We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs
superlattices grown by low-temperature molecular beam epitaxy, which is due to
thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced
increase of the Curie temperature is strongly correlated to the In
concentration in the embedded layers. Curie temperatures up to 110 K are
observed in such structures compared to 60 K in GaMnAs single layers grown
under the same conditions. A further increase in TC​ up to 130 K can be
achieved using post-growth annealing at temperatures near the growth
temperature. Pronounced thickness fringes in the high resolution X-ray
diffraction spectra indicate good crystalline quality and sharp interfaces in
the structures.Comment: 4 pages, 4 figures, submitted to Appl. Phys. Let