41,652 research outputs found

    Calibration of the Pulsed Electroacoustic Technique in the Presence of Trapped Charge

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    The influence of pulse voltage on the accuracy of charge density distribution in the pulsed electroacoustic technique (PEA) is discussed. It is shown that significant error can be introduced if a low dc voltage and high pulse voltage are used to calibrate charge density. However, our main focus in the present paper is to deal with one of the practical situations where space charge exists in the material prior to any measurements. The conventional calibration method can no longer be used to calibrate charge density due to the interference by the charge on the electrode induced by space charge. A method has been proposed which is based on two measurements. Firstly, the sample containing charge is measured without any applied voltage. The second measurement is carried out with a small external applied voltage. The applied voltage should be small enough so there is no disturbance of the existing charge in the sample. The difference of the two measurements can be used for calibration. An additional advantage of the proposed method avoids the influence of the pulse voltage on calibration and therefore gives a more accurate representation of space charge. The proposed method has been validated

    The transmission or scattering of elastic waves by an inhomogeneity of simple geometry: A comparison of theories

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    The extended method of equivalent inclusion developed is applied to study the specific wave problems of the transmission of elastic waves in an infinite medium containing a layer of inhomogeneity, and of the scattering of elastic waves in an infinite medium containing a perfect spherical inhomogeneity. The eigenstrains are expanded as a geometric series and the method of integration for the inhomogeneous Helmholtz operator given by Fu and Mura is adopted. The results obtained by using a limited number of terms in the eigenstrain expansion are compared with exact solutions for the layer problem and for a perfect sphere. Two parameters are singled out for this comparison: the ratio of elastic moduli, and the ratio of the mass densities. General trends for three different situations are shown

    The effect of pre-processing and grain structure on the bio-corrosion and fatigue resistance of magnesium alloy AZ31

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    Magnesium alloys are broadly used for structural applications in the aerospace and automotive industries as well as in consumer electronics. While a high specific strength is the forte of magnesium alloys, one serious limitation for Mg alloys is their corrosion performance. Unlike aluminium, it does not form a stable passive film to provide long-term protection from further corrosion. The poor corrosion resistance of magnesium and magnesium alloys is regarded as a major drawback, and significant effort has been focused on improving this.[1-3] However, the high reactivity of magnesium alloys in corrosive media can be used to advantage in biomedical applications, particularly in temporary implants where the capacity of a material for bio-degradation is one of the most sought after properties. Indeed, permanent implant materials, such as stainless steel, titanium alloys or Nitinol (55Ni-45Ti), are the only choices currently available for hard tissue implantation. They can cause permanent physical irritation, long-term endothelial dysfunction and chronic inflammatory local reaction. Sometimes a second operation is needed for the implant to be removed. Given the ability of the human body to gradually recover and regenerate damaged tissue, the ideal solution would thus be a degradable implant, which would offer a physiologically less invasive repair and temporary support during tissue recovery. After fulfilling its function, this implant would be obliterated, being absorbed by the body. This philosophy of implant surgery would also be of particular interest for endovascular stent

    The space group classification of topological band insulators

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    Topological band insulators (TBIs) are bulk insulating materials which feature topologically protected metallic states on their boundary. The existing classification departs from time-reversal symmetry, but the role of the crystal lattice symmetries in the physics of these topological states remained elusive. Here we provide the classification of TBIs protected not only by time-reversal, but also by crystalline symmetries. We find three broad classes of topological states: (a) Gamma-states robust against general time-reversal invariant perturbations; (b) Translationally-active states protected from elastic scattering, but susceptible to topological crystalline disorder; (c) Valley topological insulators sensitive to the effects of non-topological and crystalline disorder. These three classes give rise to 18 different two-dimensional, and, at least 70 three-dimensional TBIs, opening up a route for the systematic search for new types of TBIs.Comment: Accepted in Nature Physic

    Momentum Distribution of Near-Zero-Energy Photoelectrons in the Strong-Field Tunneling Ionization in the Long Wavelength Limit

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    We investigate the ionization dynamics of Argon atoms irradiated by an ultrashort intense laser of a wavelength up to 3100 nm, addressing the momentum distribution of the photoelectrons with near-zero-energy. We find a surprising accumulation in the momentum distribution corresponding to meV energy and a \textquotedblleft V"-like structure at the slightly larger transverse momenta. Semiclassical simulations indicate the crucial role of the Coulomb attraction between the escaping electron and the remaining ion at extremely large distance. Tracing back classical trajectories, we find the tunneling electrons born in a certain window of the field phase and transverse velocity are responsible for the striking accumulation. Our theoretical results are consistent with recent meV-resolved high-precision measurements.Comment: 5 pages, 4 figure

    Surface States of the Topological Insulator Bi_{1-x}Sb_x

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    We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.Comment: 15 pages, 7 figure

    Topological meaning of Z2_2 numbers in time reversal invariant systems

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    We show that the Z2_2 invariant, which classifies the topological properties of time reversal invariant insulators, has deep relationship with the global anomaly. Although the second Chern number is the basic topological invariant characterizing time reversal systems, we show that the relative phase between the Kramers doublet reduces the topological quantum number Z to Z2_2.Comment: 4 pages, typos correcte
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