506 research outputs found
Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey
We have investigated the transport and magnetization characteristics of
Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion
implantation followed by pulsed-laser melting, we vary the Te compensation and
drive the system through a metal-insulator transition (MIT). This MIT is
associated with enhanced low-temperature magnetization and an evolution from
concave to convex temperature-dependent magnetization.Comment: 2 pages, 2 figures. To appear in the proceedings of the 27th
International Conference on the Physics of Semiconductors (ICPS-27,
Flagstaff, AZ, July 26-30, 2004
Carrier dynamics and coherent acoustic phonons in nitride heterostructures
We model generation and propagation of coherent acoustic phonons in
piezoelectric InGaN/GaN multi-quantum wells embedded in a \textit{pin} diode
structure and compute the time resolved reflectivity signal in simulated
pump-probe experiments. Carriers are created in the InGaN wells by ultrafast
pumping below the GaN band gap and the dynamics of the photoexcited carriers is
treated in a Boltzmann equation framework. Coherent acoustic phonons are
generated in the quantum well via both deformation potential electron-phonon
and piezoelectric electron-phonon interaction with photogenerated carriers,
with the latter mechanism being the dominant one. Coherent longitudinal
acoustic phonons propagate into the structure at the sound speed modifying the
optical properties and giving rise to a giant oscillatory differential
reflectivity signal. We demonstrate that coherent optical control of the
differential reflectivity can be achieved using a delayed control pulse.Comment: 14 pages, 11 figure
Formation of diluted IIIâV nitride thin films by N ion implantation
iluted IIIâNââVâËâ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1âyAs. In all three cases the fundamental band-gap energy for the ion beam synthesized IIIâNââVâËâ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNâAs1âx and InNâPâËâalloys. In GaNâAsâËâ the highest value of x (fraction of âactiveâ substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850â°C. The highest value of x achieved in InNâPâËâ was higher, 0.012, and the NP was found to be stable to at least 850â°C. In addition, the N activation efficiency in implantedInNâPâËâ was at least a factor of 2 higher than that in GaNâAsâËâ under similar processing conditions. AlyGa1âyNâAsâËâ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1âyNâAsâËâalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.This work was supported by the ââPhotovoltaic Materials
Focus Areaââ in the DOE Center of Excellence for the Synthesis
and Processing of Advanced Materials, Office of Science,
Office of Basic Energy Sciences, Division of Materials
Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported
by Midwest Research Institute under subcontractor
No. AAD-9-18668-7 from NREL
Bistable Amphoteric Native Defect Model of Perovskite Photovoltaics
The past few years have witnessed unprecedented rapid improvement of the
performance of a new class of photovoltaics based on halide perovskites. This
progress has been achieved even though there is no generally accepted mechanism
of the operation of these solar cells. Here we present a model based on
bistable amphoteric native defects that accounts for all key characteristics of
these photovoltaics and explains many idiosyncratic properties of halide
perovskites. We show that a transformation between donor-like and acceptor-like
configurations leads to a resonant interaction between amphoteric defects and
free charge carriers. This interaction, combined with the charge transfer from
the perovskite to the electron and hole transporting layers results in the
formation of a dynamic n-i-p junction whose photovoltaic parameters are
determined by the perovskite absorber. The model provides a unified explanation
for the outstanding properties of the perovskite photovoltaics, including
hysteresis of J-V characteristics and ultraviolet light-induced degradation.Comment: 21 pages, 7 figure
Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
The energy position of the optical absorption edge and the free carrier
populations in InxGa1-xN ternary alloys can be controlled using high energy
4He+ irradiation. The blue shift of the absorption edge after irradiation in
In-rich material (x > 0.34) is attributed to the band-filling effect
(Burstein-Moss shift) due to the native donors introduced by the irradiation.
In Ga-rich material, optical absorption measurements show that the
irradiation-introduced native defects are inside the bandgap, where they are
incorporated as acceptors. The observed irradiation-produced changes in the
optical absorption edge and the carrier populations in InxGa1-xN are in
excellent agreement with the predictions of the amphoteric defect model
Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films
Structural and electronic properties of amorphous and single-phase
polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable
gamma phase nucleates homogeneously in the film bulk and has a high
resistivity, while the metastable kappa phase nucleates at the film surface and
has a moderate resistivity. The microstructures of hot-deposited and
post-annealed cold-deposited gamma films are quite different but the electronic
properties are similar. The increase in the resistivity of amorphous In2Se3
films upon annealing is interpreted in terms of the replacement of In-In bonds
with In-Se bonds during crystallization. Great care must be taken in the
preparation of In2Se3 films for electrical measurements as the presence of
excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure
Fabrication and Characterization of Multiband Solar Cells Based on Highly Mismatched Alloys
Multiband solar cells are one type of third generation photovoltaic devices in which an increase of the power conversion efficiency is achieved through the absorption of low energy photons while preserving a large band gap that determines the open circuit voltage. The ability to absorb photons from different parts of the solar spectrum originates from the presence of an intermediate energy band located within the band gap of the material. This intermediate band, acting as a stepping stone allows the absorption of low energy photons to transfer electrons from the valence band to the conduction band by a sequential two photons absorption process. It has been demonstrated that highly mismatched alloys offer a potential to be used as a model material system for practical realization of multiband solar cells. Dilute nitride GaAs1-xNx highly mismatched alloy with low mole fraction of N is a prototypical multiband semiconductor with a well-defined intermediate band. Currently, we are using chemical beam epitaxy to synthesize dilute nitride highly mismatched alloys. The materials are characterized by a variety of structural and optical methods to optimize their properties for multiband photovoltaic devices
Optimum nitride concentration in multiband III-N-V alloys for high efficiency ideal solar cells
III-NxâV1âx highly mismatched alloys HMAs have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise fundamental bandgap that gives them the ability of improving the efficiency by means of below-bandgap photon absorption. The efficiency of GaNxAs1âx, GaNxP1âx, and their quaternaries InyGa1âyNxAs1âx and GaNxP1âxâyAsy is estimated theoretically versus nitrogen content in this letter. Low nitrogen content in the range of 1%â3.5% in the HMAs analyzed leads to theoretical efficiencies above 60%
- âŠ