过敏性鼻炎的中医辨证论治

针对近年有关过敏性鼻炎的文献和资料进行分析和总结,探讨中医如何治疗过敏性鼻炎。在中医辨证论治方面,病因病机为肺脾肾气虚、阳虚,治法以温阳、益气为主

Study of the Photovoltaic Properties of Tin Oxide/Porous Silicon/Silicon

测量了二氧化锡（SnO2）/多孔硅（PS）/硅（SI）的光电压谱，分析表明：在SnO2/PS/SI材料中存在着两个异质结；当样品吸附还原性气体时，其光电压明显下降。当样品在1%液化石油气的氛围时（相对于空气），光电压减少了16.4%-27.5%；在1%CO氛围时，减少了8.1%-19.4%；在1%H2氛围时，减少了12.1%-14.9%，因此SnO2/PS/SI可作为一种新的敏感元件。文中还对测量结果进行了讨论分析。The photovoltage spectra of Tin Oxide/Porous Silicon/Silicon(SnO2/PS/Si)have been studied.It is shown that there exist two heterojunctions inSnO2/PS/Si structure.The photovoltage decreases evidently when the sample absorbes reducing gas.The photovoltage decreases by 16.4-27.5 percent when theabsorbed gas contains 1 percent liquiFied petroleum, by 8.1 19.4 percent when thesample absorbes gas with 1 percent CO,and by 12.1-14.9 percent when the sample absorbes gas with 1 percent H,.The experimental results indicate that SnO2/PS/Si is a good material For gas sensor.The mechamism For the gas absorption ofSnO2/PS/Si is discussed.国家和福建省自然科学基

Study of photovoltaic characteristics of SnO_2/Si

采用CVd方法在硅单晶上制备SnO2薄膜，对不同硅衬底及在不同温度下淀积SnO2制得SnO2/SI进行光电压谱的测量，得出最佳的制备温度；采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。Tin oxide Films are deposited by CVD method on single crystal silicon.The eFFects of diFFerent deposition temperatures and substrates on the photovoltaic characteristics are studied.Using the metal-semiconductor contact model,the calculation Formulas are derived.The diFFusion length of minority carrier,interFace recombination speed and heterojunction barrier width are calculated.国家自然科学基金;福建省科学基

自组装金团簇电极库仑台阶现象和电化学阻抗谱研究

采用示差脉冲伏安法研究了自组装单层保护金纳米团簇(C8AuMPC)在常温下二氯甲烷溶液中的量子化电容充电效应.研究结果表明,该团簇在-0.8~0.8V电位范围内有4对明显的量子化电容充电峰.同时采用电化学阻抗谱对C8AuMPC修饰金电极体系的界面结构进行了表征,研究结果表明,MPC自组装层存在两个界面,即金电极-MPC层界面和MPC层-溶液界面;这两个界面的界面电容在MPC的零电荷电位(ca.-0.2V)附近均基本保持不变,随着电位正移或负移到一定程度,界面电容发生变化.进一步利用双隧道结金属岛库仑阻塞效应理论讨论了已有报道中对MPC量子化电容充电的理论分析结果,并证明电化学阻抗谱也是研究MPC量子化电容充电效应的有效方法.另外,用示差脉冲伏安法及循环伏安法研究了电活性物种二茂铁对C8AuMPC量子化电容充电的影响,发现溶液中的电活性物种对MPC层-溶液界面的电子传递的贡献可以忽略,表明该界面的电子传递主要发生在纳米粒子之间

The EFFect of Preparation Conditions on the Properties of SnO_2/Si

研究了沉积温度、SnCl4溶液的浓度、掺Pd等对SnO2/SI光电压的影响，测量了SnO2/SI的光电压谱，得出最佳的制备条件，进行了有关计算和分析。Some tin oxide Films are deposited by CVD method on single crystal silicons.The eFFect of diFFerent deposition conditions, such as diFFerent substrate temperatures, SnCI4 solutions and Pd doping,on photovoltaic properties of the Films are studied.The best preparation conditions are obtained.Relative parameters is calculated From the photovoltaic spectra.国家自然科学基金;福建省自然科学基

自组装单层保护金纳米团簇的量子化电容充电

本文研究自组装单层保护金纳米团簇(C12Au MPC)在常温下二氯甲烷溶液中的量子化电容充电效应.示差脉冲伏安曲线显示金核平均直径为2.0 nm的C12Au MPC在-0.6~0.6 V电位区间内有9个明显的量子化电容充电峰,其双电层电容总的变化趋势为在零电荷电位附近最小,随着电位正移或负移电容变大.而且随着该金核尺寸的增大,MPC双电层电容值也变大

Study of Parameters of Neutron-Irradiated Single Crystal Silicon

在不同温度和红外光照下，测量了经中子辐照的单晶硅表面光电压，确定了其深能级的位置和少子扩散长度；由双能级复合理论，推导了中子辐照单晶硅的深能级复合中心和寿命的计算公式；计算了热中子辐照和高能中子辐照单晶硅后的深能级密度、费米能级和其他有关重要参数。The photovoltage spectra of neutron-irradiated single crystal silicon under inFra-red illumination and at low temperatures are measured.The deep level and minority carrier diFFusion length are determined.By the double-level recombination model,the statistics Formulas of the deep level and liFetime are derived For neutron-irradiated single crystal silicon.Some important parameters of the silicon irradiated with high energy and thermal neutron are calculated respectively.国家自然科学基

用辛烷基硫醇单层保护Au纳米粒子制备CO氧化催化剂Au/γ-Al_2O_3

采用两相法合成出含活性组分Au的辛烷基硫醇单层保护Au纳米粒子(C8AuNPs)的正己烷溶胶,用"逐次浸润"法将C8AuNPs负载在γ-Al2O3上,经真空干燥及活化处理制得Au/γ-Al2O3催化剂.所制得的Au催化剂前体C8AuNPs/γ-Al2O3表面Au粒子平均粒径可控制在2-3nm范围内,且分布比较单一;催化剂活性评价600h后,其表面Au的粒径仍主要分布在2-4nm范围内;真空干燥温度影响Au催化剂的粒子尺寸和催化活性,随着真空干燥温度的提高,Au纳米粒子的粒径增大.将所制备的催化剂用于低温CO氧化反应,催化活性评价结果表明,经25℃真空干燥制得的2.5%(质量分数,w)Au/γ-Al2O3具有较高的活性和长期稳定性,其催化CO完全转化的最低温度为-19℃,在15℃下CO完全转化时Au/γ-Al2O3的单程寿命至少900h;4.0%(w)Au/γ-Al2O3在15℃和进料中含水条件下对CO完全氧化的单程寿命不低于2000h,可见催化剂具有强的抗潮湿中毒特性.综合上述实验结果,讨论了影响Au/γ-Al2O3催化剂活性的可能因素

碱性介质中正丁醇在铂电极上吸附和氧化的电化学原位FTIR反射光谱和EQCM研究

运用电化学循环伏安(CV)、原位FTIR反射光谱和电化学石英晶体微天平(EQCM)等方法研究了碱性介质中正丁醇在Pt电极表面吸附和氧化行为。结果表明:正丁醇电氧化过程与溶液酸碱性有着密切的关系。酸性介质中正丁醇在Pt电极上的CV曲线有2个正向氧化峰,而碱性介质中只有1个正向氧化峰,第2个氧化峰的消失可能是由于碱性介质中Pt电极表面钝化引起的。原位FTIR反射光谱检测到,在实验条件下,碱性介质中正丁醇电氧化过程的最终产物只有丁酸根。EQCM研究还从电极表面质量定量变化的角度提供了正丁醇反应机理的新数据

A Study on Deep-Level and Minority-Carrier LiFetime For High Resistivity Silicon

本文测量了n型高阻硅在9种不同浓度的金掺杂前后少子寿命的变化，以及两类不同电阻率的n型高阻硅在7种不同辐照剂量的1MEV高能电子辐照前后少子寿命的变化；测量了金掺杂和高能电子辐照在硅中引入的主要深能级；研究对比金掺杂和高能电子辐照对硅单晶性能的影响及其在提高电子器件开关速度方面的应用。Changes in minority-carrier liFetime For n-type high resistivity silicon beFore and aFter Au doping at 9 diFFer-ent concentrations and changes in the liFetime of minority carriers in two kinds of n-type high resistivity silicon beFore and aFter 1MeV high-energy electron irradiation at 7 diFFerent dosages have been measured.Main deep levels introduced by Au doping and high energy irradiation have been determined. The eFFects of Au doping and high energy radiation on the properties of the silicon are investigated.Their applications in the improvement of the switching speed of electronic de-vices are discussed