Magnetic-field tuning of the spin dynamics in the magnetic topological insulators (MnBi₂Te₄)(Bi₂Te₃₎<i>n</i>

We report a high-frequency/high-magnetic field electron spin resonance (HF-ESR) spectroscopy study in the sub-THz frequency domain of the two representatives of the family of magnetic topological insulators (MnBi2Te4)(Bi2Te3)n with n = 0 and 1. The HF-ESR measurements in the magnetically ordered state at a low temperature of T=4K combined with the calculations of the resonance modes showed that the spin dynamics in MnBi4Te7 is typical for an anisotropic easy-axis type ferromagnet whereas MnBi2Te4 demonstrates excitations of an anisotropic easy-axis type antiferromagnet. However, by applying the field stronger than a threshold value ∼6T, we observed in MnBi2Te4 a crossover from the antiferromagnetic (AFM) resonance modes to the ferromagnetic (FM) modes, whose properties are very similar to the FM response of MnBi4Te7. We attribute this remarkably unusual effect unexpected for a canonical easy-axis antiferromagnet, which, additionally, can be accurately reproduced by numerical calculations of the excitation modes, to the closeness of the strength of the AFM exchange and magnetic anisotropy energies which appears to be a very specific feature of this compound. Our experimental data evidences that the spin dynamics of the magnetic building blocks of these compounds, the Mn-based septuple layers (SLs), is inherently ferromagnetic, featuring persisting short-range FM correlations far above the magnetic ordering temperature as soon as the SLs get decoupled either by introducing a nonmagnetic quintuple interlayer, as in MnBi4Te7, or by applying a moderate magnetic field, as in MnBi2Te4, which may have an effect on the surface topological band structure of these compounds.</p

Anomalous Nernst effect in the topological and magnetic material MnBi₄Te₇

The recently discovered magnetic topological insulators (MnBi2Te4)(Bi2Te3)n, n = 0–4, are an ideal playground to study the influence of magnetic properties on band topology, giving access to diverse quantum states in a single compound. In the low temperature-antiferromagnetic state and vanishing magnetic field, the n = 1 system is a topological insulator protected by a combination of time reversal and a translation symmetries. It has been argued that, when the antiferromagnetic phase is forced to a the fully spin polarized state by the application of an external magnetic field, this system develops Weyl cones in the conduction band, which become accessible in presence of an intrinsic electronic doping. In this work, we experimentally prove the raising of field-induced Weyl state through the detection of an intrinsic anomalous Nernst effect in a bulk single crystal of MnBi4Te7.</p

Strongly anisotropic spin dynamics in magnetic topological insulators

The recent discovery of magnetic topological insulators has opened new avenues to explore exotic states of matter that can emerge from the interplay between topological electronic states and magnetic degrees of freedom, be it ordered or strongly fluctuating. Motivated by the effects that the dynamics of the magnetic moments can have on the topological surface states, we investigate the magnetic fluctuations across the (MnBi$_{\text{2}}$Te$_{\text{4}}$)(Bi$_{\text{2}}$Te$_{\text{3}}$)$_{\text{n}}$ family. Our paramagnetic electron spin resonance experiments reveal contrasting Mn spin dynamics in different compounds, which manifests in a strongly anisotropic Mn spin relaxation in MnBi$_{\text{2}}$Te$_{\text{4}}$ while being almost isotropic in MnBi$_{\text{4}}$Te$_{\text{7}}$. Our density-functional calculations explain these striking observations in terms of the sensitivity of the local electronic structure to the Mn spin-orientation, and indicate that the anisotropy of the magnetic fluctuations can be controlled by the carrier density, which may directly affect the electronic topological surface states

Surface states and Rashba-type spin polarization in antiferromagnetic MnBi2_2Te4_4

The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.Comment: Revised versio

Two predominant molecular subtypes of spinal meningioma: thoracic NF2‑mutant tumors strongly associated with female sex, and cervical AKT1‑mutant tumors originating ventral to the spinal cord

Spinal meningiomas (SM) comprise 5–10% of primary meningiomas and up to 30% of spinal intradural tumors. SMs are usually sporadic, but rarely, they can develop in association with genetic diseases like neurofibromatosis type 2 or schwannomatosis [2, 4, 6]. While the mutational landscape of intracranial meningiomas has been extensively studied [3, 5, 11, 14], our understanding of the molecular profile of SM remains incomplete. To date, genomic studies in SMs have been underpowered to make significant conclusions about the correlations between main genomic driver alterations and clinical features of these tumors. Here, we sought to assess the mutational profile of WHO grade 1 SM and to investigate the clinical characteristics that correlate with the genomic status

Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy'' analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith we regard a 2D sheet, which structurally and electronically resembles Xenes, in a 3D periodic, rhombohedral structure of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. This structural family is predicted to host a 3D strong topological insulator with Z(2) = 1;(111) as a result of functionalization of the Xene derivative by covalent interactions. The parent structure GaGeTe is a long-known bulk semiconductor; the "heavy'', isostructural analogues InSnTe and GaSnTe are predicted to be dynamically stable. Spin-orbit interaction in InSnTe opens a small topological band gap with inverted gap edges that are mainly composed of the In-5s and Te-5p states. Our simulations classify GaSnTe as a semimetal with topological properties, whereas the verdict for GaGeTe is not conclusive and urges further experimental verification. The AXTe family structures can be regarded as stacks of 2D layered cut-outs from a zincblende-type lattice and are composed of elements that are broadly used in modern semiconductor devices; hence they represent an accessible, attractive alternative for applications in spintronics. The layered nature of AXTe should facilitate the exfoliation of their hextuple layers and manufacture of heterostructures