Rapidly Growing Bilateral Pseudoangiomatous Stromal Hyperplasia of the Breast

A tumoral pseudoangiomatous stromal hyperplasia (PASH) that causes huge breast enlargement is very rare. Only two cases of huge tumoral PASHs have been reported in the English medical literature. We report here on a surgically confirmed case of bilateral huge tumoral PASH in a 47-year-old woman, and we present the imaging and histopathology findings. We also review the relevant medical literature

Association of Angiotensin-Converting Enzyme and Angiotensinogen Gene Polymorphisms with Preeclampsia

We tested the hypothesis that angiotensin-converting enzyme (ACE) and angiotensinogen gene polymorphism influence the incidence, development and outcome of preeclampsia. Subjects were recruited from 90 Korean patients with preeclampsia during pregnancy and 98 age-matched controls. After isolation of DNA, polymerase chain reactions (PCR) were carried out to detect polymorphism of the ACE and angiotensinogen. M235T and T174M genotypes of angiotensinogen were determined by digestion with restriction enzyme endonuclease Tth 111-I and NCo I, respectively. The frequency of DD genotype was significantly greater in preeclampsia (0.36) than in controls (0.14) (p<0.05). The frequency of D allele was 0.55 in preeclampsia and 0.40 in controls (p<0.05). There were no differences in the onset of preeclampsia and pregnancy outcomes according to the ACE genotypes. There was no difference in the frequency of a allele of angiotensinogen M235T between the groups (0.79:0.78 in preeclampsia : controls). The frequency of T allele of angiotensinogen T174M gene was slightly increased, but not significantly, in preeclampsia (0.11) than in controls (0.07). In a multivariate analysis, only ACE genotype was associated with the development of preeclampsia (β=0.27, p=0.05). In conclusion, a molecular variant of ACE, but not angiotensinogen, gene is associated with preeclampsia in Korean women

Self-catalytic growth of elementary semiconductor nanowires with controlled morphology and crystallographic orientation

While the orientation-dependent properties of semiconductor nanowires have been theoretically predicted, their study has long been overlooked in many fields owing to the limits to controlling the crystallographic growth direction of nanowires (NWs). We present here the orientation-controlled growth of single-crystalline germanium (Ge) NWs using a self-catalytic low-pressure chemical vapor deposition process. By adjusting the growth temperature, the orientation of growth direction in GeNWs was selectively controlled to the ⟨110⟩, ⟨112⟩, or ⟨111⟩ directions on the same substrate. The NWs with different growth directions exhibit distinct morphological features, allowing control of the NW morphology from uniform NWs to nanoribbon structures. Significantly, the VLS-based self-catalytic growth of the ⟨111⟩ oriented GeNW suggests that NW growth is possible for single elementary materials even without an appropriate external catalyst. Furthermore, these findings could provide opportunities to investigate the orientation-dependent properties of semiconductor NWs

The role of government in economic development

노트 : Presented at the Korea Development institute, International Forum on Trade and Development policies, Seoul, Korea, June 11-20, 1985. 행사명 : International Forum on Trade and Development policie

Strategies for economic development in Korea

노트 : Presented at the Seminar on Industrial Development Strategies in Korea, Seoul, Korea, April 4-14, 1987. 행사명 : Industrial Development Strategies in Kore

Korea's economic management for structural adjustment in the 1980s

노트 : Presented at the Korea Development Institute, International Forum on Structural Change and Trade Policies, Seoul, Korea, May 12-21, 1987 행사명 : International Forum on Structural Change and Trade Policie