47 research outputs found

    Investigating the critical characteristics of thermal runaway process for LiFePO4/graphite batteries by a ceased segmented method

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    Lithium-ion batteries (LIBs) are widely used as the energy carrier in our daily life. However, the higher energy density of LIBs results in poor safety performance. Thermal runaway (TR) is the critical problem which hinders the further application of LIBs. Clarifying the mechanism of TR evolution is beneficial to safer cell design and safety management. In this paper, liquid nitrogen spray is proved to be an effective way to stop the violent reaction of LIBs during the TR process. Based on extended-volume accelerating rate calorimetry, the liquid nitrogen ceasing combined with non-atmospheric exposure analysis is used to investigate the TR evolution about LiFePO4/graphite batteries at critical temperature. Specifically, the geometrical shape, voltage, and impedance change are monitored during the TR process on the cell level. The morphologies/constitution of electrodes and separators are presented on the component level. Utilizing the gas analysis, the failure mechanism of the prismatic LiFePO4/graphite battery is studied comprehensively

    Optical properties of atmospheric fine particles near Beijing during the HOPE-J3A campaign

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    The optical properties and chemical composition of PM1.0 particles in a suburban environment (Huairou) near the megacity of Beijing were measured during the HOPE-J3A (Haze Observation Project Especially for Jing–Jin–Ji Area) field campaign. The campaign covered the period November 2014 to January 2015 during the winter coal heating season. The average values and standard deviations of the extinction, scattering, absorption coefficients, and the aerosol single scattering albedo (SSA) at λ = 470 nm during the measurement period were 201 ± 240, 164 ± 202, 37 ± 43 Mm−1, and 0.80 ± 0.08, respectively. The average values for the real and imaginary components of the effective complex refractive index (CRI) over the campaign were 1.40 ± 0.06 and 0.03 ± 0.02, while the average mass scattering and absorption efficiencies (MSEs and MAEs) of PM1.0 were 3.6 and 0.7 m2 g−1, respectively. Highly time-resolved air pollution episodes clearly show the dramatic evolution of the PM1.0 size distribution, extensive optical properties (extinction, scattering, and absorption coefficients), and intensive optical properties (SSA and CRI) during haze formation, development, and decline. Time periods were classified into three different pollution levels (clear, slightly polluted, and polluted) for further analysis. It was found that (1) the relative contributions of organic and inorganic species to observed aerosol composition changed significantly from clear to polluted days: the organic mass fraction decreased from 50 to 43 % while the proportion of sulfates, nitrates, and ammonium increased strongly from 34 to 44 %. (2) Chemical apportionment of extinction, calculated using the IMPROVE algorithm, tended to underestimate the extinction compared to measurements. Agreement with measurements was improved by modifying the parameters to account for enhanced absorption by elemental carbon (EC). Organic mass was the largest contributor (52 %) to the total extinction of PM1.0, while EC, despite its low mass concentration of ∼ 4 %, contributed about 17 % to extinction. When the air quality deteriorated, the contribution of nitrate aerosol increased significantly (from 15 % on clear days to 22 % on polluted days). (3) Under polluted conditions, the average MAEs of EC were up to 4 times as large as the reference MAE value for freshly generated black carbon (BC). The temporal pattern of MAE values was similar to that of the OC / EC ratio, suggesting that non-BC absorption from secondary organic aerosol also contributes to particle absorption

    Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates

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    The interactions between 1D defect threading dislocations and 2D defect antiphase boundaries and antiphase boundary annihilation in III–V materials on Si heteroepitaxy growth are revealed

    A method to prolong lithium-ion battery life during the full life cycle

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    Extended lifetime of lithium-ion batteries decreases economic costs and environmental burdens in achieving sustainable development. Cycle life tests are conducted on 18650-type commercial batteries, exhibiting nonlinear and inconsistent degradation. The accelerated fade dispersion is proposed to be triggered by the evolution of an additional potential of the anode during cycling as measured vs. Li+^+/Li. A method to prolong the battery cycle lifetime is proposed, in which the lower cutoff voltage is raised to 3 V when the battery reaches a capacity degradation threshold. The results demonstrate a 38.1% increase in throughput at 70% of their beginning of life (BoL) capacity. The method is applied to two other types of lithium-ion batteries. A cycle lifetime extension of 16.7% and 33.7% is achieved at 70% of their BoL capacity, respectively. The proposed method enables lithium-ion batteries to provide long service time, cost savings, and environmental relief while facilitating suitable second-use applications

    Data-driven capacity estimation of commercial lithium-ion batteries from voltage relaxation

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    Accurate capacity estimation is crucial for the reliable and safe operation of lithium-ion batteries. In particular, exploiting the relaxation voltage curve features could enable battery capacity estimation without additional cycling information. Here, we report the study of three datasets comprising 130 commercial lithium-ion cells cycled under various conditions to evaluate the capacity estimation approach. One dataset is collected for model building from batteries with LiNi0.86_{0.86}Co0.11_{0.11}Al0.03_{0.03}O2_{2}-based positive electrodes. The other two datasets, used for validation, are obtained from batteries with LiNi0.83_{0.83}Co0.11_{0.11}Mn0.07_{0.07}O2_{2}-based positive electrodes and batteries with the blend of Li(NiCoMn)O2_{2} - Li(NiCoAl)O2_{2} positive electrodes. Base models that use machine learning methods are employed to estimate the battery capacity using features derived from the relaxation voltage profiles. The best model achieves a root-mean-square error of 1.1% for the dataset used for the model building. A transfer learning model is then developed by adding a featured linear transformation to the base model. This extended model achieves a root-mean-square error of less than 1.7% on the datasets used for the model validation, indicating the successful applicability of the capacity estimation approach utilizing cell voltage relaxation

    The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix

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    In this work, we investigated the epitaxial growth of InAs quantum dots (QDs) on Ge substrates. By varying the growth parameters of growth temperature, deposition thickness and growth rate of InAs, a high density of 1.2 ×1011 cm-2 self-assembled InAs QDs were successfully epitaxially grown on Ge substrates by solid-source molecular beam epitaxy (MBE) and capped by Ge layers. Pyramidal- and polyhedral-shaped InAs QDs embedded in Ge matrices were revealed, which are distinct from the lens- or truncated pyramid-shape dots in InAs/GaAs or InAs/Si systems. Moreover, with 200 nm Ge capping layer, one third of the embedded QDs are found with ellipse and hexagonal nanovoids with sizes of 7 – 9 nm, which is observed for the first time for InAs QDs embedded in a Ge matrix to the best of our knowledge. These results provide a new possibility of integrating InAs QD devices on Group-IV platforms for Si photonics

    Inversion boundary annihilation in GaAs Monolithically grown on on-axis Silicon (001)

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    Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001) substrates enables a route of low‐cost and high‐density Si‐based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between III–V materials and Si, which makes it almost impossible to produce high‐quality III–V devices on Si. In this paper, a novel technique to achieve IB‐free GaAs monolithically grown on on‐axis Si (001) substrates by realizing the alternating straight and meandering single atomic steps on Si surface has been demonstrated without the use of double Si atomic steps, which was previously believed to be the key for IB‐free III–V growth on Si. The periodic straight and meandering single atomic steps on Si surface are results of high‐temperature annealing of Si buffer layer. Furthermore, an electronically pumped quantum‐dot laser has been demonstrated on this IB‐free GaAs/Si platform with a maximum operating temperature of 120 °C. These results can be a major step towards monolithic integration of III–V materials and devices with the mature CMOS technology
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