Supercollision cooling in undoped graphene

Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed out in Ref. \onlinecite{Song2012PRL}, this is the case in undoped graphene where the small Fermi surface drastically restricts the allowed phonon energy in ordinary collisions. Using electrical heating and sensitive noise thermometry we report on SC-cooling in diffusive monolayer graphene. At low carrier density and high phonon temperature the Joule power $P$ obeys a $P\propto T_e^3$ law as a function of electronic temperature $T_e$. It overrules the linear law expected for ordinary collisions which has recently been observed in resistivity measurements. The cubic law is characteristic of SCs and departs from the $T_e^4$ dependence recently reported for metallic graphene below the Bloch-Gr\"{u}neisen temperature. These supercollisions are important for applications of graphene in bolometry and photo-detection

Electric transport properties of single-walled carbon nanotubes functionalized by plasma ion irradiation method

科研費報告書収録論文(課題番号:13852016/研究代表者:畠山力三/プラズマイオン照射による新機能性進化ナノチューブ創製法の開発

Flux-driven simulations of turbulence collapse

Using three-dimensional nonlinear simulations of tokamak turbulence, we show that an edge transport barrier (ETB) forms naturally once input power exceeds a threshold value. Profiles, turbulence-driven flows, and neoclassical coefficients are evolved self-consistently. A slow power ramp-up simulation shows that ETB transition is triggered by the turbulence-driven flows via an intermediate phase which involves coherent oscillation of turbulence intensity and E × B flow shear. A novel observation of the evolution is that the turbulence collapses and the ETB transition begins when RT > 1 at t = tR (RT: normalized Reynolds power), while the conventional transition criterion (ω E × B > γ l i n where ω E × B denotes mean flow shear) is satisfied only after t = tC ( >tR), when the mean flow shear grows due to positive feedback

Isoscaling in central Sn+Sn collisions at 270 MeV/u

Experimental information on fragment emissions is important in understanding the dynamics of nuclear collisions and in the development of transport model simulating heavy-ion collisions. The composition of complex fragments emitted in the heavy-ion collisions can be explained by statistical models, which assume that thermal equilibrium is achieved at collision energies below 100 MeV/u. Our new experimental data together with theoretical analyses for light particles from Sn+Sn collisions at 270 MeV/u, suggest that the hypothesis of thermal equilibrium breaks down for particles emitted with high transfer momentum. To inspect the system's properties in such limit, the scaling features of the yield ratios of particles from two systems, a neutron-rich system of ${}^{132}\mathrm{Sn}+{}^{124}\mathrm{Sn}$ and a nearly symmetric system of ${}^{108}\mathrm{Sn}+{}^{112}\mathrm{Sn}$, are examined in the framework of the statistical multifragmentation model and the antisymmetrized molecular dynamics model. The isoscaling from low energy particles agree with both models. However the observed breakdown of isoscaling for particles with high transverse momentum cannot be explained by the antisymmetrized molecular dynamics model

Depth Profiling Photoelectron-Spectroscopic Study of an Organic Spin Valve with a Plasma-Modified Pentacene Spacer

[[abstract]]We report an enhanced magnetoresistance (MR) in an organic spin valve with an oxygen plasma-treated pentacene (PC) spacer. The spin valve containing PC without the treatment shows no MR effect, whereas those with moderately plasma-treated PC exhibit MR ratios up to 1.64% at room temperature. X-ray photoelectron spectroscopy with depth profiling is utilized to characterize the interfacial electronic properties of the plasma-treated PC spacer which shows the formation of a derivative oxide layer. The results suggest an alternative approach to improve the interface quality and in turn to enhance the MR performance in organic spin valves.[[incitationindex]]SCI[[booktype]]電子

Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

New synthesis routes to tailor graphene properties by controlling the concentration and chemical configuration of dopants show great promise. Herein we report the direct reproducible synthesis of 2-3% nitrogen-doped ‘few-layer’ graphene from a solid state nitrogen carbide a-C:N source synthesized by femtosecond pulsed laser ablation. Analytical investigations, including synchrotron facilities, made it possible to identify the configuration and chemistry of the nitrogen-doped graphene films. Auger mapping successfully quantified the 2D distribution of the number of graphene layers over the surface, and hence offers a new original way to probe the architecture of graphene sheets. The films mainly consist in a Bernal ABA stacking three-layer architecture, with a layer number distribution ranging from 2 to 6. Nitrogen doping affects the charge carrier distribution but has no significant effects on the number of lattice defects or disorders, compared to undoped graphene synthetized in similar conditions. Pyridinic, quaternary and pyrrolic nitrogen are the dominant chemical configurations, pyridinic N being preponderant at the scale of the film architecture. This work opens highly promising perspectives for the development of self-organized nitrogen-doped graphene materials, as synthetized from solid carbon nitride, with various functionalities, and for the characterization of 2D materials using a significant new methodology