Communications Biophysics

Contains reports on two research projects.United States Air Force (Contract AF19(604)-4112

Growth and properties of few-layer graphene prepared by chemical vapor deposition

The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process and are responsible for the different structural formations found. Measurements of the electrical and mechanical properties on the centimeter scale provide evidence of a large scale structural continuity: 1) in the temperature dependence of the electrical conductivity, a non-zero value near 0 K indicates the metallic character of electronic transport; 2) the Young's modulus of a pristine polycarbonate film (1.37 GPa) improves significantly when covered with FLG (1.85 GPa). The latter indicates an extraordinary Young modulus value of the FLG-coating of TPa orders of magnitude. Raman and optical spectroscopy support the previous conclusions. The sample can be used as a flexible and transparent electrode and is suitable for special membranes to detect and study individual molecules in high resolution TEM

Nanoscale tunable reduction of graphene oxide for graphene electronics

International audienceGraphene is now recognized as the most likely carbon-based successor material for CMOS electronics. Recently, interest in graphene oxide (GO) has risen for producing large-scale flexible conductors and for its potential to open an electronic gap in graphene structures. We report on a means to tune the topographical and electrical properties of graphene-based materials with nanoscopic resolution by local thermal reduction of GO with a nano-size tip. The reduced GO nanostructures show an increase in conductivity up to four orders of magnitude as compared to pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nm have been produced in oxidized epitaxial graphene films in a single step that is clean, rapid and reliable

Graphene Photonics and Optoelectronics

The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.Comment: Review Nature Photonics, in pres

How Graphene Is Cut upon Oxidation?

Our first principles calculations reveal that oxidative cut of graphene is realized by forming epoxy and then carbonyl pairs. Direct forming carbonyl pair to tear graphene up from an edge position is not favorable in energy. This atomic picture is valuable for developing effective graphene manipulation means. The proposed epoxy pairs may be related to some long puzzling experimental observations on graphene oxide

Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces.Comment: 12 pages, 4 figures. submitted to Nano Letter

Engineered nonlinear lattices

We show that with the quasi-phase-matching technique it is possible to fabricate stripes of nonlinearity that trap and guide light like waveguides. We investigate an array of such stripes and find that when the stripes are sufficiently narrow, the beam dynamics is governed by a quadratic nonlinear discrete equation. The proposed structure therefore provides an experimental setting for exploring discrete effects in a controlled manner. In particular, we show propagation of breathers that are eventually trapped by discreteness. When the stripes are wide the beams evolve in a structure we term a quasilattice, which interpolates between a lattice system and a continuous system.Peer ReviewedPostprint (published version

Growth of large-area single- and bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces

We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition(CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5-11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrystalline Ni film. The number density of sites with multilayer graphene/graphite (>2 layers) is reduced as the cooling rate decreases. These films can also be transferred to other substrates and their sizes are only limited by the sizes of the Ni film and the CVD chamber. Here, we demonstrate the formation of films as large as 1 in2. These findings represent an important step towards the fabrication of large-scale high-quality graphene samples

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.Comment: 13 pages including supplimental material. Submitted to Nature Materials 2/23/200