Electrochemical synthesis of zinc complexes and preparation of nano-sized ZnO

Zinc complexes were directly prepared by using zinc metal as sacrificing anode in a cell without separating the cathode and anode spaces. The products were characterized by using FT-IR, NMR and Raman spectroscopy. The influence of temperature and conductive additives on product yield was also investigated. The study shows that direct electrochemical preparation of zinc complexes such as Zn(acac)(2), Zn(OEt)(2) (acac)(2) and Zn(OBu)(2)(acac)(2) has high current efficiency and electrolysis yield than that of Zn(OR)(2). Furthermore, these zinc complexes have high purity and can be directly used as sol-gel precursor for preparation of nanometer ZnO. Experimental results show that controlling temperature in the range of 50 similar to 60 degreesC, selecting R4NBr as conductive additives and preventing zinc anode from being covered by electrochemical products can improve product yield. The study also shows that nano-sized ZnO prepared by this method has monoclinic structure with a narrow size distribution of 5-10 nm

Proteomics identifies neddylation as a potential therapy target in small intestinal neuroendocrine tumors.

Patients with small intestinal neuroendocrine tumors (SI-NETs) frequently develop spread disease; however, the underlying molecular mechanisms of disease progression are not known and effective preventive treatment strategies are lacking. Here, protein expression profiling was performed by HiRIEF-LC-MS in 14 primary SI-NETs from patients with and without liver metastases detected at the time of surgery and initial treatment. Among differentially expressed proteins, overexpression of the ubiquitin-like protein NEDD8 was identified in samples from patients with liver metastasis. Further, NEDD8 correlation analysis indicated co-expression with RBX1, a key component in cullin-RING ubiquitin ligases (CRLs). In vitro inhibition of neddylation with the therapeutic agent pevonedistat (MLN4924) resulted in a dramatic decrease of proliferation in SI-NET cell lines. Subsequent mass spectrometry-based proteomics analysis of pevonedistat effects and effects of the proteasome inhibitor bortezomib revealed stabilization of multiple targets of CRLs including p27, an established tumor suppressor in SI-NET. Silencing of NEDD8 and RBX1 using siRNA resulted in a stabilization of p27, suggesting that the cellular levels of NEDD8 and RBX1 affect CRL activity. Inhibition of CRL activity, by either NEDD8/RBX1 silencing or pevonedistat treatment of cells resulted in induction of apoptosis that could be partially rescued by siRNA-based silencing of p27. Differential expression of both p27 and NEDD8 was confirmed in a second cohort of SI-NET using immunohistochemistry. Collectively, these findings suggest a role for CRLs and the ubiquitin proteasome system in suppression of p27 in SI-NET, and inhibition of neddylation as a putative therapeutic strategy in SI-NET

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges

Measurement of the matrix element for the decay η′→ηπ +π -

The Dalitz plot of η⊃′→ηπ⊃+π⊃- decay is studied using (225.2±2.8)×106 J/ψ events collected with the BESIII detector at the BEPCII e⊃+e⊃- collider. With the largest sample of η⊃′ decays to date, the parameters of the Dalitz plot are determined in a generalized and a linear representation. Also, the branching fraction of J/ψ→γη⊃′ is determined to be (4.84±0.03±0.24)×10⊃-3, where the first error is statistical and the second systematic. © 2011 American Physical Society.published_or_final_versio

First observation of the decays χcJ→π0π0π0π0

We present a study of the P-wave spin-triplet charmonium χ cJ decays (J=0, 1, 2) into π0π0π0π0. The analysis is based on 106×106 ψ⊃′ decays recorded with the BESIII detector at the BEPCII electron positron collider. The decay into the π0π0π0π0 hadronic final state is observed for the first time. We measure the branching fractions B(χ c0→π0π0π0π0)=(3.34±0. 06±0.44)×10⊃-3, B(χ c1→π0π0π0π0) =(0.57±0.03±0.08)×10⊃-3, and B(χ c2→π0π0π0π0)=(1.21±0.05±0.16) ×10⊃-3, where the uncertainties are statistical and systematical, respectively. © 2011 American Physical Society.published_or_final_versio

Study of a00(980)-f0(980) mixing

Using samples of 2.25×108 J/ψ events and 1.06×108 ψ ′ events collected with the BES III detector, we study the f 0(980)→a00(980) and a00(980)→f 0(980) transitions in the processes J/ψ→φf 0(980) →φa00(980) and χ c1→π0a00(980)→π0f 0(980), respectively. Evidence for f 0(980)→a00(980) is found with a significance of 3.4σ, while in the case of a00(980)→f 0(980) transition, the significance is 1.9σ. Measurements and upper limits of both branching ratios and mixing intensities are determined. © 2011 American Physical Society.published_or_final_versio

Observation of \chi_{cJ} decaying into the p\bar{p}K^{+}K^{-} final state

First measurements of the decays of the three $\chi_{cJ}$ states to $p\bar{p}K^{+}K^{-}$ final states are presented. Intermediate $\phi\to K^{+}K^{-}$ and $\Lambda(1520)\to pK^{-}$ resonance states are observed, and branching fractions for $\chi_{cJ}\to \bar{p}K^{+}\Lambda(1520)$, $\Lambda(1520) \bar{\Lambda}(1520)$, and $\phi p\bar{p}$ are reported. We also measure branching fractions for direct $\chi_{cJ}\to p\bar{p} K^{+}K^{-}$ decays. These are first observations of $\chi_{cJ}$ decays to unstable baryon resonances and provide useful information about the $\chi_{cJ}$ states. The experiment uses samples of $\chi_{cJ}$ mesons produced via radiative transitions from 106 million $\psi^{\prime}$ mesons collected in the BESIII detector at the BEPCII $e^+e^-$ collider.Comment: 16 pages, 5 figure

Evidence for psi' decays into gamma pi^0 and gamma eta

The decays psi'->gamma pi^0, gamma eta and gamma eta' are studied using data collected with the BESIII detector at the BEPCII e^+e^- collider. Processes psi'->gamma pi^0 and psi'->gamma eta are observed for the first time with signal significances of 4.6 sigma and 4.3 sigma, respectively. The branching fractions are determined to be: B(psi'->gamma pi^0)=(1.58+-0.40+-0.13)x10^{-6}, B(psi'->gamma eta)=(1.38+-0.48+-0.09)x10^{-6}, and B(psi'->gamma eta')=(126+-3+-8) x 10^{-6}, where the first errors are statistical and the second ones systematic.Comment: 6 pages, 4 figure