Uncertainty Budget for 226 Ra Activity Concentration in Water by Alpha Spectrometry

Abstract Alpha-particle spectrometry is the most frequently used technique for the activity determination of alpha emitters, such as radium, uranium, plutonium, americium and thorium in environmental samples. In this paper an extensive uncertainty budget is presented for a typical alpha-particle spectrometry measurement of the 226 Ra activity concentration in drinking water. The most influential parameters contributing to the uncertainty are investigated. The set-up used is a common alpha-spectrometry system for environmental samples using PIPS detectors. In particular, the influence of geometrical parameters as well as the activity distribution in the measured sources on the solid angle is scrutinised

60Co in Cast Steel Matrix: a European Interlaboratory Comparison for the Characterisation of New Activity Standards for Calibration of Gamma-ray Spectrometers in Metallurgy

International audience; Two series of activity standards of Co-60 in cast steel matrix, developed for the calibration of gamma-ray spectrometry systems in the metallurgical sector, were characterised using a European interlaboratory comparison among twelve National Metrology Institutes and one international organisation. The first standard, consisting of 14 disc shaped samples, was cast from steel contaminated during production ("originally"), and the second, consisting of 15 similar discs, from artificially-contaminated ("spiked") steel. The reference activity concentrations of Co-60 in the cast steel standards were (1.077 +/- 0.019) Bq g(-1) on 1 January 2013 12h00 UT and (1.483 +/- 0.022) Bq g(-1) on 1 June 2013 12h00 UT, respectively

On the interpretation of micro-PIXE measurements on a prototype microstructured reference material

In order to determine the beam spot size and scanning properties of ion microbeam systems, a novel reference material has been developed, consisting of permalloy (81% Ni, 19% Fe) strip patterns on silicon substrate. Due to the choice of substrate and pattern materials, these samples exhibit a high elemental contrast suitable for analysis with X-ray detection and ion scattering techniques. The microlithographic production scheme is briefly described. A prototype chip of this material was investigated with PIXE and RBS analysis in a scanning nuclear microprobe. It proved to be extremely useful in the routine to focus the ion microbeam and to determine its spot size. Due to the microscopic structure of these samples, a geometric dependence of matrix effects in the production of Si X-rays from the substrate material could be shown. Even dead-time effects in the counting electronics, showing up as an apparent thickness gradient, could be observed. Besides its primary role in microbeam diagnostics, this reference material can serve an educational role in developing the analyst's ability to correctly identify and interpret such artefacts

Development Opportunities in Latvia for a Media Company JSC „Kurzemes Radio.”

We investigate Cu(In,Ga)Se2 thin films grown in multi-stage coevaporation processes and solar cells fabricated from such absorbers. Despite some interdiffusion during film growth, Ga/(Ga+In) gradients defined via evaporation-profile variations in the process are to a good part retained in the finished film. This indicates that the bandgap can be engineered in this type of process by varying the evaporation profiles, and consequently also that unintended profile variations should be noted and avoided. With front-side gradients the topmost part of many grains seems to be affected by a higher density of lattice defects due to the strong change of gallium content under copper-poor growth conditions. Electrically, both back-side gradients and moderate front-side gradients are shown to yield an improvement of device efficiency. If a front-side gradient is too wide, though, it causes strong voltage-dependent collection and the fill factor is severely reduced

Effect of gallium grading in Cu(In,Ga)Se2 solar-cell absorbers produced by multi-stage coevaporation

We investigate Cu(In,Ga)Se2 thin films grown in multi-stage coevaporation processes and solar cells fabricated from such absorbers. Despite some interdiffusion during film growth, Ga/(Ga+In) gradients defined via evaporation-profile variations in the process are to a good part retained in the finished film. This indicates that the bandgap can be engineered in this type of process by varying the evaporation profiles, and consequently also that unintended profile variations should be noted and avoided. With front-side gradients the topmost part of many grains seems to be affected by a higher density of lattice defects due to the strong change of gallium content under copper-poor growth conditions. Electrically, both back-side gradients and moderate front-side gradients are shown to yield an improvement of device efficiency. If a front-side gradient is too wide, though, it causes strong voltage-dependent collection and the fill factor is severely reduced

Development of gallium gradients in three‐ stageCu(In,Ga)Se2 co‐evaporation processes

We use secondary-ion mass spectrometry, X-ray diffraction and scanning electron microscopy to investigate the development over time of compositional gradients in Cu(In,Ga)Se2 thin films grown in three-stage co-evaporation processes and suggest a comprehensive model for the formation of the well-known ‘notch’ structure. The model takes into account the need for compensating Cu diffusion by movement of group-III ions in order to remain on the quasi-binary tie line and indicates that the mobilities of In and Ga ions differ. Cu diffuses towards the back in the second stage and towards the front in the third, and this is the driving force for the movement of In and Ga. The [Ga]/[In + Ga] ratio then increases in the direction of the respective Cu movement because In has a higher mobility at process conditions than has Ga. Interdiffusion of In and Ga can be considerable in the (In,Ga)2Se3 film of the first stage, but seems largely to cease in Cu(In,Ga)Se2 and shows no signs of being boosted by the presence of a Cu2Se layer