica (AFM), difracción de rayos X y espectroscopía Raman. Se observó un incremento tanto en la fracción de volumen cristalina como en el tamaño de grano a medida que se incrementó la concentración de Boro en las muestras. Las películas de silicio microcristalino dopadas con Boro presentaron una orientación cristalográfica preferencial en el plano (220)

Determination of semiconductors band gap states parameters from photoconductivity measurements: II- Experimental results

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Erratum: "infrared Study Of The Si - H Stretching Band In A-sic:h" (journal Of Applied Physics (1991) 69 (7805))

[No abstract available]71154

Determination of semiconductors band gap states parameters from photoconductivity measurements: II- Experimental results

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