Active optical clock based on four-level quantum system

Active optical clock, a new conception of atomic clock, has been proposed recently. In this report, we propose a scheme of active optical clock based on four-level quantum system. The final accuracy and stability of two-level quantum system are limited by second-order Doppler shift of thermal atomic beam. To three-level quantum system, they are mainly limited by light shift of pumping laser field. These limitations can be avoided effectively by applying the scheme proposed here. Rubidium atom four-level quantum system, as a typical example, is discussed in this paper. The population inversion between $6S_{1/2}$ and $5P_{3/2}$ states can be built up at a time scale of $10^{-6}$s. With the mechanism of active optical clock, in which the cavity mode linewidth is much wider than that of the laser gain profile, it can output a laser with quantum-limited linewidth narrower than 1 Hz in theory. An experimental configuration is designed to realize this active optical clock.Comment: 5 page

GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/AlxGa1-xAs quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, singleparticle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation

Mapping QTLs for mineral element contents in brown and milled rice using an Oryza sativa × O. rufipogon backcross inbred line population

Biofortifying food crops with essential minerals would help to alleviate mineral deficiencies in humans. Detection of quantitative trait loci (QTLs) for mineral nutrient contents in rice was conducted using backcross inbred lines derived from an interspecific cross of Oryza sativa × O. rufipogon. The population was grown in Hangzhou and Lingshui, with the contents of Mg, Zn, Fe, Mn, Cu and Se in brown rice measured in both trials and that in milled rice tested in Hangzhou only. A total of 24 QTLs for mineral element contents were identified, including two for both the brown and milled rice, 17 for brown rice only, and five for milled rice only. All the seven QTLs detected for the mineral contents in milled rice and 13 of the 19 QTLs for the contents in brown rice had the enhancing alleles derived from O. rufipogon. Fifteen QTLs were clustered in seven chromosomal regions, indicating that common genetic-physiological mechanisms were involved for different mineral nutrients and the beneficial alleles could be utilized to improve grain nutritional quality by markerassisted selection

Enhancement of Transition Temperature in FexSe0.5Te0.5 Film via Iron Vacancies

The effects of iron deficiency in FexSe0.5Te0.5 thin films (0.8<x<1) on superconductivity and electronic properties have been studied. A significant enhancement of the superconducting transition temperature (TC) up to 21K was observed in the most Fe deficient film (x=0.8). Based on the observed and simulated structural variation results, there is a high possibility that Fe vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows a strong relationship with the lattice strain effect induced by Fe vacancies. Importantly, the presence of Fe vacancies alters the charge carrier population by introducing electron charge carriers, with the Fe deficient film showing more metallic behavior than the defect-free film. Our study provides a means to enhance the superconductivity and tune the charge carriers via Fe vacancy, with no reliance on chemical doping.Comment: 15 pages, 4 figure

A Review of and Perspectives on Global Change Modeling for Northern Eurasia

Northern Eurasia is made up of a complex and diverse set of physical, ecological, climatic and human systems, which provide important ecosystem services including the storage of substantial stocks of carbon in its terrestrial ecosystems. At the same time, the region has experienced dramatic climate change, natural disturbances and changes in land management practices over the past century. For these reasons, Northern Eurasia is both a critical region to understand and a complex system with substantial challenges for the modeling community. This review is designed to highlight the state of past and ongoing efforts of the research community to understand and model these environmental, socioeconomic, and climatic changes. We further aim to provide perspectives on the future direction of global change modeling to improve our understanding of the role of Northern Eurasia in the coupled human-Earth system. Major modeling efforts have shown that environmental and socioeconomic impacts in Northern Eurasia can have major implications for the biodiversity, ecosystems services, environmental sustainability, and carbon cycle of the region, and beyond. These impacts have the potential to feedback onto and alter the global Earth system. We find that past and ongoing studies have largely focused on specific components of Earth system dynamics and have not systematically examined their feedbacks to the global Earth system and to society. We identify the crucial role of Earth system models in advancing our understanding of feedbacks within the region and with the global system. We further argue for the need for Integrated Assessment Models (IAMs), a suite of models that couple human activity models to Earth system models, which are key to address many emerging issues that require a representation of the coupled human-Earth system.We acknowledge the funding from the US National Aeronautics and Space Administration (NASA) Land-Cover and Land-Use Change (LCLUC) Program, which provided support for Erwan Monier, David Kicklighter, Andrei Sokolov, Qianlai Zhuang and Sergey Paltsev under grant NNX14AD91G and Irina Sokolik under grant NNX14AD88G. Support for Pavel Groisman was provided by Grant 14.B25.31.0026 of the Ministry of Education and Science of the Russian Federation and by Project “Arctic Climate Change and its Impact on Environment, Infrastructures, and Resource Availability” sponsored by ANR (France), RFBR (Russia), and NSF (USA) in response to Belmont Forum Collaborative Research Action on Arctic Observing and Research for Sustainability. The Joint Program on the Science and Policy of Global Change is funded by a number of federal agencies and a consortium of 40 industrial and foundation sponsor (for the complete list see http://globalchange.mit.edu/sponsors)

Atomic scale analysis of N dopants in InAs

The band gap of most III-V semiconductors is strongly reduced with the introduction of only a few percent of N, even if the III-N alloy has a much bigger band gap. N impurities in InAs introduce an impurity state around 1 eV above the conduction-band minimum, much deeper in the band than in other III-V materials. Topographic scanning tunneling spectroscopy measurements (STS) and areal spectroscopy measurements performed on N atoms up to two layers below the (110) surface of InAs show a reduction of the resonance energy of the N atom with increasing depth. This is attributed to tip induced band bending, pulling the N states up at positive bias and acting most strongly on surface N atoms. STS measurements obtained on undoped InAs and N-doped InAs show a band-gap reduction of <0.1 eV. Spacial imaging of features corresponding to N dopants up to two layers below the surface are also compared to density functional theory simulations and show excellent correspondence. Spectroscopy maps of N atoms up to two layers below the surface provide a high-resolution spatial and spectroscopic view of the N atoms. Here the characteristic shape of the N atoms in different layers below the surface is observed as an enhancement of the dI/dV signal compared to the InAs background. At energies above the enhancement a reduction of the dI/dV is observed, which has the same shape and size as the enhancement. This shows that the redistribution of density of states caused by the N impurities is mainly energetic in nature