Infra-red organic light emitting devices

Abstract

We have demonstrated that it is possible to produce organic light emitting diodes (OLEDs) containing lanthanide ions which provide sharp electroluminescence emission at a range of wavelengths in the near infrared including 0.9µm, 0.98µm, 1.064µm, 1.3µm and 1.5µm. For devices grown on IT0 substrates we have demonstrated bright electroluminescence at drive voltages of ~12V. We have shown that these diodes can be integrated onto silicon substrates and use the silicon as the anode of the device. For erbium based devices on silicon which emit at a wavelength of 1.5µm we have demonstrated devices with room temperature internal efficiencies of approximately 0.01% at a drive voltage of 33V