9 research outputs found

    Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films

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    The Cu2O thin film was developed using an electrodeposition approach for resistive memory application. The impact of the deposition voltage (1V, 2V, 3V, and 4V) on resistive switching (RS)/memristive properties of Cu2O thin films was studied. The XRD spectrum reveals that deposited Cu2O has a cubic crystal structure. The bipolar RS in Al/Cu2O/FTO device was clearly observed during the current-voltage (I-V) measurement. The basic memristive properties were calculated from I-V data. The charge transport studies suggested that the SCLC mechanism was responsible for device conduction, and RS was due to filamentary effect. The result suggested that the electrodeposition technique is useful to fabricate a memristive device for various applications

    Bipolar resistive switching and memristive properties of hydrothermally synthesized TiO2 nanorod array: Effect of growth temperature

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    The final publication is available at Elsevier via https://dx.doi.org/10.1016/j.matdes.2018.04.046 Β© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/In the present work, the hydrothermal approach is employed to develop 1D-TiO2 nanorod array memristive devices and the effect of hydrothermal growth temperature on TiO2 memristive devices is studied. X-ray diffraction (XRD) analysis suggested that the rutile phase is dominant in the developed TiO2 nanorod array. Field emission scanning electron microscopy (FESEM) images show well adherent and pinhole free one dimensional (1D) TiO2 nanorods. The presence of titanium and oxygen in all the samples was confirmed by energy dispersive X-ray spectroscopy (EDS). Furthermore, growth of the 1D TiO2 nanorods depends on the growth temperature and uniform growth is observed at the higher growth temperatures. The well-known memristive hysteresis loop is observed in the TiO2 nanorod thin films. Furthermore, resistive switching voltages, the shape of I-V loops and (non)rectifying behavior changed as the growth temperature varied from 140 Β°C to 170 Β°C. The biological synapse properties such as paired-pulse facilitation and short-term depression are observed in some devices. The detailed electrical characterizations suggested that the developed devices show doubled valued charge-magnetic flux characteristic and charge transportation is due to the Ohmic and space charge limited current.Funding from School of Nanoscience and Biotechnology, Shivaji University, Kolhapu

    Resistive Switching Characteristics of Electrochemically Anodized Sub-stoichiometric Ti6O Phase

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    We have developed Ti6O thin film using the electrochemical anodization approach for resistive switching (RS) application. The effect of anodization time (1 h, 2 h and 3 h) on the RS/memristive properties was investigated. The structural analysis was carried out by using the XRD technique, which reveals that the formation of the sub-stoichiometric Ti6O phase. The scanning electron microscopy image reveals that the thin film has compact and porous surface morphology. The electrical results clearly show bipolar RS in Al/Ti6O/Ti device. The boost in the RS properties was achieved by increasing the anodization time. The basic memristive properties were calculated using experimental I-V data. The Schottky, Hopping and Ohmic charge transport mechanisms contribute to the conduction, whereas the filamentary effect controls the RS process of the Al/Ti6O/Ti memristive devices

    Bipolar Resistive Switching Characteristics of Ex-situ Synthesized TiO2-ZnO Nanocomposite

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    In this present article, we have reported a simple and cost-effective ex-situ synthesis of TiO2-ZnO (TZ) nanocomposite thin film by utilizing sol-gel, hydrothermal and solid-state reaction methods. The Ag/TZ/FTO nanocomposite device was developed and demonstrated the bipolar resistive switching (RS) characteristics for resistive memory applications. The result of XRD analysis confirms that the nanocomposite has mixed tetragonal and hexagonal crystal structures of TiO2 and ZnO, respectively. The hysteresis loop is an essential criterion for recognizing memristive devices and similar characteristic was noticed for the developed nanocomposite device. Besides, basic memristive properties were calculated from the I-V data. The charge transportation of Ag/TZ/FTO nanocomposite device takes place because of Ohmic and space charge limited current. The collective effect of oxygen vacancies and Ag ions was a basis of RS effect in the Ag/TZ/FTO nanocomposite device

    Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

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    In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices

    Synthesis and characterization of highly ordered nanosized PbS thin films: modified silar

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    In the current status, we have successfully synthesized lead sulfide (PbS) thin films using a modified successive ionic layer absorption and reaction (SILAR) method. The synthesized film was characterized using UV-Vis-NIR spectrophotometer, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques for optical, structural and morphological properties. Opto-structural study demonstrates that synthesized thin film has a pure crystal structure. The surface morphology study indicates a nanospherical surface morphology without pinhole on the substrate surfaces. Overall study clearly demonstrates that the synthesized PbS thin film by SILAR method have great potential for sensitization of oxide microstructure.clos
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