The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts

Deconstructing the lesbian, gay, bisexual, transgender victim of sex trafficking: Harm, exceptionality and religion–sexuality tensions

Contrary to widespread belief, sex trafficking also targets lesbian, gay, bisexual, transgender (LGBT) communities. Contemporary social and political constructions of victimhood lie at the heart of regulatory policies on sex trafficking. Led by the US Department of State, knowledge about LGBT victims of trafficking constitutes the newest frontier in the expansion of criminalization measures. These measures represent a crucial shift. From a burgeoning range of preemptive measures enacted to protect an amorphous class of ‘all potential victims’, now policies are heavily premised on the risk posed by traffickers to ‘victims of special interest’. These constructed identities, however, are at odds with established structures. Drawing on a range of literatures, the core task of this article is to confront some of the complexities and tensions surrounding constructions of LGBT trafficking victims. Specifically, the article argues that discourses of ‘exceptional vulnerability’ and the polarized notions of ‘innocence’ and ‘guilt’ inform hierarchies of victimhood. Based on these insights, the article argues for the need to move beyond monolithic understandings of victims, by reframing the politics of harm accordingly

Airbnb and crime in Barcelona (Spain): testing the relationship using a geographically weighted regression

The existence of works proving the possible relationship empirically that Airbnb lodgings could have with crime in Spain is not known. This research analyzes the relationship between Airbnb lodgings and crimes against the properties and people in Barcelona’s neighbourhoods. To achieve this, we use an ordinary least squares regression model and a geographically weighted regression model. The results show a significant and positive relationship between the higher density of Airbnb lodgings and the higher crime rates in the neighbourhoods, especially of patrimonial nature. Divided by type of leased space, the Airbnb homes, in which the guest shares a room with other guests, show a higher relationship with crimes against property and people. The results of the local model show a spatial heterogeneity in all variables used, indicating the need to address non-stationary spatial processes that reveal hidden patterns. However, the only variable that shows statistically significant local variability is the total Airbnb lodgings variable. Finally, we discussed some unexpected results, proposing some future lines of research. © 2020 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group, on behalf of Nanjing Normal University

The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer

Artificial drainage of peatlands: hydrological and hydrochemical process and wetland restoration

Peatlands have been subject to artificial drainage for centuries. This drainage has been in response to agricultural demand, forestry, horticultural and energy properties of peat and alleviation of flood risk. However, the are several environmental problems associated with drainage of peatlands. This paper describes the nature of these problems and examines the evidence for changes in hydrological and hydrochemical processes associated with these changes. Traditional black-box water balance approaches demonstrate little about wetland dynamics and therefore the science of catchment response to peat drainage is poorly understood. It is crucial that a more process-based approach be adopted within peatland ecosystems. The environmental problems associated with peat drainage have led, in part, to a recent reversal in attitudes to peatlands and we have seen a move towards wetland restoration. However, a detailed understanding of hydrological, hydrochemical and ecological process-interactions will be fundamental if we are to adequately restore degraded peatlands, preserve those that are still intact and understand the impacts of such management actions at the catchment scale

Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications

This letter reports on initial investigation results on the material quality and device suitability of a homo-epitaxial 3C-SiC growth process. Atomic force microscopy surface investigations revealed root-mean square surface roughness levels of 163.21 nm, which was shown to be caused by pits (35 μm width and 450 nm depth) with a density of 1.09 × 105 cm−2 which had formed during material growth. On wider scan areas, the formation of these were seen to be caused by step bunching, revealing the need for further epitaxial process improvement. X-ray diffraction showed good average crystalline qualities with a full width of half-maximum of 160 arcseconds for the 3C-SiC (002) being lower than for the 3C-on-Si material (210 arcseconds). The analysis of C–V curves then revealed similar interface-trapped charge levels for freestanding 3C-SiC, 3C-SiC on Si and 4H-SiC, with forming gas post-deposition annealed freestanding 3C-SiC devices showing DIT levels of 3.3 × 1011 cm−2 eV−1 at EC−ET = 0.2 eV. The homo-epitaxially grown 3C-SiC material's suitability for MOS applications could also be confirmed by leakage current measurements