Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures

Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 85, 790 (1999) and may be found at

STRAIN AND INTERDIFFUSION IN SEMICONDUCTOR HETEROSTRUCTURES

Copyright 1994 by the American Physical Society. Article is available at

Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination

Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 88, 781 (2000) and may be found at

1.54 mu m electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes

Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 75, 1380 (1999) and may be found at

Comment on `Replica analysis of the p-spin interaction Ising spin-glass model'

We demonstrate that the analytic calculation of the 1RSB break point parameter in a paper by de Oliveira and Fontanari[1] is erroneous, due to the omission of a higher order term in a lengthy perturbative calculation, and provide a refinement of the accompanying numerical results. [1] V. M. de Oliveira and J. F. Fontanari, J. Phys. A 32, 2285 (1998)Comment: 4 pages, AMS LaTeX, 1 EPS figure; minor typo correcte

Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 mu m emitters

Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 74, 798 (1999) and may be found at

Interdiffusion in InGaAs/GaAs: The effect of growth conditions

Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 84, 232 (1998) and may be found at

Magnetoresistance in organic light-emitting diode structures under illumination

Copyright 2007 by the American Physical Society. Article is available at

Characterization of interdiffusion around miscibility gap of lattice matched InGaAs/InP quantum wells by high resolution x-ray diffraction

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 101, 013502 (2007) and may be found at