54 research outputs found
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π΄Π»ΠΈΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΏΡΠΎΡΠ½ΠΎΡΡΠΈ ΠΈΠ·ΠΎΠ»ΡΡΠΈΠΎΠ½Π½ΡΡ ΡΠ΅Π·ΠΈΠ½
ΠΠ°Π΅ΡΡΡ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½Π°Ρ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΡ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Π΄ΠΎ ΠΏΡΠΎΠ±ΠΎΡ ΡΠ΅Π·ΠΈΠ½ ΡΠ°Π·Π»ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΠΎΡΡΠ°Π²Π° ΠΎΡ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎΡΡΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΠ»Ρ
Study of drinking water activity towards the formation organoferric complexes
The article considers one of the methods of the study of drinking water activity towards the formation of organoferric complexes that helps to solve the problem of asiderotic anemia
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
Cataloged from PDF version of article.A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694054
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΄Π΅Π»ΡΠ½ΠΎΠΉ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΠΈ ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΠΊΠ½ΡΡΠΎΠΉ ΠΎΠ±ΠΌΠΎΡΠΊΠΈ ΡΠΎΡΠΎΡΠ° Π°ΡΠΈΠ½Ρ ΡΠΎΠ½Π½ΡΡ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΏΠ»Π°Π½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°
Π Π°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΡΡΡ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ ΠΈ Ρ
ΠΈΠΌΡΠΎΡΡΠ°Π²Π° Π°Π»ΡΠΌΠΈΠ½ΠΈΡ ΠΏΡΠΈ Π·Π°Π»ΠΈΠ²ΠΊΠ΅, Π΄Π»ΠΈΠ½Ρ ΠΏΠ°ΠΊΠ΅ΡΠΎΠ² ΠΈ ΡΡΠΌΠΌΠ°ΡΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠΏΠ΅ΡΠ΅ΡΠ½ΠΎΠ³ΠΎ ΡΠ΅ΡΠ΅Π½ΠΈΡ ΠΏΠ°Π·ΠΎΠ² ΡΠΎΡΠΎΡΠΎΠ² Π½Π° ΡΠ΄Π΅Π»ΡΠ½ΡΡ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΡ Π°Π»ΡΠΌΠΈΠ½ΠΈΡ ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΠΊΠ½ΡΡΠΎΠΉ ΠΎΠ±ΠΌΠΎΡΠΊΠΈ ΡΠΎΡΠΎΡΠΎΠ² Π°ΡΠΈΠ½Ρ
ΡΠΎΠ½Π½ΡΡ
Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ. Π ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΌΠ΅ΡΠΎΠ΄Π° ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π²ΡΠ±ΡΠ°Π½ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎ-ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΈΠΉ. Π‘ΠΎΡΡΠ°Π²Π»Π΅Π½ ΡΠ΅Π½ΡΡΠ°Π»ΡΠ½ΡΠΉ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΎΠ½Π½ΡΠΉ ΡΠΎΡΠ°ΡΠ°Π±Π΅Π»ΡΠ½ΡΠΉ ΡΠ½ΠΈΡΠΎΡΠΌΠΏΠ»Π°Π½ Π²ΡΠΎΡΠΎΠ³ΠΎ ΠΏΠΎΡΡΠ΄ΠΊΠ°. ΠΠ»Ρ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠ»Π°Π½Π° ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΎ 116 ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
ΡΠΎΡΠΎΡΠΎΠ² Π½Π° Π±Π°Π·Π΅ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ ΡΠ΅ΡΠΈΠΉ ΠΠ ΠΈ ΠΠ2. Π£Π΄Π΅Π»ΡΠ½Π°Ρ ΡΠ»Π΅ΠΊΡΡΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΎΡΡΡ ΠΈΠ·ΠΌΠ΅ΡΡΠ»Π°ΡΡ ΠΏΡΠΈΠ±ΠΎΡΠΎΠΌ ΡΠΈΠΏΠ° ΠΠ-1 Π½Π° Π²Π΅Π½ΡΠΈΠ»ΡΡΠΈΠΎΠ½Π½ΡΡ
ΠΊΡΡΠ»ΡΡΡ
, ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΡΠΊΠ°ΡΡΠΈΡ
ΠΊΠΎΠ»ΡΡΠ°Ρ
ΠΈ Π½Π° ΠΈΠ·Π²Π»Π΅ΡΠ΅Π½Π½ΡΡ
ΠΈΠ· ΡΠΎΡΠΎΡΠΎΠ² ΡΡΠ΅ΡΠΆΠ½ΡΡ
ΠΎΠ±ΠΌΠΎΡΠΊΠΈ. ΠΡΠ΅Π³ΠΎ ΠΏΡΠΎΠΈΠ·Π²Π΅Π΄Π΅Π½ΠΎ 4292 Π·Π°ΠΌΠ΅ΡΠ°. Π ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ΅ ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΡ
Π΄Π°Π½Π½ΡΡ
ΠΏΠΎΠ»ΡΡΠ΅Π½Ρ ΡΡΠ°Π²Π½Π΅Π½ΠΈΡ ΡΠ΅Π³ΡΠ΅ΡΡΠΈΠΈ Π² Π²ΠΈΠ΄Π΅ ΠΏΠΎΠ»ΠΈΠ½ΠΎΠΌΠΎΠ² Π²ΡΠΎΡΠΎΠ³ΠΎ ΠΏΠΎΡΡΠ΄ΠΊΠ° ΠΎΡΠ΄Π΅Π»ΡΠ½ΠΎ Π΄Π»Ρ ΠΊΠΎΡΠΎΡΠΊΠΎΠ·Π°ΠΌΡΠΊΠ°ΡΡΠΈΡ
ΠΊΠΎΠ»Π΅Ρ ΠΈ ΡΡΠ΅ΡΠΆΠ½Π΅ΠΉ ΠΎΠ±ΠΌΠΎΡΠΊΠΈ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½Π° ΠΏΡΠΎΠ²Π΅ΡΠΊΠ° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ Π½Π° Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎΡΡΡ ΠΏΠΎ F-ΠΊΡΠΈΡΠ΅ΡΠΈΡ Π€ΠΈΡΠ΅ΡΠ° ΠΈ ΠΊΠΎΡΡΡΠΈΡΠΈΠ΅Π½ΡΠΎΠ² ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΉ Π½Π° Π·Π½Π°ΡΠΈΠΌΠΎΡΡΡ ΠΏΠΎ ΠΊΡΠΈΡΠ΅ΡΠΈΡ Π‘ΡΡΡΠ΄Π΅Π½ΡΠ°. Π£ΡΠ°Π²Π½Π΅Π½ΠΈΡ ΡΠ΅Π³ΡΠ΅ΡΡΠΈΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ ΡΡΠ΅ΡΡΡ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΈ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠ²Π½ΠΎ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ°ΠΊΡΠΎΡΡ ΠΏΡΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠΈ Π°ΡΠΈΠ½Ρ
ΡΠΎΠ½Π½ΡΡ
Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ, Π°Π½Π°Π»ΠΎΠ³ΠΈΡΠ½ΡΡ
ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Π½ΡΠΌ, ΠΈ ΠΏΠΎΠ²ΡΡΠΈΡΡ ΡΠΎΡΠ½ΠΎΡΡΡ ΡΠ°ΡΡΠ΅ΡΠ° ΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ
Investigation of AlGaN buffer layers on sapphire grown by MOVPE
In this work, AlGaN layers were grown on sapphire by metal-organic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, with the intention to investigate the effect of varying Al/MO and V/III ratios on the Al incorporation into the AlGaN layers. The parameters Al/MO and V/III describe the proportions of source material inside the reactor. With the help of optical transmission measurements, characteristic cut-off wavelengths of the Al xGa(1-x)N layers were determined. These wavelengths were used to calculate the Al content x of the layers, leading to values between 26.6% and 52.1%. Using the two process parameters Al/MO and V/III as input and the Al content of the AlGaN layers as a response variable, the experimental results were further investigated with the help of the software STATGRAPHICS. An estimated response surface for the variable x was generated. It was found that the Al incorporation is only tunable within a wide range for high V/III ratios of about 900. For constant Al/MO ratios and varying V/III ratios, two different growth characteristics were observed at high and low Al/MO values. This behavior is ascribed to the superposition of two oppositional effects
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
[No abstract available
Comment on "Periodic Phase Synchronization in Coupled Chaotic Oscillators"
2 pages.-- PACS numbers: 05.45.Xt, 05.45.Pq.-- Final full-text version of the paper available at: http://dx.doi.org/10.1103/PhysRevE.73.038201.Kye et al. [Phys. Rev. E 68, 025201(R) (2003)] have recently claimed that, before the onset of Chaotic Phase Synchronization in coupled phase coherent oscillators, there exists a temporally coherent state called Periodic Phase Synchronization (PPS). Here we give evidence that some of their numerical calculations are flawed, while we provide theoretical arguments that indicate that PPS is not to be expected generically in this type of systems.This work was supported by MEC (Spain) and FEDER
under Grant Nos. BFM2001-0341-C02-02, FIS2004-00953 (CONOCE2), and FIS2004-05073-C04-03.http://dx.doi.org/10.1103/PhysRevE.73.03820
Π‘ΠΎΠ²Π΅ΡΡΠ΅Π½ΡΡΠ²ΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ΅Ρ Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΡΠΎΠΎΡΡΠΆΠ΅Π½ΠΈΡ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΡΡ ΠΏΠ΅ΡΠ΅Ρ ΠΎΠ΄ΠΎΠ² ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΏΡΠΎΠ»ΠΎΠΆΠ΅Π½Π½ΡΡ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π³ΠΎΡΠΈΠ·ΠΎΠ½ΡΠ°Π»ΡΠ½ΠΎ-Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½Π½ΠΎΠ³ΠΎ Π±ΡΡΠ΅Π½ΠΈΡ
Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ β ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΡΠ΅ΠΊΠΎΠΌΠ΅Π½Π΄Π°ΡΠΈΠΉ ΠΏΠΎ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ ΠΏΡΠΎΠΊΠ»Π°Π΄ΠΊΠΈ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΠΎΠ² ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π³ΠΎΡΠΈΠ·ΠΎΠ½ΡΠ°Π»ΡΠ½ΠΎ-Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½Π½ΠΎΠ³ΠΎ Π±ΡΡΠ΅Π½ΠΈΡ Ρ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ΠΌ Π·Π°ΡΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΡΡΠΎΠΉΡΡΠ²Π°.
Π ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈΡΡ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½Π°Ρ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ° ΡΡΡΠ΅ΡΡΠ²ΡΡΡΠΈΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² Π±Π΅ΡΡΡΠ°Π½ΡΠ΅ΠΉΠ½ΠΎΠΉ ΠΏΡΠΎΠΊΠ»Π°Π΄ΠΊΠΈ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄ΠΎΠ², ΡΠ°ΡΡΠ΅Ρ ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°, ΠΏΠΎΠ΄Π±ΠΎΡ Π·Π°ΡΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΡΡΠΎΠΉΡΡΠ²Π°, ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎ-Π΄Π΅ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ ΡΠΎΡΡΠΎΡΠ½ΠΈΡ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΊΠΎΠ½Π΅ΡΠ½ΠΎ-ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ½ΠΎΠΌ ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ΅ Ansys.
Π ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΠΎΠ΄ΠΎΠ±ΡΠ°Π½Ρ ΠΎΠΏΡΠΈΠΌΠ°Π»ΡΠ½ΡΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°, ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΊΠΎΠ½Π΅ΡΠ½ΠΎ-ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π² ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ½ΠΎΠΌ ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ΅ Ansys ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΎ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎ-Π΄Π΅ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ½ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° Ρ Π·Π°ΡΠΈΡΠ½ΡΠΌ ΡΡΡΡΠΎΠΉΡΡΠ²ΠΎΠΌ ΠΈ Π±Π΅Π· Π½Π΅Π³ΠΎ.The purpose of the work is to develop recommendations for the application of pipeline laying technology by the method of horizontal directional drilling using a protective device.
In the process of the research, the existing methods of trenchless pipeline laying, the calculation of the main characteristics of the underwater crossing, the selection of the protective device, the study of the stress-strain state of the pipeline using finite element modeling in the software complex Ansys were compared. As a result of the research, optimal parameters of the underwater transition were selected, the finite element method in the software complex Ansys determined the stress-strain state of the pipeline with the protective device and without it
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