The effect of deuteration on organic magnetoresistance

NOTICE: this is the author’s version of a work that was accepted for publication in Synthetic Metals. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in SYNTHETIC METALS, 161, 7-8, (2011) DOI 10.1016/j.synthmet.2010.11.04

Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complex

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Electroluminescence of organolanthanide based organic light emitting diodes

Recent advances in organolanthanide based organic light emitting diodes have lead to the demonstration of infra-red emitting devices. A silicon based organic light emitting diode exhibiting 1.53 µm electroluminescence at room temperature has also recently been reported. Furthermore, recent work has led to a clearer understanding of the quenching mechanisms in these organolanthanide based devices and suggests that the efficiencies obtained to date can be greatly improved

Infra-red organic light emitting devices

We have demonstrated that it is possible to produce organic light emitting diodes (OLEDs) containing lanthanide ions which provide sharp electroluminescence emission at a range of wavelengths in the near infrared including 0.9µm, 0.98µm, 1.064µm, 1.3µm and 1.5µm. For devices grown on IT0 substrates we have demonstrated bright electroluminescence at drive voltages of ~12V. We have shown that these diodes can be integrated onto silicon substrates and use the silicon as the anode of the device. For erbium based devices on silicon which emit at a wavelength of 1.5µm we have demonstrated devices with room temperature internal efficiencies of approximately 0.01% at a drive voltage of 33V

Time-resolved photoluminescence excitation characterisation of lanthanide and group III tris-(8-hydroxyquinoline) molecules

Time resolved photoluminescence measurements of a range of lanthanide and group III tris(8-hydroxyquinoline) molecules have been performed as a function of both laser excitation wavelength and temperature. The role of the lanthanide ion on the ligand luminescence will be discussed and compared to that from the group III hydroxyquinoline salts. Measurements of the lifetimes of both the ligand luminescence and the lanthanide emission for all the materials will be presented

Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wells

We have investigated the effect of intermixing on the excitonic reflectivity spectra of a 100 Å thick InGaAs/GaAs quantum well (QW). We could resolve both the El - Hl and E2 - H2 excitonic features, up to LD = 80 Å. We show that both energy shifts agree well with a simple mode1 which assumes a Fick's law diffision, with a diffusion coefficient that is independent of the concentration of the cationic species. Next, considering the change (improvement) in signal to : noise ratio versus thermal annealing, we suggest that, in our samples, we not only get a broadening of the quantum well as the diffision proceeds but, also, a diffision of the lattice constituents in the plane of the well. This in-plane diffision smoothes the interfaces and reduces the monolayer well width fluctuations