Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes

We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40μeV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines

On the magnetic nature of electron transport barriers in tokamaks

The formation of internal transport barriers in the vicinity of rational magnetic surfaces in tokamaks with braided magnetic fields is studied for a simplified model of the perturbed magnetic field with a broad spatial spectrum and a monotonous shear profile. The island overlap criterion is used to derive a condition for barrier formation. This condition links the amplitude and the spectral width of the perturbation with the shear parameter. Numerical experiments with the MHD Monte-Carlo code E3D, where the problem of plasma heat conductivity is solved in 3D, confirm this formation of transport barriers in the case of a monotonous shear profile. Assuming that experimentally observed electron internal transport barriers are the result of local reduction of electron heat transport due to the magnetic field braiding, the amplitude and spectral width of magnetic perturbations are estimated for the tokamak RTP

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.Comment: 3 pages, 4 figure

Zero-field thermopower of a thin heterostructure membrane with a 2D electron gas

We study the low-temperature thermopower of micron sized, free-standing membranes containing a two-dimensional electron system. Suspended membranes of 320 nm thickness including a high electron mobility structure in Hall bar geometry of 34 {\mu}m length are prepared from GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Joule heating on the central region of the membrane generates a thermal gradient with respect to the suspension points where the membrane is attached to cold reservoirs. Temperature measurements on the membrane reveal strong thermal gradients due to the low thermal conductivity. We measure the zero-field thermopower and find that the phonon-drag contribution is suppressed at low temperatures up to 7 K.Comment: 5 page