Ferroelectric and magnetic properties of Pb(Fe2/3W1/3)O3-based multiferroic compounds with cation order

BiFeO3 and PbTiO3 were introduced to a Sc-modified Pb(Fe2/3W1/3)O3 compound with strong cation order to improve the multiferroic properties. It is found that the degree of cation order decreases as the amount of BiFeO3 or PbTiO3 increases. As a result, the saturation magnetization deteriorates. Solid solutions with BiFeO3 show an increase in both ferroelectric and magnetic transition temperatures. However, the ferroelectric remanent polarization is dramatically suppressed. In contrast, solid solution with PbTiO3 leads to an increase in the ferroelectric transition temperature, a decrease in the magnetic transition temperature, and a significant enhancement of remanent polarization. The composition 0.93[0.79Pb(Fe2/3W1/3)O3–0.21Pb(Sc2/3W1/3)O3]–0.07PbTiO3 shows the optimized properties of Tmax of 208K, Pr of 3.6μC/cm2 between 120 and 210K, TN of 209K, and Ms of 0.23μB/f.u. (3.7emu/g) at 10K under 5T

Surface-driven electronic structure in LaFeAsO studied by angle resolved photoemission spectroscopy

We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle resolved photoemission spectroscopy (ARPES). By comparing with a full-potential Linear Augmented PlaneWave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong polarization dependence of the band structure and a temperature-dependent hole-like band around the M point. The two phenomena give additional evidences for the existence of the surface-driven electronic structure.Comment: 6 pages, 6 figure

Straight-Pore Microfilter with Efficient Regeneration

A novel, high-efficiency gas particulate filter has precise particle size screening, low pressure drop, and a simple and fast regeneration process. The regeneration process, which requires minimal material and energy consumption, can be completely automated, and the filtration performance can be restored within a very short period of time. This filter is of a novel material composite that contains the support structure and a novel coating

Magnetism dependent phonon anomaly in LaFeAsO observed via inelastic x-ray scattering

The phonon dispersion was measured at room temperature along (0,0,L) in the tetragonal phase of LaFeAsO using inelastic x-ray scattering. Spin-polarized first-principles calculations imposing various types of antiferromagnetic order are in better agreement with the experimental results than nonmagnetic calculations, although the measurements were made well above the magnetic ordering temperature, T_N. Splitting observed between two A_{1g} phonon modes at 22 and 26 meV is only observed in spin-polarized calculations. Magneto-structural effects similar to those observed in the AFe_2As_2 materials are confirmed present in LaFeAsO. The presence of Fe-spin is necessary to find reasonable agreement of the calculations with the measured spectrum well above T_N. On-site Fe and As force constants show significant softening compared to nonmagnetic calculations, however an investigation of the real-space force constants associates the magnetoelastic coupling with a complex renormalization instead of softening of a specific pairwise force.Comment: 7 pages, 4 figure

Magnetic and structural transitions in La0.4_{0.4}Na0.6_{0.6}Fe2_2As2_2 single crystals

La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals have been grown out of an NaAs flux in an alumina crucible and characterized by measuring magnetic susceptibility, electrical resistivity, specific heat, as well as single crystal x-ray and neutron diffraction. La$_{0.4}$Na$_{0.6}$Fe$_2$As$_2$ single crystals show a structural phase transition from a high temperature tetragonal phase to a low-temperature orthorhombic phase at T$_s$\,=\,125\,K. This structural transition is accompanied by an anomaly in the temperature dependence of electrical resistivity, anisotropic magnetic susceptibility, and specific heat. Concomitant with the structural phase transition, the Fe moments order along the \emph{a} direction with an ordered moment of 0.7(1)\,$\mu_{\textup{B}}$ at \emph{T}\,=\,5 K. The low temperature stripe antiferromagnetic structure is the same as that in other \emph{A}Fe$_{2}$As$_{2}$ (\emph{A}\,=\,Ca, Sr, Ba) compounds. La$_{0.5-x}$Na$_{0.5+x}$Fe$_2$As$_2$ provides a new material platform for the study of iron-based superconductors where the electron-hole asymmetry could be studied by simply varying La/Na ratio.Comment: 9 pages, 7 figures, to appear in Physical Review

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.Comment: This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-