CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

The application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. © 1996 American Institute of Physics.published_or_final_versio

A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

A C-doped GaInP/GaAs HBT using a selective buried sub-cellular has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, f T of 50 GHz and f max of 140 GHz are obtained with this technology.published_or_final_versio

Enhanced structural and magnetic ordering of FePt/Mn-oxide bilayers by ion-beam bombardment and annealing

This journal issue contain selected papers of APDSC'10Poster Session - A. Magnetic Recording Technologies: PA-7Structural and magnetic properties of FePt thin films were affected strongly by capped MnO x layers prepared by ion-beam bombardment and post-annealing. As-deposited FePt/MnO x bilayer exhibited a magnetically soft fcc phase, and it turned to an ordered fct FePt phase with large coercivity (∼8 kOe) after annealing at 550°C. Increasing the %O 2/Ar in capped MnO x layer during deposition resulted in smaller ordered FePt grains separated by grain boundaries of MnO x. We found that the superlattice (001) peak is broadened considerably with larger amount of MnO x incorporated into FePt, likely due to the hindered formation of hard phase. Our results indicate that FePt/MnO x films deposited with lower %O 2/Ar, the oxygen atoms may occupy the interstitial positions in the FePt lattice to induce a local strain thus enhancing the FePt ordering. Further increased %O 2/Ar in capped MnO x layer, the excess oxygen atoms act a diffusion barrier effectively to inhibit the FePt grain growth and ordering. © 2011 IEEE.published_or_final_versionThe Asia-Pacific Data Storage Conference (APDSC'10), Hualien, Taiwan, 27-29 October 2010. In IEEE Transactions On Magnetics, 2011, v. 47 n. 3, p. 501-50

Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors

The temperature effect on current gain is presented for GalnP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 °C and decreases slightly at temperatures above 150 °C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices. © 1999 IEEE Publisher Item Identifier S 0018-9383(99)00257-9.published_or_final_versio

Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3 × 1020 and 2 × 1020 cm-3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.published_or_final_versio

Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector

A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrinsic base and the sub-collector region resulting in substantial reduction of the base-collector capacitance. The experiment shows that the base-collector capacitance is reduced to about half of that of a conventional HBT while the base resistance remains unchanged resulting in a 40-50% increase in the maximum oscillation frequency. Both DC and RF characteristics are investigated and compared with a conventional HBT. A current gain of 40 cutoff frequency of 50 GHz and maximum oscillation frequency of 140 GHz were obtained for the GaInP/GaAs HBT. It is demonstrated that the selective buried sub-collector provides an effective means for enhancing RF performance of an HBT. © 1997 IEEE.published_or_final_versio

The effect of glutamine supplement on small intestinal morphology and xylose absorptive ability of weaned piglets

The purpose of this study is to demonstrate the effects of glutamine (Gln) supplement on small intestinal  morphology, xylose absorptive and growth performance of weaned piglets. Forty eight piglets weaned at 28 ± 2 days of age were randomly allotted to three treatment groups. A basal corn-soybean diet was formulated to contain 20.3% protein and 3450 kcal DE/kg diet. Glutamine was supplemented to the basal diet at 0% (control), 1% (Gln 1%) and 2% (Gln 2%). Pigs were fed experimental diets for three weeks. The results  showed that the villous height of the Gln groups tended higher than the control group in duodenum and jejunum (P < 0.1). Glutamine supplementation increased plasma net xylose absorptive concentration from 0.78 to 1.20 and 0.95 to 1.23 in Gln 1% and Gln 2% group, respectively, which were better than the control group (0.86 to 0.97) in day 7 to 14 after weaning. Growth performance was not significantly affected by Gln supplement;  however, average daily gain was approximately improved from 21 to 28% by Gln supplement compared to the control group during 21 days of experimental period. In summary, the results suggested that dietary  supplementation of Gln could be beneficial in small intestinal villous morphology and xylose absorptive  capacity, and could have a slight contribution to the average daily gain of weaned piglets.Key words: Glutamine, growth performance, intestinal morphology, weaned piglets

Multiregional Satellite Precipitation Products Evaluation over Complex Terrain

An extensive evaluation of nine global-scale high-resolution satellite-based rainfall (SBR) products is performed using a minimum of 6 years (within the period of 2000-13) of reference rainfall data derived from rain gauge networks in nine mountainous regions across the globe. The SBR products are compared to a recently released global reanalysis dataset from the European Centre for Medium-Range Weather Forecasts (ECMWF). The study areas include the eastern Italian Alps, the Swiss Alps, the western Black Sea of Turkey, the French Cévennes, the Peruvian Andes, the Colombian Andes, the Himalayas over Nepal, the Blue Nile in East Africa, Taiwan, and the U.S. Rocky Mountains. Evaluation is performed at annual, monthly, and daily time scales and 0.25° spatial resolution. The SBR datasets are based on the following retrieval algorithms: Tropical Rainfall Measuring Mission Multisatellite Precipitation Analysis (TMPA), the NOAA/Climate Prediction Center morphing technique (CMORPH), Precipitation Estimation from Remotely Sensed Information Using Artificial Neural Networks (PERSIANN), and Global Satellite Mapping of Precipitation (GSMaP). SBR products are categorized into those that include gauge adjustment versus unadjusted. Results show that performance of SBR is highly dependent on the rainfall variability. Many SBR products usually underestimate wet season and overestimate dry season precipitation. The performance of gauge adjustment to the SBR products varies by region and depends greatly on the representativeness of the rain gauge network

Tracing magnetism and pairing in FeTe-based systems

In order to examine the interplay between magnetism and superconductivity, we monitor the non- superconducting chalcogenide FeTe and follow its transitions under insertion of oxygen, doping with Se and vacancies of Fe using spin-polarized band structure methods (LSDA with GGA) starting from the collinear and bicollinear magnetic arrangements. We use a supercell of Fe8Te8 as our starting point so that it can capture local changes in magnetic moments. The calculated values of magnetic moments agree well with available experimental data while oxygen insertions lead to significant changes in the bicollinear or collinear magnetic moments. The total energies of these systems indicate that the collinear-derived structure is the more favorable one prior to a possible superconducting transition. Using a 8-site Betts-cluster-based lattice and the Hubbard model, we show why this structure favors electron or hole pairing and provides clues to a common understanding of charge and spin pairing in the cuprates, pnictides and chalcogenides

Hidden Orbital Order in URu2Si2URu_{2}Si_{2}

When matter is cooled from high temperatures, collective instabilities develop amongst its constituent particles that lead to new kinds of order. An anomaly in the specific heat is a classic signature of this phenomenon. Usually the associated order is easily identified, but sometimes its nature remains elusive. The heavy fermion metal $URu_2Si_2$ is one such example, where the order responsible for the sharp specific heat anomaly at $T_0=17 K$ has remained unidentified despite more than seventeen years of effort. In $URu_{2}Si_{2}$, the coexistence of large electron-electron repulsion and antiferromagnetic fluctuations in $URu_2Si_2$ leads to an almost incompressible heavy electron fluid, where anisotropically paired quasiparticle states are energetically favored. In this paper we use these insights to develop a detailed proposal for the hidden order in $URu_2Si_2$. We show that incommensurate orbital antiferromagnetism, associated with circulating currents between the uranium ions, can account for the local fields and entropy loss observed at the $17 K$ transition; furthermore we make detailed predictions for neutron scattering measurements