56 research outputs found

    X-RAY REFLECTIVITY OF InAs/GaAs HETEROSTRUCTURES WITH SURFACE AND INTERFACIAL ROUGHNESS

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    The reflection of monochromatic x-rays by heterostructures shows regular oscillations in the reflectivity as a function of the grazing angle. These oscillations contain information about the layer thickness and interfacial roughness. Our results indicate that an overgrowth of an InAs layer on GaAs by molecular beam epitaxy has started with a rough surface and ended with a smooth finish. We thus demonstrate a practical technique for nondestructive evaluation of the interfacial roughness in semiconductor heterostructures
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