15 research outputs found
Cosmic ray oriented performance studies for the JEM-EUSO first level trigger
JEM-EUSO is a space mission designed to investigate Ultra-High Energy Cosmic Rays and Neutrinos (E > 5 ⋅ 1019 eV) from the International Space Station (ISS). Looking down from above its wide angle telescope is able to observe their air showers and collect such data from a very wide area. Highly specific trigger algorithms are needed to drastically reduce the data load in the presence of both atmospheric and human activity related background light, yet retain the rare cosmic ray events recorded in the telescope. We report the performance in offline testing of the first level trigger algorithm on data from JEM-EUSO prototypes and laboratory measurements observing different light sources: data taken during a high altitude balloon flight over Canada, laser pulses observed from the ground traversing the real atmosphere, and model landscapes reproducing realistic aspect ratios and light conditions as would be seen from the ISS itself. The first level trigger logic successfully kept the trigger rate within the permissible bounds when challenged with artificially produced as well as naturally encountered night sky background fluctuations and while retaining events with general air-shower characteristics
A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node
International audienceThis letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe f(T) HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pullmeasurements are presented after having describing the measurement setup. A state-of-the-art 30.1 mW / mu m(2) Si/SiGe HBT is demonstrated thanks to a layout optimization
Lithofaciès, paléogéographie et corrélations au passage Cénomanien/Turonien dans l'Atlas saharien (Ouled Naïl, Zibans, Aurès et Hodna, Algérie)
International audienceUne douzaine de coupes levées dans les massifs des Ouled Naïl, du Hodna et de l'Aurès permettent de décrire l'évolution paléogéographique particulière de ce domaine situé sur la flexure nord-saharienne, au moment de la crise du passage Cénomanien-Turonien. Trois périodes sont distinguées. Au cours de la première (Cénomanien moyen-supérieur p.p.), une paléogéographie globalement de rampe s'établit entre la plate-forme saharienne et le domaine plus profond de l'Atlas Saharien. La deuxième période couvre le passage Cénomanien-Turonien (C/T). Elle est marquée par un changement paléogéographique très net. Juste avant le dépôt des black shales du passage C/T, une élévation modérée du niveau marin relatif se produit. Les carbonates de plate-forme sont localement capables d'accommoder cette élévation. Il en résulte une paléogéographie particulière faite de plates-formes carbonatées isolées, séparées par des ensellements où se dépose, en équivalent latéral de faciès, une couche de calcaires fins, de 15 mètres à moins d'un mètre d'épaisseur selon les secteurs. A plus grande échelle, ces ensellements ont pu constituer des corridors assurant la communication des bassins intra-sahariens de même âge (Tinrhert, Tademaït) avec la Téthys
A fully - reflectometer in G band in 55 nm SiGe BiCMOS
International audienceThis paper describes an in-situ reflectometer for one port VNA in 160 to 200 GHz band (G Band). The proposed system is fabricated in 55 nm SiGe BiCMOS technology from STMicroelectronics. Measured performances of system shown 110 mW of power DC consumption from a 1.2 V supply. A 180 GHz nMOS is measured as the device-under-test (DUT) after an in-situ calibration. The results obtained using this fully integrated VNA have been compared to a commercial VNA. A discrepancy of 0.3 dB is noted between the two systems on magnitude over a wide frequency range 172-192 GHz. Without calibration, the “raw” dynamics range of the system is limited by the directivity of the coupler which is 20 dB at 140-220 GHz. This dynamic will be improved after the calibration. The SiGe chip size is 3.3 mm . To our best knowledge, the presented in-situ VNA have the first results compared to the recently published and are the first with an in-situ calibration integrated in SiGe or CMOS technologies