Dual Q-switched laser outputs from a single lasing medium using an intracavity MEMS micromirror array

An intracavity array of individually controlled microelectromechanical system scanning micromirrors was used to actively Q-switch a single side-pumped Nd:YAG gain medium. Two equal power independent laser outputs were simultaneously obtained by separate actuation of two adjacent micromirrors with a combined average output power of 125 mW. Pulse durations of 28 ns FWHM at 8.7 kHz repetition frequency and 34 ns FWHM at 7.9 kHz repetition frequency were observed for the two output beams with beam quality factors M2 of 1.2 and 1.1 and peak powers of 253 W and 232 W, respectively

Airy beams from a microchip laser

It is theoretically shown that an end-pumped microchip laser formed by a thin laser crystal with plane-plane but slightly tilted facets can emit, under appropriate pumping conditions and near a crystal edge, a truncated self-accelerating Airy output beam.Comment: to be published in Optics Letter

Picosecond laser source at 1 MHz with continuous tunability in the visible red band

We report the first demonstration to our knowledge of a continuously tunable picosecond laser operating around 1 MHz. The emission can be tuned from 640 to 685 nm and the repetition rate from 200 kHz to 1 MHz with a pulse duration of less than 200 ps. The system is based on a Nd:YVO4 passively Q-switched microchip laser providing a few tens of nJ per pulse. Two cascaded stages of amplification are then used to increase the pulse energy to several microJ . The frequency doubled radiation is then used to pump a periodically-poled-niobate-lithium (PPLN)-based optical parametric generator in an all-solid-state architecture. 20 nJ of tunable signal radiation are obtained. We also demonstrated 300-ps pulses generation in the UV (355 nm) at 1 MHz

Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns