Effect of Substrate Temperature on the Structural Properties of CdxZn1-xTe Films Grown by Close-Spaced Sublimation Method

In this work by energy dispersive analysis of X-rays, scanning electron microscopy and X-ray diffraction methods films of CdxZn1-xTe solid solution, obtained by a close-spaced vacuum sublimation technique under different temperatures of glass substrate, has been studied. Films were deposited by the co sublimation of Cadmium Telluride (CdTe) and Zinc Telluride (ZnTe) chunks, mixed in the ratio of 2:1. The effect of substrate temperature on the surface morphology, elemental and phase composition, lattice parameter, scattering domain sizes has been studied. The results of these studies can be used for obtaining absorber layers of tandem solar cells, basic layers of X-ray and gamma detectors

Effect of Substrate Temperature on the Structural Properties of CdxZn1-xTe Films Grown by Close-Spaced Sublimation Method

In this work by energy dispersive analysis of X-rays, scanning electron microscopy and X-ray diffraction methods films of CdxZn1-xTe solid solution, obtained by a close-spaced vacuum sublimation technique under different temperatures of glass substrate, has been studied. Films were deposited by the co sublimation of Cadmium Telluride (CdTe) and Zinc Telluride (ZnTe) chunks, mixed in the ratio of 2:1. The effect of substrate temperature on the surface morphology, elemental and phase composition, lattice parameter, scattering domain sizes has been studied. The results of these studies can be used for obtaining absorber layers of tandem solar cells, basic layers of X-ray and gamma detectors

Structural Properties of Chemically-Deposited ZnOхS1-x Solid Solutions

In paper, by the methods of scanning electron microscopy and X-ray diffraction there are investigated the structural features of films of ZnOxS1-x solid solutions, which are deposited from solutions of zinc acetate, thiourea and ammonia. As a result, the influence of deposition time on the elemental and phase composition of thin films and their structural characteristics are studied. It is established that increasing time of deposition of the films leads to an increase of sulfur concentration in their composition from 9.86 at. % to 14.06 at. %. It is shown that all condensates have hexagonal structure with lattice constants of a = 0.32486 nm, c = 0.52086, c/a = 1.603, and growth texture of [200], the quality of which depends on the deposition time

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Polycrystalline Cd1 xZnxTe thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd1 xZnxTe films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films.This work was supported by Grant State Fund for Fundamental Research (project NGP/F61/087) and by the Ministry of Education and Science of Ukraine (Grant no. 0110U001151) by the National Academy of Sciences of Ukraine (Grants nos. BС-157-15 and B-146-15)

Composition dependence of structural and optical properties of Cd1−xZnxTe thick films obtained by the close-spaced sublimation

New approach for deposition of Cd1−xZnxTe thick films has been developed. Effect of chemical composition on Cd1−xZnxTe thick films properties was studied. The proposed approach allows obtaining of high-quality Cd1−xZnxTe thick films. Compositional dependence of Raman modes frequencies was established.This paper reports the results of structural, photoluminescence and Raman characterization of thick Cd1−xZnxTe films with different zinc concentration obtained by the close spaced vacuum sublimation method. The analysis of the X-rays patterns allows us to determine the effect of the zinc concentration on crystal quality of the films. It was found that samples with x ≈ 0.10 and x ≈ 0.32 have high crystal quality. However, with increasing of zinc concentration the crystal quality decreases. This result was confirmed by the photoluminescence study. Namely, the significant degradation of optical properties for the samples with high zinc concentration (x > 0.32) was observed. Raman spectroscopy reveals the relation between zinc concentration and vibrational properties of the films. Also, the micro-Raman method shows that obtained films are uniform and free of tellurium inclusions.This work was supported by Erasmus Ianus Programme and by the Ministry of Education, Science of Ukraine (Grant No. 0115U003242, 0113U000131) by theNational Academy of Sciences of Ukraine (Grants Nos. BС-157-15 and B-146-15) and State Fund for Fundamental Research (project N GP/F61/087)

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Polycrystalline Cd1 xZnxTe thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd1 xZnxTe films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films.This work was supported by Grant State Fund for Fundamental Research (project NGP/F61/087) and by the Ministry of Education and Science of Ukraine (Grant no. 0110U001151) by the National Academy of Sciences of Ukraine (Grants nos. BС-157-15 and B-146-15)

The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals

The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occur in the nanosecond range. The information on the nature and energy structure of the anisotropic impurity centers has been obtained. Two different photogeneration mechanisms of free electrons have been revealed: the direct photoionization of electrons from the ground impurity states and their self-ionization from the excited impurity states which are in resonance with the conduction band. It was found that the photosensitivity region for Cd₁₋ₓHgₓTe:V crystals (x = 0.018) at 300 K is in the range from 0.9 to 1.7 μm