Low-frequency noise for different gate dielectrics on state-of-the-art UTBOX SOI nMOSFETs

Abstract

International audienceThe impact of different dielectrics has been compared in UTBOX SOI nMOSFETs, focusing on the lowfrequency noise behaviour. High-k devices have shown higher current noise spectral density due to the higher number of traps that also degrades the front-channel mobility. The back interface presents similar performance in both SiO2 and high-k wafers while generation-recombination (GR) centers have been noticed in the SiO2 devices ascribed to traps presented in the silicon film