18 research outputs found

    Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

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    A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions

    Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization

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    We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics

    Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films

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    We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C. In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behaviour, while single-phase films have a low bulk-like magnetic moment. Conductive-tip atomic force microscopy mappings also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures.Comment: sumbitted to Appl. Phys. Let

    Surface study of iridium buffer layers during the diamond bias enhanced nucleation in a HFCVD reactor

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    International audienceThe BEN nucleation of diamond on iridium substrates has been studied in a hot filament reactor. Without a prior BEN stage, no diamond nucleation could be detected. Nucleation is promoted only if a BEN step is applied before the CVD growth with nucleation densities up to 5 109 cm−2. The present study focuses on the early stages of BEN to better understand its specific role. In this way, samples have been in situ characterized using electron spectroscopies (XPS, AES, ELS) and further investigated by HR-SEM, AFM, Nano-Auger and Raman spectroscopy. A very different behaviour in the interface formation has been observed, as compared to silicon. First, a substrate roughening takes place during the cleaning step. Second, the formation of a graphite layer was systematically observed, with or without the BEN stage, in the early stages of CVD synthesis. Its crystallinity has been studied from the Raman experiments. The study of the XPS Ir 4f peaks supports a weak chemical bonding between graphite and iridium. Finally, after the BEN stage, spatially resolved Nano-Auger and Raman measurements revealed the presence of diamond nanocrystals

    Mg diffusion in K(Ta0.65Nb0.35)O3 thin films grown on MgO evidenced by Auger electron spectroscopy investigation

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    International audienceThe diffusion of Mg in pulsed laser deposited K(Ta0.65Nb0.35)O3 thin films epitaxially grown on (1 0 0) MgO single crystal substrate were investigated by Auger electron spectroscopy (AES). A diffusion of Mg from the substrate into the whole thickness (400 nm) of the as-deposited K(Ta0.65Nb0.35)O3 films was observed with an accumulation of Mg at the surface. Ex situ post-annealing (750 °C/2 h) has led to a homogeneous distribution of Mg in all the ferroelectric coating. This strong reaction between film and substrate promotes a doping effect, responsible for the reduction of K(Ta0.65Nb0.35)O3 dielectric losses in comparison with films grown on other substrates

    Preferential growth of carbon nanotubes/nanofibers using lithographically patterned catalysts

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    In order to utilise the full potential of carbon nanotubes/nanofibers, it is necessary to be able to synthesize well aligned nanotubes/nanofibres at desired locations on a substrate. This paper examines the preferential growth of aligned carbon nanofibres by PECVD using lithographically patterned catalysts. In the PECVD deposition process, amorphous carbon is deposited together with the nanotubes due to the plasma decomposition of the carbon feed gas, in this case, acetylene. The challenge is to uniformly nucleate nanotudes and reduce the unwanted amorphous carbon on both the patterned and unpatterned areas. An etching gas (ammonia) is thus also incorporated into the PECVD process and by appropriately balancing the acetylene to ammonia ratio, conditions are obtained where no unwanted amorphous carbon is deposited. In this paper, we demonstrate high yield, uniform, 'clean' and preferential growth of vertically aligned nanotubes using PECVD
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