Sensitivity of an image plate system in the XUV (60 eV < E < 900 eV)

Phosphor imaging plates (IPs) have been calibrated and proven useful for quantitative x-ray imaging in the 1 to over 1000 keV energy range. In this paper we report on calibration measurements made at XUV energies in the 60 to 900 eV energy range using beamline 6.3.2 at the Advanced Light Source at Lawrence Berkeley National Laboratory. We measured a sensitivity of ~25 plus or minus 15 counts/pJ over the stated energy range which is compatible with the sensitivity of Si photodiodes that are used for time-resolved measurements. Our measurements at 900 eV are consistent with the measurements made by Meadowcroft et al. at ~1 keV.Comment: 7 pages, 2 figure

Single-shot soft x-ray laser linewidth measurement using a grating interferometer

Includes bibliographical references (page 5007).The linewidth of a 14.7 nm wavelength Ni-like Pd soft x-ray laser was measured in a single shot using a soft x-ray diffraction grating interferometer. The instrument uses the time delay introduced by the gratings across the beam to measure the temporal coherence. The spectral linewidth of the 4d1S0-4p1P1 Ni-like Pd lasing line was measured to be Δλ/λ=3×10-5 from the Fourier transform of the fringe visibility. This single shot linewidth measurement technique provides a rapid and accurate way to determine the temporal coherence of soft x-ray lasers that can contribute to the development of femtosecond plasma-based soft x-ray lasers

Progress in Short Period Multilayer Coatings for Water Window Applications

Absolute photoionization cross-section measurements for amixture of ground and metastable states of Xe4+, Xe5+, and Xe6+ arereported in the photon energy range of 4d-nf transitions, which occurwithin or adjacent to the 13.5 nm window for extreme ultravioletlithography light source development. The reported values allow thequantification of opacity effects in xenon plasmas due to these 4d-4fautoionizing states. The oscillator strengths for the 4d-4f and 4d-5ftransitions in Xeq+ (q=1-6) ions are calculated using nonrelativisticHartree-Fock and random phase approximations. These are compared withpublished experimental values for Xe+ to Xe3+ and with the valuesobtained from the present experimental cross-section measurements forXe4+ to Xe6+. The calculations assisted in the determination of themetastable content in the ion beams for Xe5+T and Xe6+. The experimentswere performed by merging a synchrotron photon beam generated by anundulator beamline of the Advanced Light Source with an ion beam producedby an electron cyclotron resonance ion source

The influence of working gas pressure on interlayer mixing in magnetron-deposited Mo/Si multilayers

Impact of Ar gas pressure (1−4 mTorr) on the growth of amorphous interlayers in Mo/Si multilayers deposited by magnetron sputtering was investigated by small-angle x-ray scattering (l=0.154 nm) and methods of cross-sectional transmission electron microscopy. Some reduction of thickness of the amorphous inter-layers with Ar pressure increase was found, while composition of the layers was enriched with molybdenum. The interface modification resulted in raise of EUV reflectance of the Mo/Si multilayer

Optical constants of evaporation-deposited silicon monoxide films in the 7.1-800 eV photon energy range

8 págs.; 11 figs.The transmittance of silicon monoxide films prepared by thermal evaporation was measured from 7.1 to 800 eV and used to determine the optical constants of the material. SiO films deposited onto C-coated microgrids in ultrahigh vacuum conditions were measured in situ from 7.1 to 23.1 eV. Grid-supported SiO films deposited in high vacuum conditions were characterized ex situ from 28.5 to 800 eV. At each photon energy, transmittance, and thickness data were used to calculate the extinction coefficient k. The obtained k values combined with data from the literature, and with interpolations and extrapolations in the rest of the electromagnetic spectrum provided a complete set of k values that was used in a Kramers-Kronig analysis to obtain the real part of the index of refraction, n. Two different sum-rule tests were performed that indicated good consistency of the data. © 2009 American Institute of Physics.This work was supported by the National Programme for Space Research, Subdirección General de Proyectos de Investigación, Ministerio de Ciencia y Tecnología, Project Nos. ESP2002-01391 and ESP2005-02650. This work was also performed under the auspices of the U.S. Department of Energy by the University of California Lawrence Berkeley National Laboratory under Contract No. DE-AC03-76F00098 and by the University of California Lawrence Livermore National Laboratory under Contract No. DE-AC52- 07NA27344. M.F.-P. is thankful to Consejo Superior de Investigaciones Científicas Spain for funding under the Programa I3P Contract No. I3P-BPD2004, partially supported by the European Social Fund. M.V.-D. acknowledges financial support from a FPI Contract No. BES-2006-14047 fellowship.Peer Reviewe

EUV reflectance characterization of the 94/304 ? flight secondary AIA mirror at beamline 6.3.2 of the Advanced Light Source

The AIA secondary flight mirror, previously coated at Columbia University with Mg/SiC for the 303.8 {angstrom} channel and Mo/Y for the 93.9 {angstrom} channel was characterized by means of EUV reflectance measurements at beamline 6.3.2 of the Advanced Light Source (ALS) synchrotron at LBNL on January 10, 2006. Paul Boerner (LMSAL) also participated in these measurements

Laboratory Measurements of Fe XXIV L-Shell Line Emission

Recent ASCA spectra exhibit discrepancies with the relative line intensities of various Fe XXIII and XXIV L-shell emission lines predicted by standard plasma emission codes. To address this issue, we have carried out a series of high-resolution, broadband measurements of Fe XXIV line emission using an electron beam ion trap facility. X-ray lines produced in the trap are detected and resolved using Bragg crystal spectrometers. We report measurements of 3 → 2 and 4 → 2 transitions, which result primarily from electron impact excitation. Overall, good agreement is found with distorted wave calculations

Overview and status of the 0.5NA EUV microfield exposure tool at Berkeley Lab

A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 12.0.1.4 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35-0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1-0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1σ on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm

Laboratory Measurements of Fe XXIV L-Shell Line Emission

Recent ASCA spectra exhibit discrepancies with the relative line intensities of various Fe XXIII and XXIV L-shell emission lines predicted by standard plasma emission codes. To address this issue, we have carried out a series of high-resolution, broadband measurements of Fe XXIV line emission using an electron beam ion trap facility. X-ray lines produced in the trap are detected and resolved using Bragg crystal spectrometers. We report measurements of 33 2 and 43 2 transitions, which result primarily from electron impact excitation. Overall, good agreement is found with distorted wave calculations