64 research outputs found

    Dielectric constant boost in amorphous sesquioxides

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    High-kappa dielectrics for insulating layers are a current key ingredient of microelectronics. X2O3 sesquioxide compounds are among the candidates. Here we show for a typical material of this class, ScO3, that the relatively modest dielectric constant of its crystalline phase is enhanced in the amorphous phase by over 40% (from ~15 to ~22). This is due to the disorder-induced activation of low frequency cation-related modes which are inactive or inefficient in the crystal, and by the conservation of effective dynamical charges (a measure of atomic polarizability). The analysis employs density-functional energy-force and perturbation-theory calculations of the dielectric response of amorphous samples generated by pair-potential molecular dynamics.Comment: 3 pages, 3 figures, submitted to AP

    Conservation of dielectric constant upon amorphization in perovskite oxides

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    We report calculations indicating that amorphous RAO3_3 oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric response was studied via density-functional perturbation theory. Amorphous samples were generated by molecular dynamics melt-and-quench simulations.Comment: 5 pages, 3 figure

    Giant Oscillating Thermopower at Oxide Interfaces

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    Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the strongly depleted charge density regime, thermopower displays record-high negative values of the order of 10^4 - 10^5 microV/K, oscillating at regular intervals as a function of the gate voltage. The huge thermopower magnitude can be attributed to the phonon-drag contribution, while the oscillations map the progressive depletion and the Fermi level descent across a dense array of localized states lying at the bottom of the Ti 3d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO3/SrTiO3 interface.Comment: Main text: 28 pages and 3 figures; Supplementary information: 29 pages, 5 figures and 1 tabl

    Exchange interactions and magnetic phases of transition metal oxides: benchmarking advanced ab initio methods

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    The magnetic properties of the transition metal monoxides MnO and NiO are investigated at equilibrium and under pressure via several advanced first-principles methods coupled with Heisenberg Hamiltonian MonteCarlo. The comparative first-principles analysis involves two promising beyond-local density functionals approaches, namely the hybrid density functional theory and the recently developed variational pseudo-self-interaction correction method, implemented with both plane-wave and atomic-orbital basis sets. The advanced functionals deliver a very satisfying rendition, curing the main drawbacks of the local functionals and improving over many other previous theoretical predictions. Furthermore, and most importantly, they convincingly demonstrate a degree of internal consistency, despite differences emerging due to methodological details (e.g. plane waves vs. atomic orbitals

    A variational pseudo-self-interaction correction approach: ab-initio description of correlated oxides and molecules

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    We present a fully variational generalization of the pseudo self-interaction correction (VPSIC) approach previously presented in two implementations based on plane-waves and atomic orbital basis set, known as PSIC and ASIC, respectively. The new method is essentially equivalent to the previous version for what concern the electronic properties, but it can be exploited to calculate total-energy derived properties as well, such as forces and structural optimization. We apply the method to a variety of test cases including both non-magnetic and magnetic correlated oxides and molecules, showing a generally good accuracy in the description of both structural and electronic properties.Comment: 23 pages, 9 tables, 16 figure

    Quantum ESPRESSO toward the exascale

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    Quantum ESPRESSO is an open-source distribution of computer codes for quantum-mechanical materials modeling, based on density-functional theory, pseudopotentials, and plane waves, and renowned for its performance on a wide range of hardware architectures, from laptops to massively parallel computers, as well as for the breadth of its applications. In this paper, we present a motivation and brief review of the ongoing effort to port Quantum ESPRESSO onto heterogeneous architectures based on hardware accelerators, which will overcome the energy constraints that are currently hindering the way toward exascale computing

    Roadmap on Electronic Structure Codes in the Exascale Era

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    Electronic structure calculations have been instrumental in providing many important insights into a range of physical and chemical properties of various molecular and solid-state systems. Their importance to various fields, including materials science, chemical sciences, computational chemistry and device physics, is underscored by the large fraction of available public supercomputing resources devoted to these calculations. As we enter the exascale era, exciting new opportunities to increase simulation numbers, sizes, and accuracies present themselves. In order to realize these promises, the community of electronic structure software developers will however first have to tackle a number of challenges pertaining to the efficient use of new architectures that will rely heavily on massive parallelism and hardware accelerators. This roadmap provides a broad overview of the state-of-the-art in electronic structure calculations and of the various new directions being pursued by the community. It covers 14 electronic structure codes, presenting their current status, their development priorities over the next five years, and their plans towards tackling the challenges and leveraging the opportunities presented by the advent of exascale computing

    Roadmap on Electronic Structure Codes in the Exascale Era

    Get PDF
    Electronic structure calculations have been instrumental in providing many important insights into a range of physical and chemical properties of various molecular and solid-state systems. Their importance to various fields, including materials science, chemical sciences, computational chemistry and device physics, is underscored by the large fraction of available public supercomputing resources devoted to these calculations. As we enter the exascale era, exciting new opportunities to increase simulation numbers, sizes, and accuracies present themselves. In order to realize these promises, the community of electronic structure software developers will however first have to tackle a number of challenges pertaining to the efficient use of new architectures that will rely heavily on massive parallelism and hardware accelerators. This roadmap provides a broad overview of the state-of-the-art in electronic structure calculations and of the various new directions being pursued by the community. It covers 14 electronic structure codes, presenting their current status, their development priorities over the next five years, and their plans towards tackling the challenges and leveraging the opportunities presented by the advent of exascale computing

    A Universal Critical Density Underlying the Physics of Electrons at the LaAlO3/SrTiO3 Interface

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    The two-dimensional electron system formed at the interface between the insulating oxides LaAlO3 and SrTiO3 exhibits ferromagnetism, superconductivity, and a wide range of unique magnetotransport properties. A key challenge is to find a unified microscopic mechanism that underlies these emergent phenomena. Here we show that a universal Lifshitz transition between d-orbitals lies at the core of the observed transport phenomena in this system. Our measurements find a critical electronic density at which the transport switches from single to multiple carriers. This density has a universal value, independent of the LaAlO3 thickness and electron mobility. The characteristics of the transition, its universality, and its compatibility with spectroscopic measurements establish it as a transition between d-orbitals of different symmetries. A simple band model, allowing for spin-orbit coupling at the atomic level, connects the observed universal transition to a range of reported magnetotransport properties. Interestingly, we also find that the maximum of the superconducting transition temperature occurs at the same critical transition, indicating a possible connection between the two phenomena. Our observations demonstrate that orbital degeneracies play an important role in the fascinating behavior observed so far in these oxides
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