In this present article, we have reported a simple and cost-effective ex-situ synthesis of TiO2-ZnO (TZ) nanocomposite thin film by utilizing sol-gel, hydrothermal and solid-state reaction methods. The Ag/TZ/FTO nanocomposite device was developed and demonstrated the bipolar resistive switching (RS) characteristics for resistive memory applications. The result of XRD analysis confirms that the nanocomposite has mixed
tetragonal and hexagonal crystal structures of TiO2 and ZnO, respectively. The hysteresis loop is an essential criterion for recognizing memristive devices and similar characteristic was noticed for the developed nanocomposite device. Besides, basic memristive properties were calculated from the I-V data. The charge transportation of Ag/TZ/FTO nanocomposite device takes place because of Ohmic and space charge limited current. The collective effect of oxygen vacancies and Ag ions was a basis of RS effect in the Ag/TZ/FTO nanocomposite device
