Recent Cases

This is a summary of the case law from 1965

Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignment with ΔEV = 2.05 eV, ΔEC = 0.29 eV, and an interface dipole of δ = −0.55 [email protected]

Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface

International audienceElectron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors

The Fermi energy in oxides: assessing and understanding the limits using XPS

The Fermi energy in semiconductors can often be freely controlled across the whole energy gap by doping. This is not the case in oxides, where different mechanisms exist, which can limit the range of the Fermi energy. These limits can be caused by i) dopants having deep rather than shallow charge transition levels, ii) self-com­pen­sation where the Fermi energy dependence of the defect formation energy leads to spontaneous formation of compensating defects, iii) the change of the oxidation state of either the cations or the oxygen. The latter is particularly relevant for compounds with transition metal or rare earth cations and has been recently demonstrated to explain the low water splitting efficiency of hematite [1]. Please click Additional Files below to see the full abstract

Covering convex bodies by cylinders and lattice points by flats

In connection with an unsolved problem of Bang (1951) we give a lower bound for the sum of the base volumes of cylinders covering a d-dimensional convex body in terms of the relevant basic measures of the given convex body. As an application we establish lower bounds on the number of k-dimensional flats (i.e. translates of k-dimensional linear subspaces) needed to cover all the integer points of a given convex body in d-dimensional Euclidean space for 0<k<d

Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temperature, which reveals that these layers still contain a large defect concentration. The current–voltage characteristic of indium selenide thin film devices was measured under simulated AM2 conditions. The solar conversion efficiency of these devices is lower than 0.6%. The high concentration of defects reduces the diffusion length of minority carriers down to values round to 0.2 μ[email protected] ; [email protected]

Electron transfer kinetics on natural crystals of MoS2 and graphite

Here, we evaluate the electrochemical performance of sparsely studied natural crystals of molybdenite and graphite, which have increasingly been used for fabrication of next generation monolayer molybdenum disulphide and graphene energy storage devices. Heterogeneous electron transfer kinetics of several redox mediators, including Fe(CN)63−/4−, Ru(NH3)63+/2+ and IrCl62−/3− are determined using voltammetry in a micro-droplet cell. The kinetics on both materials are studied as a function of surface defectiveness, surface ageing, applied potential and illumination. We find that the basal planes of both natural MoS2 and graphite show significant electroactivity, but a large decrease in electron transfer kinetics is observed on atmosphere-aged surfaces in comparison to in situ freshly cleaved surfaces of both materials. This is attributed to surface oxidation and adsorption of airborne contaminants at the surface exposed to an ambient environment. In contrast to semimetallic graphite, the electrode kinetics on semiconducting MoS2 are strongly dependent on the surface illumination and applied potential. Furthermore, while visibly present defects/cracks do not significantly affect the response of graphite, the kinetics on MoS2 systematically accelerate with small increase in disorder. These findings have direct implications for use of MoS2 and graphene/graphite as electrode materials in electrochemistry-related applications