Thermionic charge transport in CMOS nano-transistors

We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature

Low-loss, compact, spot-size-converter based vertical couplers for photonic integrated circuits

Funding: (i) European Union Horizon H2020 Programme (H2020-ICT27-2015, COSMICC No. 688516). (ii) European Union Research Council (ERC) starting grant 337508.In recent years, the monolithic integration of new materials such as SiN, Ge and LiNbO3 on silicon (Si) has become important to the Si photonics community due to the possibility of combining the advantages of both material systems. However, efficient coupling between the two different layers is challenging. In this work, we present a spot size converter based on a two-tier taper structure to couple the optical mode adiabatically between Si and SiN. The fabricated devices show a coupling loss as low as 0.058 dB  ±  0.01 dB per transition at 1525 nm. The low coupling loss between the Si to SiN, and vice versa, reveals that this interlayer transition occurs adiabatically for short taper lengths (<200 µm). The high refractive index contrast between the Si and SiN is overcome by matching the optical impedance. The proposed two-tier taper structure provides a new platform for optoelectronic integration and a route towards 3D photonic integrated circuits.PostprintPeer reviewe

Effect of sterilization on osteoinduction. Comparison of five methods in demineralized rat bone.

The aim of this study was to find a safe, effective sterilization method that does not destroy the bone-inductive capacity of demineralized bone implants. Five sterilizing agents were tested in rats. Implants procured and processed under sterile conditions served as controls. New bone formation was evaluated by determining dry weight, calcium content, and Sr-85 incorporation of the induced ossicles. Glutaraldehyde solution, formaldehyde gas, and ethylene oxide destroyed almost all the bone-inductive capacity. Irradiation by 2.5 Mrads Co-60 resulted in a loss of about half of the inductive capacity. Merthiolate (0.18 per cent) was the only sterilizing agent that did not reduce the bone-inductive capacity of the demineralized implants. Because merthiolate is not sporicidal, gamma irradiation appears to be the most appropriate sterilizing agent for demineralized bone in clinical use