An accurate instrument for emissivity measurements by direct and indirect methods

Emissivity is a quantity essential to consider when assessing the measurement uncertainty in non-contact temperature measurements. This paper presents a new instrument for measuring emissivity of opaque materials from 200 to 450 °C in the spectral range of 2.1 to 2.5 µm. These ranges are ideal for measuring the temperature of metals, such as aluminium, during manufacture or heat-treating process. The instrument consists of a pair of hemispherical cups coated with Vantablack® and gold respectively, a custom designed radiation thermometer, and a hot plate. This instrument enables both the direct and the indirect methods for measuring emissivity of materials. Use of two identical cups allowed for quantitative analysis of the uncertainty of the instrument to determine the most suitable emissivity measurement range. The expanded uncertainty of the instrument was lower than 0.058 (k = 2) over the entire measuring temperature range. Studies were undertaken using different materials with emissivities ranging from 0.06 to 1. These included: aluminium alloy 6082, stainless steel 304, and HiE-Coat 840M paint. Relative uncertainty analysis indicated that the indirect method was more accurate for measuring low emissivity materials, whereas the direct method was more suitable for all other materials. Our instrument, with experimentally determined measurement uncertainty, aims to offer accurate emissivity references for use in radiation thermometry applications

InGaAs APD thermometry

The infrared detector is the most important component within any radiation thermometry based system, with its choice determining the wavelength, response time and, ultimately, the temperature measurement capabilities of the instrument. To improve upon the existing generation of radiation thermometers, more sensitive detector technologies are required. In this work, we demonstrate a direct comparison between an indium gallium arsenide (InGaAs) photodiode and an InGaAs avalanche photodiode (APD) for 1.6 μm radiation thermometry. The high internal gain of the InGaAs APD increases the sensitivity of the radiation thermometer, enabling the measurement of a target temperature more than 50 ºC lower than is typical with commercially available InGaAs photodiode thermometers. The more sensitive InGaAs APD provides faster response time measurements, hence improving the thermometer's temporal resolution. Finally, the InGaAs APD is shown to produce a quantitative thermal image with lower measured temperature fluctuation across the scene when incorporated within a highly aperture limited scanning system

InAs Photodiodes for 3.43 mu(text)m Radiation Thermometry

We report an evaluation of an epitaxially grown uncooled InAs photodiode for the use in radiation thermometry. Radiation thermometry measurements was taken using the photodiode covered blackbody temperatures of 50 °C-300 °C. By determining the photocurrent and signal-to-noise ratio, the temperature error of the measurements was deduced. It was found that an uncooled InAs photodiode, with the peak and cutoff wavelengths of 3.35 and 3.55 μm, respectively, measured a temperature of 50 °C, with an error of 0.17 °C. Many plastics have C -H molecular bond absorptions at 3.43 μm and hence radiate thermally at this wavelength. Our results suggest that InAs photodiodes are well suited to measure the temperature of plastics above 50 °C. When tested with a narrow bandpass filter at 3.43 μm and blackbody temperatures from 50 °C-300 °C, the InAs photodiode was also found to produce a higher output photocurrent, compared with a commercial PbSe detectors

An InGaAlAs-InGaAs two-color photodetector for ratio thermometry

We report the evaluation of a molecular-beam epitaxy grown two-color photodetector for radiation thermometry. This two-color photodetector consists of two p+in+ diodes, an In0.53Ga0.25Al0.22As (hereafter InGaAlAs) p+in+ diode, which has a cutoff wavelength of 1180 nm, and an In0.53Ga0.47As (hereafter InGaAs) p+in+ diode with a cutoff wavelength of 1700 nm. Our simple monolithic integrated two-color photodetector achieved comparable output signal and signal-to-noise (SNR) ratio to that of a commercial two-color Si-InGaAs photodetector. The InGaAlAs and InGaAs diodes detect blackbody temperature as low as 275°C and 125°C, respectively, with an SNR above 10. The temperature errors extracted from our data are 4°C at 275°C for the InGaAlAs diode and 2.3°C at 125°C for the InGaAs diode. As a ratio thermometer, our two-color photodetector achieves a temperature error of 12.8°C at 275°C, but this improves with temperature to 0.1°C at 450°C. These results demonstrated the potential of InGaAlAs-InGaAs two-color photodetector for the development of high performance two-color array detectors for radiation thermometry and thermal imaging of hot objects

Hyperspectral imaging in environmental monitoring : a review of recent developments and technological advances in compact field deployable systems

The development and uptake of field deployable hyperspectral imaging systems within environmental monitoring represents an exciting and innovative development that could revolutionize a number of sensing applications in the coming decades. In this article we focus on the successful miniaturization and improved portability of hyperspectral sensors, covering their application both from aerial and ground-based platforms in a number of environmental application areas, highlighting in particular the recent implementation of low-cost consumer technology in this context. At present, these devices largely complement existing monitoring approaches, however, as technology continues to improve, these units are moving towards reaching a standard suitable for stand-alone monitoring in the not too distant future. As these low-cost and light-weight devices are already producing scientific grade results, they now have the potential to significantly improve accessibility to hyperspectral monitoring technology, as well as vastly proliferating acquisition of such datasets

Ultraviolet Imaging with Low Cost Smartphone Sensors: Development and Application of a Raspberry Pi-Based UV Camera

Here, we report, for what we believe to be the first time, on the modification of a low cost sensor, designed for the smartphone camera market, to develop an ultraviolet (UV) camera system. This was achieved via adaptation of Raspberry Pi cameras, which are based on back-illuminated complementary metal-oxide semiconductor (CMOS) sensors, and we demonstrated the utility of these devices for applications at wavelengths as low as 310 nm, by remotely sensing power station smokestack emissions in this spectral region. Given the very low cost of these units, ≈ USD 25, they are suitable for widespread proliferation in a variety of UV imaging applications, e.g., in atmospheric science, volcanology, forensics and surface smoothness measurements

Smartphone Spectrometers

Smartphones are playing an increasing role in the sciences, owing to the ubiquitous proliferation of these devices, their relatively low cost, increasing processing power and their suitability for integrated data acquisition and processing in a 'lab in a phone' capacity. There is furthermore the potential to deploy these units as nodes within Internet of Things architectures, enabling massive networked data capture. Hitherto, considerable attention has been focused on imaging applications of these devices. However, within just the last few years, another possibility has emerged: to use smartphones as a means of capturing spectra, mostly by coupling various classes of fore-optics to these units with data capture achieved using the smartphone camera. These highly novel approaches have the potential to become widely adopted across a broad range of scientific e.g., biomedical, chemical and agricultural application areas. In this review, we detail the exciting recent development of smartphone spectrometer hardware, in addition to covering applications to which these units have been deployed, hitherto. The paper also points forward to the potentially highly influential impacts that such units could have on the sciences in the coming decades

Low-cost hyperspectral imaging system: Design and testing for laboratory-based environmental applications

The recent surge in the development of low-cost, miniaturised technologies provides a significant opportunity to develop miniaturised hyperspectral imagers at a fraction of the cost of currently available commercial set-ups. This article introduces a low-cost laboratory-based hyperspectral imager developed using commercially available components. The imager is capable of quantitative and qualitative hyperspectral measurements, and it was tested in a variety of laboratory-based environmental applications where it demonstrated its ability to collect data that correlates well with existing datasets. In its current format, the imager is an accurate laboratory measurement tool, with significant potential for ongoing future developments. It represents an initial development in accessible hyperspectral technologies, providing a robust basis for future improvements

Thermal imaging metrology using high dynamic range near-infrared photovoltaic-mode camera

The measurement of a wide temperature range in a scene requires hardware capable of high dynamic range imaging. We describe a novel near-infrared thermal imaging system operating at a wavelength of 940 nm based on a commercial photovoltaic mode high dynamic range camera and analyse its measurement uncertainty. The system is capable of measuring over an unprecedently wide temperature range; however, this comes at the cost of a reduced temperature resolution and increased uncertainty compared to a conventional CMOS camera operating in photodetective mode. Despite this, the photovoltaic mode thermal camera has an acceptable level of uncertainty for most thermal imaging applications with an NETD of 4–12 °C and a combined measurement uncertainty of approximately 1% K if a low pixel clock is used. We discuss the various sources of uncertainty and how they might be minimised to further improve the performance of the thermal camera. The thermal camera is a good choice for imaging low frame rate applications that have a wide inter-scene temperature range

Ultraviolet imaging of volcanic plumes: A new paradigm in volcanology

Ultraviolet imaging has been applied in volcanology over the last ten years or so. This provides considerably higher temporal and spatial resolution volcanic gas emission rate data than available previously, enabling the volcanology community to investigate a range of far faster plume degassing processes than achievable hitherto. To date, this has covered rapid oscillations in passive degassing through conduits and lava lakes, as well as puffing and explosions, facilitating exciting connections to be made for the first time between previously rather separate sub-disciplines of volcanology. Firstly, there has been corroboration between geophysical and degassing datasets at ≈1 Hz, expediting more holistic investigations of volcanic source-process behaviour. Secondly, there has been the combination of surface observations of gas release with fluid dynamic models (numerical, mathematical, and laboratory) for gas flow in conduits, in attempts to link subterranean driving flow processes to surface activity types. There has also been considerable research and development concerning the technique itself, covering error analysis and most recently the adaptation of smartphone sensors for this application, to deliver gas fluxes at a significantly lower instrumental price point than possible previously. At this decadal juncture in the application of UV imaging in volcanology, this article provides an overview of what has been achieved to date as well as a forward look to possible future research directions