Adatom incorporation and step crossing at the edges of 2D nanoislands

Adatom incorporation into the ``faceted'' steps bordering the 2D nanoislands is analyzed. The step permeability and incorporation coefficients are derived for some typical growth situations. It is shown that the step consisting of equivalent straight segments can be permeable even in the case of fast egde migration if there exist factors delaying creation of new kinks. The step consisting of alternating rough and straight segments may be permeable if there is no adatom transport between neighboring segments through the corner diffusion.Comment: 3 pages, one figur

Structural, magnetic and electrical properties of single crystalline La_(1-x)Sr_xMnO_3 for 0.4 < x < 0.85

We report on structural, magnetic and electrical properties of Sr-doped LaMnO_3 single crystals for doping levels 0.4 < x < 0.85. The complex structural and magnetic phase diagram can only be explained assuming significant contributions from the orbital degrees of freedom. Close to x = 0.6 a ferromagnetic metal is followed by an antiferromagnetic metallic phase below 200 K. This antiferromagnetic metallic phase exists in a monoclinic crystallographic structure. Following theoretical predictions this metallic antiferromagnet is expected to reveal an (x^2-y^2)-type orbital order. For higher Sr concentrations an antiferromagnetic insulator is established below room temperature.Comment: 8 pages, 7 figure

Studying the formation of Si (100) stepped surface in molecular-beam epitaxy

Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value

Studying the formation of Si (100) stepped surface in molecular-beam epitaxy

Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value