Thermodynamic and Tunneling Density of States of the Integer Quantum Hall Critical State

We examine the long wave length limit of the self-consistent Hartree-Fock approximation irreducible static density-density response function by evaluating the charge induced by an external charge. Our results are consistent with the compressibility sum rule and inconsistent with earlier work that did not account for consistency between the exchange-local-field and the disorder potential. We conclude that the thermodynamic density of states is finite, in spite of the vanishing tunneling density of states at the critical energy of the integer quantum Hall transition.Comment: 5 pages, 4 figures, minor revisions, published versio

Short-Range Interactions and Scaling Near Integer Quantum Hall Transitions

We study the influence of short-range electron-electron interactions on scaling behavior near the integer quantum Hall plateau transitions. Short-range interactions are known to be irrelevant at the renormalization group fixed point which represents the transition in the non-interacting system. We find, nevertheless, that transport properties change discontinuously when interactions are introduced. Most importantly, in the thermodynamic limit the conductivity at finite temperature is zero without interactions, but non-zero in the presence of arbitrarily weak interactions. In addition, scaling as a function of frequency, $\omega$, and temperature, $T$, is determined by the scaling variable $\omega/T^p$ (where $p$ is the exponent for the temperature dependence of the inelastic scattering rate) and not by $\omega/T$, as it would be at a conventional quantum phase transition described by an interacting fixed point. We express the inelastic exponent, $p$, and the thermal exponent, $z_T$, in terms of the scaling dimension, $-\alpha < 0$, of the interaction strength and the dynamical exponent $z$ (which has the value $z=2$), obtaining $p=1+2\alpha/z$ and $z_T=2/p$.Comment: 9 pages, 4 figures, submitted to Physical Review

Picosecond optospintronic tunnel junctions

Perpendicular magnetic tunnel junctions (p-MTJs), as building blocks of spintronic devices, offer substantial potential for next-generation nonvolatile memory applications. However, their performance is fundamentally hindered by a subnanosecond speed limitation, due to spin-polarized-current-based mechanisms. Here, we report an optospintronic tunnel junction (OTJ) device with a picosecond switching speed, ultralow power, high magnetoresistance ratio, high thermal stability, and nonvolatility. This device incorporates an all-optically switchable Gd/Co bilayer coupled to a CoFeB/MgO-based p-MTJ, by subtle tuning of Ruderman–Kittel–Kasuya–Yosida interaction. An all-optical “writing” of the OTJ within 10 ps is experimentally demonstrated by time-resolved measurements. The device shows a reliable resistance “readout” with a relatively high tunnel magnetoresistance of 34.7%, as well as promising scaling toward the nanoscale with ultralow power consumption (<100 fJ for a 50-nm-sized bit). Our proof-of-concept demonstration of OTJ might ultimately pave the way toward a new category of integrated spintronic–photonic memory devices

Vertical Confinement and Evolution of Reentrant Insulating Transition in the Fractional Quantum Hall Regime

We have observed an anomalous shift of the high field reentrant insulating phases in a two-dimensional electron system (2DES) tightly confined within a narrow GaAs/AlGaAs quantum well. Instead of the well-known transitions into the high field insulating states centered around $\nu = 1/5$, the 2DES confined within an 80\AA-wide quantum well exhibits the transition at $\nu = 1/3$. Comparably large quantum lifetime of the 2DES in narrow well discounts the effect of disorder and points to confinement as the primary driving force behind the evolution of the reentrant transition.Comment: 5 pages, 4 figure

EGAM Induced by Energetic-electrons and Nonlinear Interactions among EGAM, BAEs and Tearing Modes in a Toroidal Plasma

In this letter, it is reported that the first experimental results are associated with the GAM induced by energetic electrons (eEGAM) in HL-2A Ohmic plasma. The energetic-electrons are generated by parallel electric fields during magnetic reconnection associated with tearing mode (TM). The eEGAM localizes in the core plasma, i.e. in the vicinity of q=2 surface, and is very different from one excited by the drift-wave turbulence in the edge plasma. The analysis indicated that the eEGAM is provided with the magnetic components, whose intensities depend on the poloidal angles, and its mode numbers are jm/nj=2/0. Further, there exist intense nonlinear interactions among eEGAM, BAEs and strong tearing modes (TMs). These new findings shed light on the underlying physics mechanism for the excitation of the low frequency (LF) Alfv\'enic and acoustic uctuations.Comment: 5 pages,4 figure

Two-Boson Exchange Physics: A Brief Review

Current status of the two-boson exchange contributions to elastic electron-proton scattering, both for parity conserving and parity-violating, is briefly reviewed. How the discrepancy in the extraction of elastic nucleon form factors between unpolarized Rosenbluth and polarization transfer experiments can be understood, in large part, by the two-photon exchange corrections is discussed. We also illustrate how the measurement of the ratio between positron-proton and electron-proton scattering can be used to differentiate different models of two-photon exchange. For the parity-violating electron-proton scattering, the interest is on how the two-boson exchange (TBE), \gamma Z-exchange in particular, could affect the extraction of the long-sought strangeness form factors. Various calculations all indicate that the magnitudes of effect of TBE on the extraction of strangeness form factors is small, though can be large percentage-wise in certain kinematics.Comment: 6 pages, 5 figures, prepared for Proceedings of the fifth Asia-Pacific Conference on Few-Body Problems in Physics (APFB2011), Seoul, Korea, August 22-26, 2011, to appear in Few-Body Systems, November 201

Interface ferromagnetism and orbital reconstruction in BiFeO3- La0.7Sr0.3MnO3 heterostructures

We report the formation of a novel ferromagnetic state in the antiferromagnet BiFeO3 at the interface with La0.7Sr0.3MnO3. Using x-ray magnetic circular dichroism at Mn and Fe L2,3-edges, we discovered that the development of this ferromagnetic spin structure is strongly associated with the onset of a significant exchange bias. Our results demonstrate that the magnetic state is directly related with an electronic orbital reconstruction at the interface, which is supported by the linearly polarized x-ray absorption measurement at oxygen K-edge.Comment: 17 pages, 4 figures, PRL in pres

Density-functional embedding using a plane-wave basis

The constrained electron density method of embedding a Kohn-Sham system in a substrate system (first described by P. Cortona, Phys. Rev. B {\bf 44}, 8454 (1991) and T.A. Wesolowski and A. Warshel, J. Phys. Chem {\bf 97}, 8050 (1993)) is applied with a plane-wave basis and both local and non-local pseudopotentials. This method divides the electron density of the system into substrate and embedded electron densities, the sum of which is the electron density of the system of interest. Coupling between the substrate and embedded systems is achieved via approximate kinetic energy functionals. Bulk aluminium is examined as a test case for which there is a strong interaction between the substrate and embedded systems. A number of approximations to the kinetic-energy functional, both semi-local and non-local, are investigated. It is found that Kohn-Sham results can be well reproduced using a non-local kinetic energy functional, with the total energy accurate to better than 0.1 eV per atom and good agreement between the electron densities.Comment: 11 pages, 4 figure