基于区域神经网络的TFT-LCD电路缺陷检测方法

对薄膜晶体管液晶显示器(TFT-LCD)边框电路中细微、复杂的缺陷进行检测,一直是自动光学检测(AOI)的一个难点。本文提出基于改进的快速区域神经网络(Faster R-CNN)算法对TFT-LCD边框电路的缺陷进行检测。首先在共享卷积层进行特征提取,然后通过多层的区域提议网络结构生成精确候选区域,根据候选区域的特征和目标分类实现对缺陷的识别和定位。同时设计多种有效的网络结构并详细分析网络层深度及卷积核大小对检测效果的影响,最后进行不同算法的比较。在实际构建的数据集上实验,结果表明本文方法具有良好的检测效果,对6种类别的液晶屏边框电路缺陷识别定位达到平均每张0.12 s的检测速度和94.6%的准确率。福建省高校产学合作项目(2016H6026

一种基于差分进化神经网络的模糊控制方法

在模糊控制的实际应用中,隶属函数的选取往往依靠专家经验设定。这使得模糊控制由于隶属函数设定复杂,加大了实际应用的难度,往往达不到较好的控制效果。本文从RBF神经网络的特点出发,使用差分进化算法分成两个部分来优化RBF神经网络的参数,使之可以自动设置模糊控制的隶属函数。再通过模糊控制实时调整的PID控制器的三个参数,并分别对二阶系统和倒立摆系统进行仿真模拟。简化了模糊控制的设置方法,提高了进化算法在优化神经网络参数过程中的计算效率,取得了较好的控制效果。福建省高校产学合作项目(2016H6026

Optoelectronic characteristics of InGaAs (P)/InP strained quantum well and superlattice

利用低压金属有机化合物化学汽相沉积（MOCVd）生长技术在InP衬底上生长IngAAS/InP应变量子阱、超晶格和IngAASP/InP量子阱结构材料，利用77k光荧光（Pl）测量这一应变量子阱和量子阱的光学性质，利用双晶X光测量应变超晶格的性质。InGaAs/InP strained quantum well and superlattice,and InGaAsP quantum well were grown on InP substrate by low-pressure metal organic vapor deposition (LP-MOCVD).The optical characteristics of the strained quantum well and quantum well were studied by photoluminescent (PL) at 77 K, while the characteristics of InGaAs/InP strained superlattice are measured by X-ray double crystal diFFraction.福建省自然科学基金;国家自然科学基

Structure design and preparation of porous SiGe/Si heterostructure material microcavity

提出了采用多孔SIgE/SI异质多层结构来获得布拉格反射镜方法.首先采用传输矩阵方法设计了多孔SIgE/SI异质材料微腔结构,并通过超高真空化学气相沉积与电化学阳极腐蚀相结合的方法实验制备了两种结构的微腔,同时对微腔进行光学性质表征,并详细讨论了实验结果.We propose a method for preparing the Bragg reflectors by porous SiGe/Si heterogeneous multilayer structure.Two kinds of structure of porous SiGe/Si microcavity are prepared through a method by combining ultra-high vacuum chemical vapor deposition and electrochemical anode,based on the numerical simulations of transfer matrix method.The optical properties of the microcavity are characterized,and the experimental results are discussed in detail.福建省省教育厅基金项目(JB11128);闽江学院科技启动项目(KQ1004

Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector

采用超高真空化学气相沉积(uHV/CVd)技术在SI衬底上外延生长了PIn结构多层gE量子点探测器材料。PIn探测器结构由n型SI衬底,多层gE量子点吸收区,和原位掺杂P型SI盖层构成,电极分别制作于n-SI和P-SI上,以获得好的欧姆接触。制备的SI基gE量子点光电探测器具有较低的暗电流密度(-1 V偏压下为7.35x10-6A/CM2),与SI相比,探测波长延伸到1.31μM波段。The structure of multilayer Ge quantum dots( QDs) was eptaxial grown on Si substrate by ultra-high vacuum chemical vapor deposition( UHV / CVD) technique for detector fabrication.The intrinsic multilayer Ge QDs were acted as an absorption region,while the N-Si substrate and the in situ capped P-Si layer were chosen for the formation of ohmic contact.The fabricated photodetector has a low dark current density( 7.35 × 10- 6A / cm2at- 1 V),and the wavelength limit is extended to 1.31 μm compared with Si photodetector.国家重大科学研究计划(2012CB933503

Advances in Research of Silicon-based Anode Materials for Lithium Ion Batteries

硅作为地球上储量丰富的材料,因为其具有较高的理论比容量和较低的电压平台而成为最有前途的锂离子电池负极材料.但是,硅负极材料具有较大的体积膨胀效应、低电导率、循环性能差等特点,成为阻碍其商业化的最大障碍.研究者们采取了各种方法来克服这些困难.本文总结了近期硅基负极材料通过纳米化、复合化、结构特殊化等方法来提高电池性能的最新进展,并展望硅基负极材料的发展方向.Silicon materials are attractive candidates for the next generation of lithium-ion batteries due to their high capacity, low operation potential, high abundance in the world.The main challenges for the practical implementation of silicon anodes, however, are the huge volume variation during lithiation and delithiation process and the low cycle life.Recently, significant works have been done to overcome the problems.Here, the research progresses in the silicon based anode materials for Li-ion batteries are reviewed; the problems and prospects for these materials are also discussed.国家自然科学基金项目(61176050

The Preparation of Three-dimensional Porous Silicon by Metal-assisted Chemical Etching

以工业级多晶硅粉为原料,采用金属银诱导化学腐蚀的方法制备出三维多孔硅纳米线结构。系统分析了化学腐蚀硅粉的机理,特别是金属银催化剂对制备过程的影响。实验对比了不同腐蚀条件(腐蚀液温度、沉积银溶液浓度、光照条件等)对样品结构形貌和比表面积的影响。研究发现,腐蚀液温度升高有利于腐蚀过程中化学反应的进行;而沉积银溶液中的Ag nO3浓度适中,有利于样品表面形成分布均匀的孔洞;外部光照可增加光生载流子,促进反应进行,加快腐蚀速率,从而提高样品比表面积。通过优化腐蚀条件,得到形貌较优、比表面积较大(530CM2·g-1)的三维多孔硅纳米线结构。Three-dimensional porous silicon was fabricated by metal-assisted chemical etching of commercial polycrystalline silicon particles.The mechanism of etching process especially the effects of Ag catalyst on the formation of porous silicon were systematically investigated.The dependence of the morphologies of the etched structures on the temperature of etching solution, the outside illumination and the metal salt concentration were also discussed.By optimizing the etching conditions, three-dimensional porous silicon-nanowires with best morphology and highest specific surface area( 530 cm2·g-1) was obtained.国家自然科学基金资助项目(61176050); 福建省中青年教师教育科研项目(JA15651

FTIR and XPS Analysis of Directly Bonded Si/Si Interface

【中文文摘】通过新颖的键合方法实现了Si/Si直接键合。采用傅里叶红外透射谱(FTIR)对Si/Si键合界面进行了研究,结果表明,高温退火样品的界面组分为Si和O,无OH和H网络存在。X射线光电子谱(XPS)测试结果进一步表明,界面主要为单质Si和SiOx混合网络,且随着退火温度的升高,界面层Si-Si直接成键的密度也越高。 【英文文摘】The Si/Si direct bonding has been achieved by a new bonding technology. Fourier transform infrared spectrum(FTIR) and X-ray photoelectron spectroscopy(XPS) are used to analyze the interface of Si/Si bonding. The results show that there are notinfrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is consisted of Si and SiO_x. In addition, the research indicates also that the Si/Si bonding density is increased with the increase of bonding temperature

Interface of Si/Si Directly Wafer Bonding

【中文文摘】通过三步直接键合方法实现了 Si/ Si键合。采用 XPS、FTIR、I-V、拉伸强度等手段对 Si/ Si键合结构的界面特性作了深入广泛的研究。研究结果表明 ,高温退火后 ,在键合界面没有 Si-H和 Si-OH网络存在 ,键合界面主要由单质 Si和不定形氧化硅 Si Ox 组成。同时 ,研究还表明 ,I-V特性和键合强度强烈地依赖于退火温度。 【英文文摘】The Si/Si bonding has been achieved by three-step direct wafer bonding technology. Interfacial characteristic has been widely investigated by the X-ray photoelectron spectronscopy (XPS), Fourier transform infrared spectrum (FTIR),I-V and tensile strength. The results show that there are no infrared absorbtion peak related to the Si-H bonding and Si-OH bonding in the interface at high temperature, and the interface is made up of Si and SiO_x. In addition, the researches indicate that both I-V characteristic and bonding energy strongly depend on annealing temperatu re.国家基金 (项目编号 :6 0 0 0 6 0 0 4);; 国家重点基金 (项目编号 :6 0 336 0 1 0 )项目支

Development of Compound Semic onductor Wafer and Device Bonding

【中文文摘】半导体晶片直接键合技术已成为半导体工艺的一门重要技术 ,它对实现不同材料器件的准单片集成、光电子器件的性能改善和新型半导体器件的发展起了极大的推动作用。文中详细叙述了近十年来 - 族化合物半导体键合技术的主要实验方法 ,并对各种键合方法的优缺点进行了比较 ,结合自己的工作对化合物半导体的键合机理和界面特性做了总结 ,针对目前的研究工作和应用做了展望 【英文文摘】Semiconductor wa f er direct bonding is a important techniq ue for integrating devices, improving th e performance of optoelectronic devices and making new devices. This paper prese nts the innovative wafer bonding methods of compound semiconductors, analyses th e advantages and disadvantages of variou s mehtods, then discusses the bonding me chanics and the generic nature of the in terfaces. Finally, examples of bonded de vices are presented.国家自然科学基金资助 (项目编号 :60 0 0 60 0 4