Low-temperature saw damage gettering to improve minority carrier lifetime in multicrystalline silicon

The minority carrier lifetime in multicrystalline silicon − a material used in the majority of today's manufactured solar cells − is limited by defects within the material, including metallic impurities which are relatively mobile at low temperatures (≤700 °C). Addition of an optimised thermal process which can facilitate impurity diffusion to the saw damage at the wafer surfaces can result in permanent removal of the impurities when the saw damage is etched away. We demonstrate that this saw damage gettering is effective at 500 to 700 °C and, when combined with subsequent low-temperature processing, lifetimes are improved by a factor of more than four relative to the as-grown state. The simple method has the potential to be a low thermal budget process for the improvement of low-lifetime “red zone” wafers

Minority carrier lifetime in silicon photovoltaics : the effect of oxygen precipitation

Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and cell processing, and nucleation sites are typically vacancy-rich regions. Oxygen precipitation gives rise to recombination centres, which can reduce cell efficiencies by as much as 4% (absolute). We have studied the recombination behaviour in p-type and n-type monocrystalline silicon with a range of doping levels intentionally processed to contain oxide precipitates with a range of densities, sizes and morphologies. We analyse injection-dependent minority carrier lifetime measurements to give a full parameterisation of the recombination activity in terms of Shockley–Read–Hall statistics. We intentionally contaminate specimens with iron, and show recombination activity arises from iron segregated to oxide precipitates and surrounding defects. We find that phosphorus diffusion gettering reduces the recombination activity of the precipitates to some extent. We also find that bulk iron is preferentially gettered to the phosphorus diffused layer rather than to oxide precipitates

Titanium dioxide engineered for near-dispersionless high terahertz permittivity and ultra-low-loss

Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2-0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band