262 research outputs found
Tests of monolithic active pixel sensors at national synchrotron light source
The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17X17µm^2 and was designed in a 0,6µm CMOS process. The X-ray beam energies used range from 5 to 12 keV. Examples of direct X-ray imaging capabilities are presented
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SOI detector with drift field due to majority carrier flow - an alternative to biasing in depletion
This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm{sup 2} large detector array with 20 {micro}m and 40 {micro}m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well
High resolution pixel detectors for e+e- linear colliders
The physics goals at the future e+e- linear collider require high performance
vertexing and impact parameter resolution. Two possible technologies for the
vertex detector of an experimental apparatus are outlined in the paper: an
evolution of the Hybrid Pixel Sensors already used in high energy physics
experiments and a new detector concept based on the monolithic CMOS sensors.Comment: 8 pages, to appear on the Proceedings of the International Workshop
on Linear Colliders LCWS99, Sitges (Spain), April 28 - May 5, 199
A fast monolithic active pixel sensor with pixel level reset noise suppression and binary outputs for charged particle detection
In order to develop precision vertex detectors for the future linear collider, fast active monolithic active pixel sensors are studied. Standard CMOS 0.25 mum digital process is used to design a test chip which includes different pixel types, column-level discriminators and a digital control part. In-pixel amplification is implemented together with double sampling. Different charge-to-voltage conversion factors were obtained using amplifiers with different gains or diode sizes. Pixel architectures with DC and AC coupling to charge sensing element were proposed. As far, hits from conversion of 35Fe photons were registered for the DC-coupled pixel. Double sampling is functional and allows almost a complete cancellation if fixed pattern noise
Optimization of Tracking Performance of CMOS Monolithic Active Pixel Sensors
CMOS Monolithic Active Pixel Sensors (MAPS) provide an attractive solution for high precision tracking of minimum ionizing particles. In these devices, a thin, moderately doped, undepleted silicon layer is used as the active detector volume with the readout electronics implemented on top of it. Recently, a new MAPS prototype was fabricated using the AMS 0.35 m OPTO process, featuring a thick epitaxial layer. A systematic study of tracking performance of that prototype using high-energy particle beam is presented in this work. Noise performance, signal amplitude from minimum ionizing particles, detection efficiency, spurious hit suppression and spatial resolution are shown as a function of the readout pitch and the charge collecting diode size. A test array with a novel readout circuitry was also fabricated and tested. Each pixel circuit consists of a front-end voltage amplifier, capacitively coupled to the charge collecting diode, followed by two analog memory cells. This architecture implements an on-pixel correlated double sampling method, allowing for optimization of integration independently of full frame readout time and strongly reduces the pixel-to-pixel output signal dispersion. First measurements using this structure are also presented
Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for
various vertex detectors in nuclear and particle physics. We discuss the
mechanisms of ionizing radiation damage on MAPS hosting the the dead time free,
so-called self bias pixel. Moreover, we discuss radiation hardened sensor
designs which allow operating detectors after exposing them to irradiation
doses above 1 Mra
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