Mid-IR type-II InAs/GaSb nanoscale superlattice sensors

The detection of mid-wavelength infrared radiation (MWIR) is very important for many military, industrial and biomedical applications. Present-day commercially available uncooled IR sensors operating in MWIR region (2-5μm) use microbolometric detectors which are inherently slow. Available photon detectors (mercury cadmium telluride (MCT), bulk InSb and quantum well infrared detectors (QWIPs))overcome this limitation. However, there are some fundamental issues decreasing their performance and ability for high temperature operation, including fast Auger recombination rates and high thermal generation rate. These detectors operate at low temperatures (77K-200K) in order to obtain high signal to noise ratio. The requirement of cooling limits the lifetime, increases the weight and the total cost, as well as the power budget, of the whole infrared system. In recent years, InAs/GaSb superlattice based detectors have appeared as an interesting alternative to the present-day IR detector systems. These heterostructures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb layer. The effective bandgap of these structures can be adjusted from 0.4 eV to values below 0.1 eV by varying the thickness of constituent layers leading to an enormous range of detector cutoff wavelengths (3-30μm). The InAs/GaSb SLs have a higher degree of uniformity than the MCT alloys, making them attractive for large area focal plane arrays. They provide a smaller leakage current due to larger effective electron mass, which suppresses tunneling. This material system is also characterized by high operating temperatures and long Auger recombination rates. This suggests the potential for using the SLs technology for realizing high operating temperature devices. This work is focused on the development of mid-IR InAs/GaSb SLs sensors with high-operating temperature. Contributions of this thesis include 1) development of growth and processing procedure for the n-on-p and p-on-n design of SL detectors leading to improved detector performance, 2) careful evaluation of characteristics of SL detectors, 3) methods of reduction of surface component of dark current passivation techniques)

Carrier lifetimes in green emitting InGaN/GaN disks‐in‐nanowire and characteristics of green light emitting diodes

Improvement in the internal quantum efficiency (IQE) of InGaN/GaN disks‐in‐nanowires by surface passivation is demonstrated. The highest IQE achieved through surface passivation for green emitting (λ=540 nm) InGaN/GaN disks‐in‐nanowires is ∼53%. Radiative and nonradiative carrier lifetimes are calculated for as‐grown and surface passivated green emitting disks‐in‐nanowires. Passivated green sample exhibits a room temperature radiative lifetime of ∼748 ps, which is much smaller than that of equivalent quantum wells. Electroluminescence measurements on passivated green light emitting diodes containing InGaN disks demonstrate no roll over or efficiency droop up to 375 A/cm 2 , and exhibit a blue‐shift of 7 nm in peak wavelength. An enhancement in the light output due to surface passivation is observable in the relative external quantum efficiency of the surface passivated devices as compared with the as‐grown samples. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/98222/1/812_ftp.pd

Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors

The impacts of gate bias and device temperature on carrier energy distributions are reported for AlGaN/GaN High Electron Mobility Transistors. The lateral electric field and the average carrier energy are the highest at the end of gate on the gate‐drain access side. The number of high energy carriers is the greatest in the semi‐ON operating condition, with maximum energies exceeding the activation energy of defects in the AlGaN. There is a significant decrease in the number of very high energy carriers (greater than 2 eV) as the device temperature increases whereas the number of moderately energetic carriers (between 1 to 2 eV) is higher at elevated temperatures.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/98280/1/794_ftp.pd

Highly Quantum-Confined InAs Nanoscale Membranes

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors

Space Plasma Interactions with Spacecraft Materials

Spacecraft materials on orbit are subjected to the harsh weather of space. In particular, high-energy electrons alter the chemical structure of polymers and cause charge accumulation. Understanding the mechanisms of damage and charge dissipation is critical to spacecraft construction and operational anomaly resolution. Energetic particles in space plasma break molecular bonds in polymers and create radicals that can act as space charge traps. These electron-induced chemical changes also result in changes to the spectral absorption profile of polymers on orbit. Radicals react over time, either recreating identical bonds to those in the pristine material, leading to material recovery, or creating new bonds, resulting in a new material with new physical properties. Lack of knowledge about this dynamic aging is a major impediment to accurate modeling of spacecraft behavior over its mission life. This chapter first presents an investigation of the chemical and physical properties of polyimide films (PI, Kapton-H®) during and after irradiation with high-energy (90 keV) electrons. Second, the deleterious effects of space plasma on a spacecraft component level are presented. The results of this physical/chemical collaboration demonstrate the correlation of chemical changes in PI with the dynamic nature of spacecraft material aging

Deep Learning for Neuroimaging: a Validation Study

Deep learning methods have recently made notable advances in the tasks of classification and representation learning. These tasks are important for brain imaging and neuroscience discovery, making the methods attractive for porting to a neuroimager’s toolbox. Success of these methods is, in part, explained by the flexibility of deep learning models. However, this flexibility makes the process of porting to new areas a difficult parameter optimization problem. In this work we demonstrate our results (and feasible parameter ranges) in application of deep learning methods to structural and functional brain imaging data. These methods include deep belief networks and their building block the restricted Boltzmann machine. We also describe a novel constraint-based approach to visualizing high dimensional data. We use it to analyze the effect of parameter choices on data transformations. Our results show that deep learning methods are able to learn physiologically important representations and detect latent relations in neuroimaging data

Modular Organization of Functional Network Connectivity in Healthy Controls and Patients with Schizophrenia during the Resting State

Neuroimaging studies have shown that functional brain networks composed from select regions of interest have a modular community structure. However, the organization of functional network connectivity (FNC), comprising a purely data-driven network built from spatially independent brain components, is not yet clear. The aim of this study is to explore the modular organization of FNC in both healthy controls (HCs) and patients with schizophrenia (SZs). Resting state functional magnetic resonance imaging data of HCs and SZs were decomposed into independent components (ICs) by group independent component analysis (ICA). Then weighted brain networks (in which nodes are brain components) were built based on correlations between ICA time courses. Clustering coefficients and connectivity strength of the networks were computed. A dynamic branch cutting algorithm was used to identify modules of the FNC in HCs and SZs. Results show stronger connectivity strength and higher clustering coefficient in HCs with more and smaller modules in SZs. In addition, HCs and SZs had some different hubs. Our findings demonstrate altered modular architecture of the FNC in schizophrenia and provide insights into abnormal topological organization of intrinsic brain networks in this mental illness

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m

Pan‐European phylogeography of the European roe deer (Capreolus capreolus)

To provide the most comprehensive picture of species phylogeny and phylogeography of European roe deer (Capreolus capreolus), we analyzed mtDNA control region (610 bp) of 1469 samples of roe deer from Central and Eastern Europe and included into the analyses additional 1541 mtDNA sequences from GenBank from other regions of the continent. We detected two mtDNA lineages of the species: European and Siberian (an introgression of C. pygargus mtDNA into C. capreolus). The Siberian lineage was most frequent in the eastern part of the continent and declined toward Central Europe. The European lineage contained three clades (Central, Eastern, and Western) composed of several haplogroups, many of which were separated in space. The Western clade appeared to have a discontinuous range from Portugal to Russia. Most of the haplogroups in the Central and the Eastern clades were under expansion during the Weichselian glacial period before the Last Glacial Maximum (LGM), while the expansion time of the Western clade overlapped with the Eemian interglacial. The high genetic diversity of extant roe deer is the result of their survival during the LGM probably in a large, contiguous range spanning from the Iberian Peninsula to the Caucasus Mts and in two northern refugia.202