An International Reading Literacy Study: Factor Structure of the Chinese Version of the Student Questionnaire (PIRLS-SQCV 2011)

The student questionnaire (PIRLS-SQ 2011) of the Progress in International Reading Literacy Study (PIRLS) was designed to gather information from pupils on reading literacy development as to aspects of pupils’ self-lives, home, and school lives across countries/districts. In order to serve the purposes of research and international comparison, the questionnaire was translated into various languages. Using exploratory factor analysis (EFA) and confirmatory factor analysis (CFA), the current study investigates the psychometric properties of the Chinese version of the student questionnaire (PIRLS-SQCV 2011) and identifies its underlying factor structure among Chinese fourth-grade pupils in Hong Kong. A 10-factor structure model was identified and much resemblance could be drawn to the original PIRLS structure. While the similarity allows international comparisons of studies in different places following the PIRLS strategy, the findings of this study add to extant literature on the relationship between student factors and reading achievement.published_or_final_versio

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

Non-polar (11-20) InGaN quantum dots (QDs) have been grown using a modified droplet epitaxy method by metal-organic vapour phase epitaxy on top of a 15-period AlN/GaN distributed Bragg reflector (DBR) on a-plane GaN pseudo-substrate prepared by epitaxial lateral overgrowth (ELOG), in which the QDs are located at the centre of a ca. 180 nm GaN layer. The AlN/GaN DBR has shown a peak reflectivity of ~80% at a wavelength of ~454 nm with a 49 nm wide, flat stop-band. Variations in layer thicknesses observed by cross-sectional scanning transmission electron microscopy have been identified as the main source of degradation of the DBR reflectivity. The presence of trenches due to incomplete coalescence of the ELOG template and the formation of cracks due to relaxation of tensile strain during the DBR growth may distort the DBR and further reduce the reflectivity. The DBR top surface is very smooth and does not have a detrimental effect on the subsequent growth of QDs. Enhanced single QD emission at 20 K was observed in cathodoluminescence.This work has been funded by the EPSRC (Grant No. EP/H047816/1 and EP/J001627/1).This is the final version of the article. It first appeared from Elsevier via http://dx.doi.org/10.1016/j.spmi.2015.10.00

Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures

We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using this method, a significant broadband surface antireflection and a considerable omnidirectional luminescence enhancement are obtained. The experimental observations are then supported by numerical simulations. It is believed that our fabrication method will be well suitable for large-scale production in the future

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.This work was funded by the EPSRC (Grant Nos. EP/J003603/1 and EP/H047816/1).This is the final published version. It first appeared at http://scitation.aip.org/content/aip/journal/aplmater/2/12/10.1063/1.4904068

Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography

Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.The European Research Council has provided financial support under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 279361 (MACONS). This work was also funded in part by the EPSRC (Grant Nos. EP/H047816/1, EP/H0495331 and EP/J003603/1).This is the author accepted manuscript. The final version is available via AIP at http://scitation.aip.org/content/aip/journal/apl/106/7/10.1063/1.4909514

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.This work was carried out with the support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/NO17927/1 and EP/J003603/1. R. Oliver acknowledges funding from the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013) ERC grant agreement number 279361 (MACONS) and the from the Royal Academy of Engineers/Leverhulme Trust senior research fellowship

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

How to suppress the performance deterioration of thermoelectric materials in the intrinsic excitation region remains a key challenge. The magnetic transition of permanent magnet nanoparticles from ferromagnetism to paramagnetism provides an effective approach to finding the solution to this challenge. Here, we have designed and prepared magnetic nanocomposite thermoelectric materials consisting of BaFe12O19 nanoparticles and Ba0.3In0.3Co4Sb12 matrix. It was found that the electrical transport behaviours of the nanocomposites are controlled by the magnetic transition of BaFe12O19 nanoparticles from ferromagnetism to paramagnetism. BaFe12O19 nanoparticles trap electrons below the Curie temperature (TC) and release the trapped electrons above the TC, playing an ‘electron repository’ role in maintaining high figure of merit ZT. BaFe12O19 nanoparticles produce two types of magnetoelectric effect—electron spiral motion and magnon-drag thermopower—as well as enhancing phonon scattering. Our work demonstrates that the performance deterioration of thermoelectric materials in the intrinsic excitation region can be suppressed through the magnetic transition of permanent magnet nanoparticles

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substrates

We investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-plane GaN templates and reveal that as the indium content increases there is an increased tendency for non-random clustering of indium atoms to occur. Based on the atom probe tomography data used to reveal this clustering, we develop a k.p model that takes these features into account, and links the observed nanostructure to the optical properties of the quantum wells. The calculations show that electrons and holes tend to co-localise at indium clusters. The transition energies between the electron and hole states are strongly affected by the shape and size of the clusters. Hence, clustering contributes to the very large line widths observed in the experimental low temperature photoluminescence spectra. Also, the emission from m-plane InGaN quantum wells is strongly linearly polarised. Clustering does not alter the theoretically predicted polarisation properties, even when the shape of the cluster is strongly asymmetric. Overall, however, we show that the presence of clustering does impact the optical properties, illustrating the importance of careful characterisation of the nanoscale structure of m-plane InGaN quantum wells and that atom probe tomography is a useful and important tool to address this problem

Application of a novel fluorescence probe in the determination of nucleic acids

A novel fluorimetric method has been developed for rapid determination of DNA and RNA with hypocrellin A (HA) as a fluorescence probe, based on the fluorescence enhancement of HA in the presence of DNA or RNA. Maximum fluorescence is produced in the pH range 3.4-4.0, with maximum excitation and emission wavelengths at 470 and 600 nm, respectively. Under optimal conditions, the calibration graphs are linear over the range 0-200.0 ng cm(-3) for calf thymus DNA and 13.0-200.0 ng cm(-3) for yeast RNA, respectively. The corresponding detection limits are 5.0 ng cm(-3) for calf thymus DNA and 13.0 ng cm(-3) for yeast RNA. The relative standard deviation of six replicate measurements is 4.5% for 100 ng cm(-3) calf thymus DNA, DNA could be determined in the presence of 20% m/m yeast RNA. The mechanism for the binding of HA to DNA is also studied