Transverse magnetic mode nonreciprocal propagation in an amplifying AlGaInAs/InP optical waveguide isolator.

International audienceThe design, fabrication, and characterization of an amplifying transverse magnetic ͑TM͒-mode optical waveguide isolator operating at a wavelength of 1300 nm are presented. The magneto-optical Kerr effect induces nonreciprocal modal absorption in a semiconductor optical amplifier with a laterally magnetized ferromagnetic metal contact. Current injection in the active structure compensates for the loss in the forward propagation direction. Monolithic integration of this optical isolator configuration with active InP-based photonic devices is straightforward. The combination of AlGaInAs/ InP active material and the metal alloy Co 50 Fe 50 results in greatly improved performance. 99 dB/ cm TM mode isolation and significantly reduced insertion loss are demonstrated

Etude de la compatibilité WDM d'un régénérateur tout-optique 2R basé sur un module absorbant saturable à 8 canaux

session Affiches [P54]National audienceDans cet article, nous présentons pour la première fois un module absorbant saturable pigtailisé avec 8 fibres indépendantes. Nous montrons expérimentalement ses qualités pour une régénération 2R à 42.6 Gbit/s et son accordabilité en longueur d'onde

Manufacturing and characterization of III-V on silicon multijunction solar cells

Tandem GaInP/GaAs//Si(inactive) solar cells were manufactured by direct wafer bonding under vacuum. At this early stage, an inactive silicon substrate was used (i.e. n+ Si substrate instead of an active n-p Si junction). Bonded devices presented an Sshaped J-V curve with a kink close to Voc caused by a built-in potential barrier at the III-V//Si interface that reduces the fill factor and therefore the efficiency of the device by 7% compared to the stand-alone GaInP/GaAs tandem cells. Nevertheless, losses in Jsc and Voc caused by the bonding process, account for less than 10%. AlGaAs single junction cells, designed to be bonded on a silicon cell for low concentrator photovoltaics (LCPV), were also manufactured reaching an efficiency of 15.9% under one sun AM1.5G spectrum for a 2 cm² cell

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a prospective study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a commercially available Si template by direct MOVPE growth. The InP top cell and the InGaAs bottom cell were firstly separately grown and optimized using InP substrates, which exhibited conversion efficiencies of 13.5% and 11.4%, respectively. The two devices were then combined in a tandem device by introducing an intermediate InP/AlInAs lattice-matched tunnel junction, showing an efficiency of 18.4%. As an intermediate step towards the realization of the tandem device on Si, the InP and InGaAs single junction solar cells were grown on top of a commercial InP/GaP/Si template. This transitional stage enabled to isolate and evaluate the effects of the growth of III-V on Si on the photovoltaic performance through the comparison with the aforementioned devices on InP. Each cell was electrically characterized by external quantum efficiency and dark and illuminated current-voltage under solar simulator. The material quality was also analyzed by means of X-ray diffraction, Atomic-Force Microscopy, Transmission Electron and Scanning Electron Microscopy. The III-V on Si devices showed efficiencies of 3.6% and 2.0% for the InP and InGaAs solar cells, respectively

Pourquoi Karstologia ?

Nicod Jean, Decobert Michel, Fabre Guilhem, Maire Richard. Pourquoi Karstologia ?. In: Karstologia : revue de karstologie et de spéléologie physique, n°1, 1er semestre 1983. p. 1

Improving the understanding of the KPFM technique through analyses of InP multilayers with associated modelling

International audienc

Two-dimensional carrier profiling on InP:Zn MOVPE epitaxially grown layers by Kelvin Probe Force Microscopy with associated modelling

International audienc

High speed, high switching contrast quantum well saturable absorber for 160 Gbit/s operation

CLEO subject 8 "Ultrafast Optics, Optoelectronics and Applications", technical session CThD "Ultrafast Switches" [CThD3]International audienceWe report on a novel quantum well saturable absorber device whose measured response time of 1.5 psec and contrast of at least 4 dB make it suitable for all-optical extinction ratio enhancement at 160 Gbit/s