Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film

International audienceThe noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency noise versus the temperature allows to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps

Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs

International audienceIn this work, the static and low frequency noisecharacterization of standard and rotated UTBOX n - typetransistors is reported. The main short channel effects and analogparameters are studied in order to investigate the impact of thechannel orientation: versus . In addition to theimprovement on the electrical properties for therotated - channel devices, the 1/f noise level is found to be quitesimilar for long - channel devices for both rotated and standardchannel transistors. Low frequency noise spectroscopy is alsoused as a diagnostic tool in order to identify traps in the Si film

Low frequency noise spectroscopy in rotated UTBOX nMOSFETs

International audienceThe low frequency noise measurements as afunction of temperature are used as a non-destructive devicecharacterization tool in order to evaluate the quality of the siliconfilm and to identify traps induced during the device processing instandard and rotated UTBOX n-type transistors.By comparing two methods, one to estimate the volume trapdensity and another to estimate the effective trap density of theidentified traps in the Si film, it was found that the correctionfactor B is lower than the theoretically predicted one forconventional planar single gate transistors

Gateless 1T-DRAM on n-channel bulk FinFETs

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Low temperature noise spectroscopy of p-channel SOI FinFETs

International audienceThe aim of this study is to use the excess low frequency noise versus the temperature in order to characterize the traps in the depleted silicon film of p-channel FinFETs on standard and strained substrates. An important number of identified traps related to boron and carbon can be observed, in particular for the strained substrate devices

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

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Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS

International audienceThe impact of different gate dielectrics on the low-frequency (LF) noise behavior is investigated in UTBOX SOI nMOSFETs. Hafnium silicate (HfSiO) devices are compared to silicon dioxide (SiO2) ones in terms of low-frequency noise apart from the analysis of both front and backchannels. Despite the improvement of process steps for obtaining good dielectric layers, high-k devices have shown elevated current noise spectral density due to the higher number of traps which also degrades the front-channel mobility. Although the buried oxide (BOX) of both wafers is formed by thermal SiO2, the strong electrostatic coupling between front and back-channels has resulted in a worse noise performance for high-k devices even at the back interface

Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs

International audienceThe impact of different dielectrics has been compared in UTBOX SOI nMOSFETs, focusing on the lowfrequency noise behaviour. High-k devices have shown higher current noise spectral density due to the higher number of traps that also degrades the front-channel mobility. The back interface presents similar performance in both SiO2 and high-k wafers while generation-recombination (GR) centers have been noticed in the SiO2 devices ascribed to traps presented in the silicon film

Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs

International audienceLow frequency noise measurements were performed in n-channel UTBOX transistors fabricated on silicon on insulator (SOI) substrates. The noise spectra contain 1/f and Lorentzian components; it was found that the carrier number fluctuations are responsible for the 1/f noise; the variation of the low frequency noise versus temperature permits to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps