54 research outputs found

    ИсслСдованиС Π΄Π»ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠΉ элСктричСской прочности изоляционных Ρ€Π΅Π·ΠΈΠ½

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    ДаСтся ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Π°Ρ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡ‚ΡŒ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ Π΄ΠΎ пробоя Ρ€Π΅Π·ΠΈΠ½ Ρ€Π°Π·Π»ΠΈΡ‡Π½ΠΎΠ³ΠΎ состава ΠΎΡ‚ напряТСнности элСктричСского поля

    Study of drinking water activity towards the formation organoferric complexes

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    The article considers one of the methods of the study of drinking water activity towards the formation of organoferric complexes that helps to solve the problem of asiderotic anemia

    On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

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    Cataloged from PDF version of article.A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694054

    ИсслСдованиС ΡƒΠ΄Π΅Π»ΡŒΠ½ΠΎΠΉ элСктропроводности ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΎΠ·Π°ΠΌΠΊΠ½ΡƒΡ‚ΠΎΠΉ ΠΎΠ±ΠΌΠΎΡ‚ΠΊΠΈ Ρ€ΠΎΡ‚ΠΎΡ€Π° асинхронных Π΄Π²ΠΈΠ³Π°Ρ‚Π΅Π»Π΅ΠΉ статистичСским ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ планирования экспСримСнта

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    РассматриваСтся влияниС Ρ‚Π΅ΠΌΠΏΠ΅Ρ€Π°Ρ‚ΡƒΡ€Ρ‹ ΠΈ химсостава алюминия ΠΏΡ€ΠΈ Π·Π°Π»ΠΈΠ²ΠΊΠ΅, Π΄Π»ΠΈΠ½Ρ‹ ΠΏΠ°ΠΊΠ΅Ρ‚ΠΎΠ² ΠΈ суммарного ΠΏΠΎΠΏΠ΅Ρ€Π΅Ρ‡Π½ΠΎΠ³ΠΎ сСчСния ΠΏΠ°Π·ΠΎΠ² Ρ€ΠΎΡ‚ΠΎΡ€ΠΎΠ² Π½Π° ΡƒΠ΄Π΅Π»ΡŒΠ½ΡƒΡŽ ΡΠ»Π΅ΠΊΡ‚Ρ€ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡ‚ΡŒ алюминия ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΎΠ·Π°ΠΌΠΊΠ½ΡƒΡ‚ΠΎΠΉ ΠΎΠ±ΠΌΠΎΡ‚ΠΊΠΈ Ρ€ΠΎΡ‚ΠΎΡ€ΠΎΠ² асинхронных Π΄Π²ΠΈΠ³Π°Ρ‚Π΅Π»Π΅ΠΉ. Π’ качСствС ΠΌΠ΅Ρ‚ΠΎΠ΄Π° исслСдования Π²Ρ‹Π±Ρ€Π°Π½ ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎ-статистичСский. БоставлСн Ρ†Π΅Π½Ρ‚Ρ€Π°Π»ΡŒΠ½Ρ‹ΠΉ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡ†ΠΈΠΎΠ½Π½Ρ‹ΠΉ Ρ€ΠΎΡ‚Π°Ρ‚Π°Π±Π΅Π»ΡŒΠ½Ρ‹ΠΉ ΡƒΠ½ΠΈΡ„ΠΎΡ€ΠΌΠΏΠ»Π°Π½ Π²Ρ‚ΠΎΡ€ΠΎΠ³ΠΎ порядка. Для Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΏΠ»Π°Π½Π° ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½ΠΎ 116 ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Ρ‹Ρ… Ρ€ΠΎΡ‚ΠΎΡ€ΠΎΠ² Π½Π° Π±Π°Π·Π΅ Π΄Π²ΠΈΠ³Π°Ρ‚Π΅Π»Π΅ΠΉ сСрий АО ΠΈ АО2. УдСльная ΡΠ»Π΅ΠΊΡ‚Ρ€ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡ‚ΡŒ ΠΈΠ·ΠΌΠ΅Ρ€ΡΠ»Π°ΡΡŒ ΠΏΡ€ΠΈΠ±ΠΎΡ€ΠΎΠΌ Ρ‚ΠΈΠΏΠ° ИЭ-1 Π½Π° вСнтиляционных ΠΊΡ€Ρ‹Π»ΡŒΡΡ…, ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΎΠ·Π°ΠΌΡ‹ΠΊΠ°ΡŽΡ‰ΠΈΡ… ΠΊΠΎΠ»ΡŒΡ†Π°Ρ… ΠΈ Π½Π° ΠΈΠ·Π²Π»Π΅Ρ‡Π΅Π½Π½Ρ‹Ρ… ΠΈΠ· Ρ€ΠΎΡ‚ΠΎΡ€ΠΎΠ² стСрТнях ΠΎΠ±ΠΌΠΎΡ‚ΠΊΠΈ. ВсСго ΠΏΡ€ΠΎΠΈΠ·Π²Π΅Π΄Π΅Π½ΠΎ 4292 Π·Π°ΠΌΠ΅Ρ€Π°. Π’ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π΅ статистичСской ΠΎΠ±Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Ρ‹Ρ… Π΄Π°Π½Π½Ρ‹Ρ… ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Ρ‹ уравнСния рСгрСссии Π² Π²ΠΈΠ΄Π΅ ΠΏΠΎΠ»ΠΈΠ½ΠΎΠΌΠΎΠ² Π²Ρ‚ΠΎΡ€ΠΎΠ³ΠΎ порядка ΠΎΡ‚Π΄Π΅Π»ΡŒΠ½ΠΎ для ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΎΠ·Π°ΠΌΡ‹ΠΊΠ°ΡŽΡ‰ΠΈΡ… ΠΊΠΎΠ»Π΅Ρ† ΠΈ стСрТнСй ΠΎΠ±ΠΌΠΎΡ‚ΠΊΠΈ. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½Π° ΠΏΡ€ΠΎΠ²Π΅Ρ€ΠΊΠ° ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠΉ Π½Π° Π°Π΄Π΅ΠΊΠ²Π°Ρ‚Π½ΠΎΡΡ‚ΡŒ ΠΏΠΎ F-ΠΊΡ€ΠΈΡ‚Π΅Ρ€ΠΈΡŽ Π€ΠΈΡˆΠ΅Ρ€Π° ΠΈ коэффициСнтов ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠΉ Π½Π° Π·Π½Π°Ρ‡ΠΈΠΌΠΎΡΡ‚ΡŒ ΠΏΠΎ ΠΊΡ€ΠΈΡ‚Π΅Ρ€ΠΈΡŽ Π‘Ρ‚ΡŠΡŽΠ΄Π΅Π½Ρ‚Π°. УравнСния рСгрСссии ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‚ ΡƒΡ‡Π΅ΡΡ‚ΡŒ тСхнологичСскиС ΠΈ конструктивно-тСхнологичСскиС Ρ„Π°ΠΊΡ‚ΠΎΡ€Ρ‹ ΠΏΡ€ΠΈ ΠΏΡ€ΠΎΠ΅ΠΊΡ‚ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠΈ асинхронных Π΄Π²ΠΈΠ³Π°Ρ‚Π΅Π»Π΅ΠΉ, Π°Π½Π°Π»ΠΎΠ³ΠΈΡ‡Π½Ρ‹Ρ… исслСдованным, ΠΈ ΠΏΠΎΠ²Ρ‹ΡΠΈΡ‚ΡŒ Ρ‚ΠΎΡ‡Π½ΠΎΡΡ‚ΡŒ расчСта ΠΈΡ… характСристик

    Investigation of AlGaN buffer layers on sapphire grown by MOVPE

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    In this work, AlGaN layers were grown on sapphire by metal-organic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, with the intention to investigate the effect of varying Al/MO and V/III ratios on the Al incorporation into the AlGaN layers. The parameters Al/MO and V/III describe the proportions of source material inside the reactor. With the help of optical transmission measurements, characteristic cut-off wavelengths of the Al xGa(1-x)N layers were determined. These wavelengths were used to calculate the Al content x of the layers, leading to values between 26.6% and 52.1%. Using the two process parameters Al/MO and V/III as input and the Al content of the AlGaN layers as a response variable, the experimental results were further investigated with the help of the software STATGRAPHICS. An estimated response surface for the variable x was generated. It was found that the Al incorporation is only tunable within a wide range for high V/III ratios of about 900. For constant Al/MO ratios and varying V/III ratios, two different growth characteristics were observed at high and low Al/MO values. This behavior is ascribed to the superposition of two oppositional effects

    Comment on "Periodic Phase Synchronization in Coupled Chaotic Oscillators"

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    2 pages.-- PACS numbers: 05.45.Xt, 05.45.Pq.-- Final full-text version of the paper available at: http://dx.doi.org/10.1103/PhysRevE.73.038201.Kye et al. [Phys. Rev. E 68, 025201(R) (2003)] have recently claimed that, before the onset of Chaotic Phase Synchronization in coupled phase coherent oscillators, there exists a temporally coherent state called Periodic Phase Synchronization (PPS). Here we give evidence that some of their numerical calculations are flawed, while we provide theoretical arguments that indicate that PPS is not to be expected generically in this type of systems.This work was supported by MEC (Spain) and FEDER under Grant Nos. BFM2001-0341-C02-02, FIS2004-00953 (CONOCE2), and FIS2004-05073-C04-03.http://dx.doi.org/10.1103/PhysRevE.73.03820

    Π‘ΠΎΠ²Π΅Ρ€ΡˆΠ΅Π½ΡΡ‚Π²ΠΎΠ²Π°Π½ΠΈΠ΅ Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ сооруТСния ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½Ρ‹Ρ… ΠΏΠ΅Ρ€Π΅Ρ…ΠΎΠ΄ΠΎΠ² Ρ‚Ρ€ΡƒΠ±ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΏΡ€ΠΎΠ»ΠΎΠΆΠ΅Π½Π½Ρ‹Ρ… ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ Π³ΠΎΡ€ΠΈΠ·ΠΎΠ½Ρ‚Π°Π»ΡŒΠ½ΠΎ-Π½Π°ΠΏΡ€Π°Π²Π»Π΅Π½Π½ΠΎΠ³ΠΎ бурСния

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    ЦСль Ρ€Π°Π±ΠΎΡ‚Ρ‹ – Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠ° Ρ€Π΅ΠΊΠΎΠΌΠ΅Π½Π΄Π°Ρ†ΠΈΠΉ ΠΏΠΎ ΠΏΡ€ΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡŽ Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΠΏΡ€ΠΎΠΊΠ»Π°Π΄ΠΊΠΈ Ρ‚Ρ€ΡƒΠ±ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ Π³ΠΎΡ€ΠΈΠ·ΠΎΠ½Ρ‚Π°Π»ΡŒΠ½ΠΎ-Π½Π°ΠΏΡ€Π°Π²Π»Π΅Π½Π½ΠΎΠ³ΠΎ бурСния с ΠΏΡ€ΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ΠΌ Π·Π°Ρ‰ΠΈΡ‚Π½ΠΎΠ³ΠΎ устройства. Π’ процСссС исслСдования ΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈΡΡŒ ΡΡ€Π°Π²Π½ΠΈΡ‚Π΅Π»ΡŒΠ½Π°Ρ характСристика ΡΡƒΡ‰Π΅ΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² Π±Π΅ΡΡ‚Ρ€Π°Π½ΡˆΠ΅ΠΉΠ½ΠΎΠΉ ΠΏΡ€ΠΎΠΊΠ»Π°Π΄ΠΊΠΈ Ρ‚Ρ€ΡƒΠ±ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΎΠ², расчСт основных характСристик ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ΅Ρ€Π΅Ρ…ΠΎΠ΄Π°, ΠΏΠΎΠ΄Π±ΠΎΡ€ Π·Π°Ρ‰ΠΈΡ‚Π½ΠΎΠ³ΠΎ устройства, исслСдованиС напряТСнно-Π΄Π΅Ρ„ΠΎΡ€ΠΌΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ состояния Ρ‚Ρ€ΡƒΠ±ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄Π° с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ ΠΊΠΎΠ½Π΅Ρ‡Π½ΠΎ-элСмСнтного модСлирования Π² ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ½ΠΎΠΌ комплСксС Ansys. Π’ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π΅ исслСдования ΠΏΠΎΠ΄ΠΎΠ±Ρ€Π°Π½Ρ‹ ΠΎΠΏΡ‚ΠΈΠΌΠ°Π»ΡŒΠ½Ρ‹Π΅ ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Ρ‹ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ΅Ρ€Π΅Ρ…ΠΎΠ΄Π°, ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ ΠΊΠΎΠ½Π΅Ρ‡Π½ΠΎ-элСмСнтного модСлирования Π² ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ½ΠΎΠΌ комплСксС Ansys ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½ΠΎ напряТСнно-Π΄Π΅Ρ„ΠΎΡ€ΠΌΠΈΡ€ΠΎΠ²Π°Π½Π½ΠΎΠ½ состояниС Ρ‚Ρ€ΡƒΠ±ΠΎΠΏΡ€ΠΎΠ²ΠΎΠ΄Π° с Π·Π°Ρ‰ΠΈΡ‚Π½Ρ‹ΠΌ устройством ΠΈ Π±Π΅Π· Π½Π΅Π³ΠΎ.The purpose of the work is to develop recommendations for the application of pipeline laying technology by the method of horizontal directional drilling using a protective device. In the process of the research, the existing methods of trenchless pipeline laying, the calculation of the main characteristics of the underwater crossing, the selection of the protective device, the study of the stress-strain state of the pipeline using finite element modeling in the software complex Ansys were compared. As a result of the research, optimal parameters of the underwater transition were selected, the finite element method in the software complex Ansys determined the stress-strain state of the pipeline with the protective device and without it
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