Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics

Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important directions providing us with a basis for desirable spintronics devices. In construction of such devices, it is also tempting to involve graphene, which has attracted great attention because of its unique and remarkable electronic properties and was recognized as a viable replacement for silicon in electronics. In this case, a challenging goal is to make graphene Dirac states spin-polarized. Here, we report on absolutely new promising pathway to create spin-polarized Dirac states based on coupling of graphene and polar-substrate surface states with giant Rashba-type spin-splitting. We demonstrate how the spin-helical Dirac states are formed in graphene deposited on the surface of BiTeCl. This coupling induces spin separation of the originally spin-degenerate graphene states and results in fully helical in-plane spin polarization of the Dirac electrons.Comment: 5 pages, 3 figure

Rashba split surface states in BiTeBr

Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin-orbit splitting. The Te-terminated surface-state spin splitting has the Rashba-type behavior with the coupling parameter \alpha_R ~ 2 eV\AA.Comment: 8 pages, 7 figure

Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides

We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account many-body effects is crucial to interpret the available experimental data.Comment: 6 pages, 1 figur

Commissioning of Dedicated Furnace for Nb3Sn Coatings of 2.6 GHz Single Cell Cavities

We present the results of commissioning a dedicated furnace for Nb3Sn coatings of 2.6 GHz single cell cavities. Nb3Sn is a desired coating due to its high critical temperature and smaller surface resistance compared to bulk Nb. Usage of Nb3Sn coated cavities will greatly reduce operating costs due to decreased dependance on cryo cooling. Tin is deposited by use of a tin chloride nucleation agent and tin vapor diffusion. Analysis of the resultant coating was performed using SEM/EDS to verify successful formation of Nb3Sn. Witness samples in line of sight of the source were used in order to understand the coating efficacy.Comment: 21st Intl Conf Radio Frequency Superconductivity (SRF 2023

Unoccupied Topological States on Bismuth Chalcogenides

The unoccupied part of the band structure of topological insulators Bi$_2$Te$_{x}$Se$_{3-x}$ ($x=0,2,3$) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are found at the center of the surface Brillouin zone at energies around 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit-interaction induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi$_2$Se$_3$ and Bi$_2$Te$_2$Se. In Bi$_2$Te$_3$ small structural variations can change the character of the local energy gap depending on which an unoccupied Dirac state does or does not exist. Circular dichroism measurements confirm the expected spin texture. From these findings we assign the observed state to an unoccupied topological surface state

Biological diversity of the coastal zone of the Crimean peninsula: problems, preservation and restoration pathways

The results of complex hydrochemical, hydrobiological and ichthyological investigations by IBSS, NAS of Ukraine, realized in 6 regions of the coastal zone of the Crimean peninsula in the Black Sea and the Sea of Azov are given. The main negative factors causing changes in structural and functional characteristics of hydrobiocenoses in the regions studied are analyzed and “hot ecological spots” are isolated. Variants of different methods of management of the coastal ecosystems, including construction of artificial reefs and usage of biological filters for water cleaning, protection and recreation of biological diversity are taken into consideration

Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI

Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index should host spin-locked topological surface states on the surfaces that are not parallel to the crystal plane with Miller indices (v1 v2 v3). On the other hand, mirror symmetry can protect an even number of topological states on the surfaces that are perpendicular to a mirror plane. Various symmetries in a bulk material with a band inversion can independently preordain distinct crystal planes for realization of topological states. Here we demonstrate the first instance of coexistence of both phenomena in the weak 3D TI Bi2TeI which (v1 v2 v3) surface hosts a gapless spin-split surface state protected by the crystal mirror-symmetry. The observed topological state has an even number of crossing points in the directions of the 2D Brillouin zone due to a non-TRIM bulk-band inversion. Our findings shed light on hitherto uncharted features of the electronic structure of weak topological insulators and open up new vistas for applications of these materials in spintronics

Electronic band structure of three-dimensional topological insulators with different stoichiometry composition

We report on a comparative theoretical and experimental investigation of the electronic band structure of a family of three-dimensional topological insulators, AIVBi4Te7−xSex (AIV= Sn, Pb;x = 0, 1). We prove by means of density functional theory calculations and angle-resolved photoemission spectroscopy measurements that partial or total substitution of heavy atoms by lighter isoelectronic ones affects the electronic properties of topological insulators. In particular, we show that the modification of the Dirac cone position relative to the Fermi level and the bulk band gap size can be controlled by varying the stoichiometry of the compound. We also demonstrate that the investigated systems are inert to oxygen exposure.The authors acknowledge financial support from the Saint Petersburg State University (Grant No. 40990069), the Tomsk State University competitiveness improvement program (Grant No. 8.1.01.2018), the Fundamental Research Program of the State Academies of Sciences (line of research III.23.2.9), and the project EUROFEL-ROADMAP ESFRI. This work was also partly supported by the Italian Ministry of Education, Universities and Research (MIUR) through project PON03PE_00092_1 (EOMAT) and by the Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EIF/MQM/Elm-Tehsil-1-2016- 1(26)-71/01/4-M-33). S.V.E. acknowledges support from the Russian Science Foundation (Grant No. 18-12-00169) for part of the electronic band structure calculations.Peer reviewe