13 research outputs found
Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 m on InP substrates
We present a theoretical analysis and optimisation of the properties and
performance of mid-infrared semiconductor lasers based on the dilute bismide
alloy InGaAsBi, grown on conventional (001) InP
substrates. The ability to independently vary the epitaxial strain and emission
wavelength in this quaternary alloy provides significant scope for band
structure engineering. Our calculations demonstrate that structures based on
compressively strained InGaAsBi quantum wells (QWs)
can readily achieve emission wavelengths in the 3 -- 5 m range, and that
these QWs have large type-I band offsets. As such, these structures have the
potential to overcome a number of limitations commonly associated with this
application-rich but technologically challenging wavelength range. By
considering structures having (i) fixed QW thickness and variable strain, and
(ii) fixed strain and variable QW thickness, we quantify key trends in the
properties and performance as functions of the alloy composition, structural
properties, and emission wavelength, and on this basis identify routes towards
the realisation of optimised devices for practical applications. Our analysis
suggests that simple laser structures -- incorporating
InGaAsBi QWs and unstrained ternary
InGaAs barriers -- which are compatible with established
epitaxial growth, provide a route to realising InP-based mid-infrared diode
lasers.Comment: Submitted versio
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Terahertz quantum cascade laser implementing a {hacek over (C)}erenkov difference-frequency generation scheme
A terahertz source implementing a {hacek over (C)}erenkov difference-frequency generation scheme in a quantum cascade laser. The laser includes an undoped or semi-insulating InP substrate with an exit facet that is polished at an angle between 10° to 40°. The laser further includes a first waveguide cladding layer(s) in contact with an active layer (arranged as a multiple quantum well structure) and a current extraction layer on top of the substrate. Furthermore, the laser includes a second waveguide cladding layer(s) on top of the active layer, where the first and second waveguide cladding layers are disposed to form a waveguide structure by which terahertz radiation generated in the active layer is guided inside the laser. The terahertz radiation is emitted into the substrate at a {hacek over (C)}erenkov angle relative to a direction of the nonlinear polarization wave in the active layer, and once in the substrate, propagates towards the exit facet.Board of Regents, University of Texas Syste
Comprehensive analysis of electrically-pumped GaSb-based VCSELs
This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications
Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions
International audienceIn this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green's function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cmâ2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors