Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs

Abstract

International audienceIn this work, the static and low frequency noisecharacterization of standard and rotated UTBOX n - typetransistors is reported. The main short channel effects and analogparameters are studied in order to investigate the impact of thechannel orientation: versus . In addition to theimprovement on the electrical properties for therotated - channel devices, the 1/f noise level is found to be quitesimilar for long - channel devices for both rotated and standardchannel transistors. Low frequency noise spectroscopy is alsoused as a diagnostic tool in order to identify traps in the Si film