Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.Comment: 6 page

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures

Giant topological Hall effect in correlated oxide thin films

Strong electronic correlations can produce remarkable phenomena such as metal–insulator transitions and greatly enhance superconductivity, thermoelectricity or optical nonlinearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca,Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density as a function of magnetic field peaks near the THE maximum. The THE critically depends on carrier concentration and diverges at low doping, near the metal–insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields.The authors thank V. Cros, V. Dobrosavljevic, J. Iñiguez, J.-V. Kim, D. Maccariello, J. Matsuno, I. Mertig, N. Nagaosa and N. Reyren for useful discussions, J.-Y. Chauleau and M. Viret for second harmonic generation experiments, N. Jaouen for resonant magnetic X-ray diffraction, J. Varignon for preparing Fig. 1a and J.-M. George for his help with some magnetotransport measurements. This research received financial support from the ERC Consolidator grant ‘MINT’ (contract no. 615759) and ANR project ‘FERROMON’. This work was also supported by a public grant overseen by the ANR as part of the ‘Investissement d’Avenir’ programme (LABEX NanoSaclay, ref. ANR-10-LABX-0035) through projects ‘FERROMOTT’ and ‘AXION’ and by the Spanish Government through project no. MAT2014-56063-C2-1-R and MAT2017-85232-R (AEI/FEDER, UE), and Severo Ochoa SEV-2015-0496 and the Generalitat de Catalunya (2014SGR 734 project). B.C. acknowledges grant no. FPI BES-2012-059023, R.C. acknowledges support from CNPq-Brazil, and J.S. thanks the University Paris-Saclay (D’Alembert programme) and CNRS for financing his stay at CNRS/Thales. Work at Rutgers was supported by the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, US Department of Energy under award no. DE-SC0018153. H.K. is supported by JSPS KAKENHI grants nos. 25400339, 15H05702 and 17H02929. K.N. is supported by a Grant-in-Aid for JSPS Research Fellow grant no. 16J05516, and by a Program for Leading Graduate Schools ‘Integrative Graduate Education and Research in Green Natural Sciences’.Peer reviewe

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.Comment: Original version. Revised version to appear in Nature Physics

Intrinsic polarization switching mechanisms in BiFeO 3

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Mesures électriques locales par AFM en mode intermittent

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