182 research outputs found
Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices
We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs
superlattices grown by low-temperature molecular beam epitaxy, which is due to
thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced
increase of the Curie temperature is strongly correlated to the In
concentration in the embedded layers. Curie temperatures up to 110 K are
observed in such structures compared to 60 K in GaMnAs single layers grown
under the same conditions. A further increase in T up to 130 K can be
achieved using post-growth annealing at temperatures near the growth
temperature. Pronounced thickness fringes in the high resolution X-ray
diffraction spectra indicate good crystalline quality and sharp interfaces in
the structures.Comment: 4 pages, 4 figures, submitted to Appl. Phys. Let
Electronic and magnetic properties of GaMnAs: Annealing effects
The effect of short-time and long-time annealing at 250C on the conductivity,
hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs
heterostructures is studied by in-situ conductivity measurements as well as
Raman and SQUID measurements before and after annealing. Whereas the
conductivity monotonously increases with increasing annealing time, the hole
density and the Curie temperature show a saturation after annealing for 30
minutes. The incorporation of thin InGaMnAs layers drastically enhances the
Curie temperature of the GaMnAs layers.Comment: 4 pages, 6 figures, submitted to Physica
Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As
The effect of annealing at 250 C on the carrier depth profile, Mn
distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As
layers with thicknesses > 200 nm, grown by molecular-beam epitaxy at low
temperatures, is studied by a variety of analytical methods. The vertical
gradient in hole concentration, revealed by electrochemical capacitance-voltage
profiling, is shown to play a key role in the understanding of conductivity and
magnetization data. The gradient, basically already present in as-grown
samples, is strongly influenced by post-growth annealing. From secondary ion
mass spectroscopy it can be concluded that, at least in thick layers, the
change in carrier depth profile and thus in conductivity is not primarily due
to out-diffusion of Mn interstitials during annealing. Two alternative possible
models are discussed.Comment: 8 pages, 8 figures, to appear in Phys. Rev.
Novel Approaches towards Highly Selective Self-Powered Gas Sensors
The prevailing design approaches of semiconductor gas sensors struggle to overcome most of their current limitations such as poor selectivity, and high power consumption. Herein, a new sensing concept based on devices that are capable of detecting gases without the need of any external power sources required to activate interaction of gases with sensor or to generate the sensor read out signal. Based on the integration of complementary functionalities (namely; powering and sensing) in a singular nanostructure, self-sustained gas sensors will be demonstrated. Moreover, a rational methodology to design organic surface functionalization that provide high selectivity towards single gas species will also be discussed. Specifically, theoretical results, confirmed experimentally, indicate that precisely tuning of the sterical and electronic structure of sensor material/organic interfaces can lead to unprecedented selectivity values, comparable to those typical of bioselective processes. Finally, an integrated gas sensor that combine both the self-powering and selective detection strategies in one single device will also be presented. © 2015 Published by Elsevier Ltd.Peer ReviewedPostprint (published version
The band structure of BeTe - a combined experimental and theoretical study
Using angle-resolved synchrotron-radiation photoemission spectroscopy we have
determined the dispersion of the valence bands of BeTe(100) along ,
i.e. the [100] direction. The measurements are analyzed with the aid of a
first-principles calculation of the BeTe bulk band structure as well as of the
photoemission peaks as given by the momentum conserving bulk transitions.
Taking the calculated unoccupied bands as final states of the photoemission
process, we obtain an excellent agreement between experimental and calculated
spectra and a clear interpretation of almost all measured bands. In contrast,
the free electron approximation for the final states fails to describe the BeTe
bulk band structure along properly.Comment: 21 pages plus 4 figure
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