14,329 research outputs found
Spin-polarized tunneling, magnetoresistance and interfacial effects in ferromagnetic junctions
Immunity in barren and enriched housed pigs differing in baseline cortisol concentration
It was shown recently that barren housed pigs (small pens, no substrate) have a blunted circadian rhythm of salivary cortisol as compared to enriched housed pigs (large pens with daily fresh bedding). In the light period, enriched housed pigs showed significantly higher concentrations of cortisol in saliva than barren housed pigs, whereas in the dark period, cortisol concentrations were low in both enriched and barren housed pigs. In the present study, the immunological consequences of the difference in baseline salivary cortisol concentration in the light period were evaluated. It appeared that leukocyte and lymphocyte distributions, and in vitro lymphocyte proliferation following ConcanavalineA (ConA) stimulation in the assay using purified lymphocytes were not affected. However, barren and enriched housed pigs did show a different proliferation response to ConA in the whole blood assay. At day 2 of culture, proliferation was higher in barren housed pigs than in enriched housed pigs, whereas at day 4 of culture, proliferation was higher in enriched housed pigs than in barren housed pigs. Lymphocyte proliferation at day 2 of culture in the whole blood assay correlated negatively with plasma cortisol levels, which might thus explain the higher proliferation in barren housed pigs at day 2 of culture. The in vivo humoral and cellular (delayed type hypersensitivity, DTH) immune response to KLH was not affected by housing conditions. We conclude that, although baseline salivary cortisol concentrations differ between enriched and barren housed pigs, immune function appears to be relatively unaffected.
Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm
Men Are from Mars, Women Are from Venus: Evaluation and Modelling of Verbal Associations
We present a quantitative analysis of human word association pairs and study
the types of relations presented in the associations. We put our main focus on
the correlation between response types and respondent characteristics such as
occupation and gender by contrasting syntagmatic and paradigmatic associations.
Finally, we propose a personalised distributed word association model and show
the importance of incorporating demographic factors into the models commonly
used in natural language processing.Comment: AIST 2017 camera-read
Product Heterogeneity, Intangible Barriers and Distance Decay: The Effect of Multiple Dimensions of Distance on Trade across Different Product Categories
Second order equation of motion for electromagnetic radiation back-reaction
We take the viewpoint that the physically acceptable solutions of the
Lorentz--Dirac equation for radiation back-reaction are actually determined by
a second order equation of motion, the self-force being given as a function of
spacetime location and velocity. We propose three different methods to obtain
this self-force function. For two example systems, we determine the second
order equation of motion exactly in the nonrelativistic regime via each of
these three methods, the three methods leading to the same result. We reveal
that, for both systems considered, back-reaction induces a damping proportional
to velocity and, in addition, it decreases the effect of the external force.Comment: 13 page
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Depletion-Isolation Effect in Vertical MOSFETs During the Transition From Partial to Fully Depleted Operation
A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200–60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias Vdc for which the increased drain–current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60–10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate–gate coupling contribute to the drain–current for pillar thicknesses between 100–40 nm
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